Epitaxial膜の評価【エピタキシャル薄膜評価】

Epitaxial膜の評価【エピタキシャル薄膜評価】

リガクや関連装置での薄膜材料の評価に関する論文リスト（タイトル）です。 2021.12.01 update
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論文リスト

Epitaxial Film characterization　【エピタキシャル薄膜評価】（薄膜論文　タイトル・リスト）

  

2021年

E-21-01 “Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3−δ films directly grown on Ge (001) without surface passivation”
L. Dai, G. Niu, J. Zhao, Y. Xue, R. Luo, B. Chen, R. An, Y. Sun, B. Feng, S. Ding, W. Luo, Z.-G. Ye, and W. Ren
Jour. Appl. Phys., vol.129, (2021) 045302-1 – 045302-7 (I-21-02/R-21-1)
E-21-02 “Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering”
H. Fiedler, J. Leveneur, D.R.G. Mitchell, S. Arulkumaran, G.I. Ng, A. Alphones, and J. Kennedy
Appl. Phys. Lett., vol.118, (2021) 012108-1 – 012108-6 (I-21-03)
E-21-03 “Strain-stabilized superconductivity”
J.P. Ruf, H. Paik, N.J. Schreiber, H. . Nair, L. Miao, J.K. Kawasaki, J.N. Nelson, B.D. Faeth, Y. Lee, B.H. Goodge, B. Pamuk, C.J. Fennie, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen
(OpenAccess)Nat. Commun., vol.12, (2021) 59-1 – 59-8 (https://www.nature.com/articles/s41467-020-20252-7)
E-21-04 “Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a‑plane GaN”
A. Kamarundzaman, A.S.A. Bakar, A. Azman, A.‑Z. Omar, N.A. Talik, A. Supangat, and W.H.A. Majid
(OpenAccess)Sci. Reports, vol.11, (2021) 9724-1 – 9724-13 (https://www.nature.com/articles/s41598-021-89201-8)
E-21-05 “Optical Plasmon Excitation in Transparent Conducting SrNbO3 and SrVO3 Thin Films”
M. Mirjolet, M. Kataja, T.K. Hakala, P. Komissinskiy, L. Alff, G. Herranz, and J. Fontcuberta
(OpenAccess)Adv. Optical Mater., (2021) 2100512-1 – 2100512-9 (R-21-2) (https://onlinelibrary.wiley.com/doi/10.1002/adom.202100520)
E-21-06 “Depolarization field tuning of nanoscale ferroelectric domains in (001)PbZr0.4Ti0.6O3/SrTiO3/PbZr0.4Ti0.6O3 epitaxial heterostructures”
V. Govinden, Q. Zhang, D. Sando, and N. Valanoor
Jour. Appl. Phys., vol. 129, (2021) 024104-1 – 024104-7
E-21-07 “Domain structure transition in compressively strained (100)/(001) epitaxial tetragonal PZT film”
D. Ichinose, T. Shimizu, O. Sakata, T. Yamada, Y. Ehara, and H. Funakubo
Jour. Appl. Phys. Lett., vol.129, (2021) 024101-1 – 024101-6 (I-21-04)
E-21-08 “Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing”
H Shin, J Lee, E. Ko, E. Kim, and D.-H. Ko
Appl. Phys. Express, vol.14, (2021) 021001-1 – 021001-6
E-21-09 “Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN”
N. Wolff, S. Fichtner, B. Haas, Md R. Islam, F. Niekiel, M. Kessel, O. Ambacher, C. Koch, B. Wagner, F. Lofink, and L. Kienle
Jour. Appl. Phys., vol.129, (2021) 034103-1 – 034103-9
E-21-10 “Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy”
P. Wang, B. Wang, D.A. Laleyan, A. Pandey, Y. Wu, Y. Sun, X. Liu, Z. Deng, E. Kioupakis, and Z. Mi
Appl. Phys. Lett., vol.118, (2021) 032102-1 – 032102-6
E-21-11 “Magnetic and electrical transport properties of Ru doped cobalt ferrite thin films with perpendicular magnetic anisotropy”
M. Peda and P.S.A. Kumar
(OpenAccess)AIP Advances, vol.11 (2021) 015346-1 – 015346-6 (https://aip.scitation.org/doi/10.1063/9.0000169)
E-21-12 “Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111)”
Y. Haku, S. Aonuki, Y. Yamashita, K. Toko, and T. Suemasu
Appl. Phys. Express, vol.14, (2021) 021003-1 – 021003-4
E-21-13 “Interface-driven magnetic anisotropy in relaxed La0.7Sr0.3CrO3/La0.7Sr0.3MnO3 heterostructures on MgO”
S. Koohfar, Y. Ozbek, H. Bland, Z. Zhang, and D.P. Kumah
Jour. Appl. Phys., vol.129, (2021) 055301-1 – 055301-6
E-21-14. “Improvement of power factor in the room temperature range of Mg2Sn1−xGex”
M.S.L. Lima, T. Aizawa, I. Ohkubo, T. Sakurai, and T. Mori
Jpn. Jour.Appl. Phys., vol.60, (2021) SBBF06-1 – SBBF06-6
E-21-15. “Epitaxial Lift-Off of Flexible GaN‑Based HEMT Arrays with Performances Optimization by the Piezotronic Effect”
X. Chen, J. Dong, C. He, L. He, Z. Chen, S. Li, K. Zhang, X. Wang, and Z.L. Wang
(OpenAccess) Nano-Micro Lett., vol.13, (2021) 67-1 – 67-13 (https://link.springer.com/article/10.1007%2Fs40820-021-00589-4)
E-21-16. “A Highly Strained Phase in PbZr0.2Ti0.8O3 Films with Enhanced Ferroelectric Properties”
C. Huang, Z. Liao, M. Li, C. Guan, F. Jin, M. Ye, X. Zeng, T. Zhang, Z. Chen, Y. Qi, P. Gao, and L. Chen
(OpenAccess) Adv. Sci., vol.8, (2021) 2003582-1 – 2003582-8 (R-21-6) (https://onlinelibrary.wiley.com/doi/10.1002/advs.202003582)
E-21-17. “Anomalous Nernst and Seebeck effects in NiCo2O4 films”
H. Koizumi, A. Hidaka, T. Komine, and H. Yanagihara
J. Magn. Soc. Jpn., vol.45, (2021) 37 – 40 (R-21-8)
E-21-18. “Hydrogenation driven structural transformation and adjustable electronic properties of epitaxial La0.3Sr0.7MnO3-d films”
D. Jin, S. Hu, H. Huang, P. Qiu, Y. Lu, X. Zeng, H. Zhou, X. Li, and C. Huang
App. Phys. Lett., vol.118, (2021) 092409-1 – 092409-5
E-21-19. “Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition”
M. Kolhep, C. Sun, J. Bläsing, B. Christian, and M Zacharias
Jour. Vac. Sci. Technol. -A, vol.39, (2021) 032401-1 – 032401-6 (I-21-08)
E-21-20. “Anomalous Hall and Nernst effects in ferrimagnetic Mn4N films: Possible interpretations and prospects for enhancement”
S. Isogami, K. Masuda, Y. Miura, N. Rajamanickam, and Y. Sakuraba
Appl. Phys. Lett., vol.118, (2021) 092407-1 – 092407-6 (I-21-09)
E-21-21. “Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls”
E. Österlund, H. Seppänen, K. Bespalova, V. Miikkulainen, and M. Paulasto-Kröckel
Jour. Vac. Sci. Technol. -A, vol.39, (2021) 032403-1 – 032403-12 (I-21-10)
E-21-22. “Low temperature growth of epitaxial ferroelectric BaTiO3”
Y.J. Shin, J. Jiang, Y. Jia, F.J. Walker, and C.H. Ahn
(OpenAccess) APL Mater., vol.9, (2021) 041104-1 – 041104-6 (https://aip.scitation.org/doi/10.1063/5.0046624)
E-21-23. “A hybrid optoelectronic Mott insulator”
H. Navarro, J. del Valle, Y. Kalcheim, N.M. Vargas, C. Adda, M.-H. Lee, P. Lapa, A. Rivera-Calzada, I.A. Zaluzhnyy, E. Qiu, O. Shpyrko, M. Rozenberg, A. Frano, and I.K. Schuller
Appl. Phys. Lett., vol.118, (2021) 141901-1 – 141901-5 (R-21-11)
E-21-24. “Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy”
A. Baki, J. Stöver, T. Schulz, T. Markurt, H. Amari, C. Richter, J. Martin, K. Irmscher, M. Albrecht,and J. Schwarzkopf
(OpenAccess) Sci. Reports, vol.11, (2021) 7497-1 – 7497-11 (https://www.nature.com/articles/s41598-021-87007-2)
E-21-25. “THz intersubband absorption in n-type Si1−xGex parabolic quantum wells”
M. Montanari, C. Ciano, L. Persichetti, C. Corley, L. Baldassarre, M. Ortolani, L. Di Gaspare, G. Capellini, D. Stark, G. Scalari, M. Virgilio, and M. De Seta
Appl. Phys. Lett., vol.118, (2021) 163106-1 – 163106-5
E-21-26. “Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer”
M. Meng, Y. Sun, Y. Li, Q. An, Z. Wang, Z. Lin, F. Yang, X. Zhu, P. Gao, and J. Guo
(OpenAccess) Nat. Commun, vol.12, (2021) 2447-1 – 2447-8 (https://www.nature.com/articles/s41467-021-22790-0)
E-21-27. “Strain-controlled oxygen content and the cationic electronegativity in LaBaCo2O5.5+δ thin films”
X.M. Xu, L. Shi, S.Y. Pan, J.Y. Zhao, and R.X. Tong
Jour. Appl. Phys., vol.129, (2021) 175301-1 – 175301-8
E-21-28. “Achieving a high dielectric tunability in strain-engineered tetragonal K0.5Na0.5NbO3 films”
L. Hao, Y. Yang, Y. Huan, H. Cheng, Y.-Y. Zhao, Y. Wang, J. Yan, W. Ren, and J. Ouyang
(OpenAccess) NPJ. Comput. Mater., vol.7, (2021) 62-1 – 62-9 (https://www.nature.com/articles/s41524-021-00528-2)
E-21-29. “Stability and residual stresses of sputtered wurtzite AlScN thin films”
E. Österlund, G. Ross, M.A. Caro, M. Paulasto-Kröckel, A. Hollmann, M. Klaus, M. Meixner, C. Genzel, P. Koppinen, T. Pensala, A. Žukauskaitė, and M. Trebala
Phys. Rev. Mater., vol.5, (2021) 035001-1 – 035001-14 (I-21-14)
E-21-30. “Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition”
I.-H. Hwang, M.-J. Kang, H.-Y. Cha, and K.-S. Seo
(OpenAccess) Crystals, vol.11, (2021) 405-1 – 405-11 (R-21-17) (https://www.mdpi.com/2073-4352/11/4/405)
E-21-31. “Emergent Magnetic Phenomenon with Unconventional Structure in Epitaxial Manganate Thin Films”
M. Yang, K. Jin, H. Yao, Q. Zhang, Y. Ji, L. Gu, W. Ren, J. Zhao, J. Wang, E.-J. Guo, C. Ge, C. Wang, X. Xu, Q. Wu, and G. Yang
(OpenAccess) Adv. Sci., (2021) 2100177-1 – 2100177-7 (https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202100177)
E-21-32. “Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition”
M. Kolhep, C. Sun, J. Bläsing, B. Christian, and M. Zacharias
Jour. Vac. Sci. Technol. –A, vol.39, (2021) 032401-1 – 032401-6 (I-21-15)
E-21-33. “Two-dimensional electron systems and interfacial coupling in LaCrO3/KTaO3 heterostructures”
A.H. Al-Tawhid, D.P. Kumah, and K. Ahadi
Appl. Phys. Lett., vol.118, (2021) 192905-1 – 192905-4
E-21-34. “Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC”
E. Do, M. Kaneko, and T. Kimoto
Jpn. Jour. Appl. Phys., vol.60, (2021) 068001-1 – 068001-4
E-21-35. “Strain-controlled oxygen content and the cationic electronegativity in LaBaCo2O5.5+δ thin films”
X.M. Xu, L. Shi, S.Y. Pan, J.Y. Zhao, and R.X. Tong
Jour. Appl. Phys., vol.129, (2021) 175301-1 – 175301-8
E-21-36. “MoO3 films grown on stepped sapphire (0001) by molecular beam epitaxy”
P. Novotný, and H.H. Lamb
Jour. Vac. Sci. Technol. –A, vol.39, (2021) 043406-1 – 043406-11
E-21-37. “Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN”
A. Hiraiwa, K. Horikawa, and H. Kawarada
Jour. Appl. Phys., vol.129, (2021) 195303-1 – 195303-12
E-21-38. “Solid-phase epitaxial crystallization of b-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)- buffered α-Al2O3 (0001) substrate at room temperature”
H. Morita, T. Matsushima, K. Nakamura, K. Kaneko, S. Kaneko, A. Matsuda, and M. Yoshimoto
Jour. Vac. Sci. Technol. –A, vol.39, (2021) 043414-1 – 043414-5
E-21-39. “Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010)”
H. Okumura
Jpn. Jour. Appl. Phys., vol.60, (2021) 065504-1 – 065504-5
E-21-40. “Engineering the spin conversion in graphene monolayer epitaxial structures”
A. Anadón, A. Gudín, R. Guerrero, I. Arnay, A. Guedeja-Marron, P. Jiménez-Cavero, J.M.D. Toledano, F. Ajejas, M. Varela, S. Petit-Watelot, I. Lucas, L. Morellón, P.A. Algarabel, M.R. Ibarra, R. Miranda, J. Camarero, J.C. Rojas-Sánchez, and P. Perna
(OpenAccess) APL. Mater., vol.9, (2021) 061113-1 – 061113-6 (https://aip.scitation.org/doi/10.1063/5.0048612)
E-21-41. “Hybrid molecular beam epitaxy growth of BaTiO3 films”
W. Nunn, S. Sandlass, M. Wegner, R. Haislmaier, A. Kumar, M. Tangi, J. LeBeau, E. Quandt, R.D. James, and B. Jalan
Jour. Vac. Sci. Technol. –A, vol.39, (2021) 040404-1 – 040404-6
E-21-42. “Surface-supporting method of micropad deposition onto LiCoO2 epitaxial thin films to improve high Crate performance”
S. Yasuhara, S. Yasui, T. Teranishi, T. Hoshina, T. Tsurumi, and M. Itoh
Jour. Ceram. Soc. Jpn., vol.129, (2021) 415 – 418
E-21-43. “単結晶薄膜の自立化プロセスの開発”
高橋 竜太・リップマー ミック
セラミックス, vol.56, (2021) 451 – 454
E-21-44. “An antisite defect mechanism for room temperature ferroelectricity in orthoferrites”
S. Ning, A. Kumar, K. Klyukin, E. Cho, J.H. Kim, T. Su, H.-S. Kim, J.M. LeBeau, B. Yildiz, and C.A. Ross
(OpenAccess) Nat. Commun., vol.12, (2021) 4298-1 – 4298-7 (R-21-24) (https://www.nature.com/articles/s41467-021-24592-w)
E-21-45. “Impact of film thickness on the external quantum efficiency of bulk photovoltaic effects in Mn-doped BiFeO3 thin films”
S. Nakashima, R. Kato, and H. Fujisawa
Jpn. Jour. Appl. Phys., vol.60, (2021) SFFB02-1 – SFFB02-6
E-21-46. “Sub-μm features patterned with laser interference lithography for the epitaxial lateral overgrowth of a-Ga2O3 via mist chemical vapor deposition”
G.T. Dang, T. Yasuoka, and T. Kawaharamura
Appl. Phys. Lett., vol.119, (2021) 041902-1 – 041902-6
E-21-47. “Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures”
P. Pramanik, S. Sen, C. Singha, A. Bhattacharyya, L. Zhou, and D.J. Smith
(OpenAccess) AIP Advances, vol.11, (2021) 085109-1 – 085109-5 (https://aip.scitation.org/doi/10.1063/5.0059744)
E-21-48. “A surface-supporting method for an anode material of Li4Ti5O12 via an epitaxial thin film approach”
S. Yasuhara, S. Yasui, T. Teranishi, T. Hoshina, T. Tsurumi, and M. Itoh
Jpn. Jour. Appl. Phys., vol.60, (2021) SFFB11-1 – SFFB11-4
E-21-49. “Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties”
P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez
Jour. Appl. Phys., vol.130, (2021) 065104-1 – 065104-11
E-21-50. “Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications”
N. Remesh, H. Chandrasekar, A. Venugopalrao, S. Raghavan, M. Rangarajan, and D.N. Nath
Jour. Appl. Phys., vol.130, (2021) 075702-1 – 075702-10
E-21-51. “Non-destructive characterization of crystallographic defects of SiC substrates using X-ray topography for R&D and quality assurance in production”
C. Reiman, and C. Kranert
Rigaku Journal, vol.37(2), (2021) 33 – 37
E-21-52. “N-polar ScAlN and HEMTs grown by molecular beam epitaxy”
P. Wang, D. Wang, B. Wang, S. Mohanty, S. Diez, Y. Wu, Y Sun, E. Ahmadi, and Z. Mia
Appl. Phys. Lett., vol.119, (2021) 082101-1 – 082101-5
E-21-53. “Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy”
D. Wang, P. Wang, B. Wang, and Z. Mia
Appl. Phys. Lett., vol.119, (2021) 111902-1 – 111902-5
E-21-54. “Effect of Oxygen Partial Pressure on Crystal Structure, Oxygen Vacancy, and Surface Morphology of Epitaxial SrTiO3 Thin Films Grown by Ion Beam Sputter Deposition”
G. Panomsuwan, and N. Saito
(OpenAccess) Oxygen, vol.1, (2021) 62 – 72 (I-21-20) (https://www.mdpi.com/2673-9801/1/1/7)
E-21-55. “Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers”
T. Izawa, H. Okano, S. Morita, and N. Ohtani
Jour. Appl. Phys., vol.130, (2021) 095712-1 – 095702-7
E-21-56. “Stabilization of correlated ferroelectric and ferromagnetic domain structures in BiFe0.9Co0.1O3 films”
M. Katsumata, K. Shigematsu, T. Itoh, H. Shimizu, K. Shimizu, and M. Azuma
Appl. Phys. Lett., vol.119, (2021) 1329012-1 – 132901-6
E-21-57. “Electrodeposition of Cu(111) onto a Ru(0001) seed layer for epitaxial Cu interconnects”
R.R. Gusley, Q. Cumston, K.R. Coffey, A.C. West, and K. Barmak
Jour. Appl. Phys., vol.130, (2021) 135301-1 – 135301-13
E-21-58. “Texture of NiGe(Sn) on Ge(100) and its evolution with Sn content”
A. Quintero, P. Gergaud, T. Nguyen-Thanh, J.-M Hartmann, V. Reboud, E. Cassan, and P. Rodrigueza
Jour. Appl. Cryst., vol.54, (2021) 1306 – 1316 (I-21-22)
E-21-59. “Efficient current-driven magnetization switching owing to isotropic magnetism in a highly symmetric 111-oriented Mn4N epitaxial single layer”
S. Isogami, N. Rajamanickam, Y. Kozuka, and Y.K. Takahashi
(OpenAccess) AIP Advances, vol.11, (2021) 105314-1 – 105314-6 (https://aip.scitation.org/doi/10.1063/5.0062253)
E-21-60. “Semi-Automatic Deposition of Oriented Cu(OH)2 Nanobelts for the Heteroepitaxial Growth of Metal–Organic Framework Films”
M. Linares-Moreau, L.A. Brandner, T. Kamencek, S. Klokic, F. Carraro, K. Okada, M. Takahashi, E. Zojer, C.J. Doonan, and P. Falcaro
(OpenAccess) Adv. Mater. Interfaces, (2021) 202101039-1 – 202101039-9 (I-21-23) (https://onlinelibrary.wiley.com/doi/10.1002/admi.202101039)
E-21-61. “Postdeposition annealing effect on atomiclayer-deposited Al2O3 gate insulator on (001) b-Ga2O3”
A. Hiraiwa, K. Horikawa, H. Kawarada, M. Kado, and K. Danno
Jour. Vac. Sci. Technol. –B, vol.39, (2021) 062205-1 – 062205-13
E-21-62. “X 線トポグラフィーによるSiC 単結晶基板中の結晶欠陥の非破壊観察 －研究開発から生産工程まで－”
C. Reiman, and C. Kranert
リガクジャーナル, vol.52(2), (2021) 26 – 31
E-21-63. “Real-space characterization of tetragonal CuO epitaxial films”
Y. Zhong, Z. Dou, R.-F. Wang, Y.-F. Lv, S. Han, H. Yan, C.-L. Song, X.-C. Ma, and Q.-K. Xue
Appl. Phys. Lett., vol.119, (2021) 172602-1 – 172602-5
E-21-64. “Engineering of Fe-pnictide heterointerfaces by electrostatic principles”
S. Haindl, S. Nikolaev, M. Sato, M. Sasase, and I. MacLaren
(OpenAccess) NPG Asia Mater., vol.13, (2021) 67-1 – 67-10 (R-21-29) (https://www.nature.com/articles/s41427-021-00336-6)
E-21-65. “Super-Flexible Freestanding BiMnO3 Membranes with Stable Ferroelectricity and Ferromagnetism”
C. Jin, Y. Zhu, X. Li, F. An, W. Han, Q. Liu, S. Hu, Y. Ji, Z. Xu, S. Hu, M. Ye, G. Zhong, M. Gu, and L. Chen
(OpenAccess) Adv. Sci., (2021) 2102178-1 – 2102178-9 (https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202102178)
E-21-66. “Ferroelectric and magnetic properties in ε-Fe2O3 epitaxial film”
Y. Hamasaki, S. Yasui, T. Katayama, T. Kiguchi, S. Sawai, and M. Itoh
Appl. Phys. Lett., vol.119, (2021) 182904-1 – 182904-6
E-21-67. “The Atomic Rearrangement of GaN‑Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties”
Y. Ben, F. Liang, D. Zhao, J. Yang, Z. Liu, and P. Chen
(OpenAccess) Nanoscale Res. Lett., vol.16, (2021) 161-1 – 161-8 (https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-021-03618-8)
E-21-68. “Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures”
E.N. Jin, B.P. Downey, V.J. Gokhale, J.A. Roussos, M.T. Hardy, T.A. Growden, N. Nepal, D.S. Katzer, J.P. Calame, and D.J. Meyer
(OpenAccess) APL Mater., vol.9, (2021) 111101-1 – 111101-9 (R-21-30) (https://aip.scitation.org/doi/10.1063/5.0063295)
E-21-69. “Tunable magnetic skyrmions in ferrimagnetic Mn4N”
C.T. Ma, T.Q. Hartnett, W. Zhou, P.V. Balachandran, and S.J. Poon
Appl. Phys. Lett., vol.119, (2021) 192406-1 – 192406-7

2020年

E-20-01.. “Influence of unintentionally incorporated Ar atoms on the crystalline polarity of magnetron-sputtered Aldoped ZnO polycrystalline films on glass and sapphire substrates”
J. Nomoto, T. Nakajima, I. Yamaguchi, and T. Tsuchiya
Jour. Vac. Sci. Technol. -B, vol.38, (2020) 022202-1 – 022202-8 (I-20-01)
E-20-02.. “Improvement of tin oxide single crystal on an m-plane sapphire substrate by mist chemical vapor deposition”
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E-20-72. “Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission”
P. Ruterana, M. Morales, N. Chery, T.H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano, and B. Gil
Jour. Appl. Phys., vol.128, (2020) 223102-1 – 223102-11
E-20-73. “Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry”
A.L. Mock, A.G. Jacobs, E.N. Jin, M.T. Hardy, and M.J. Tadjer
Appl. Phys. Lett., vol.117, (2020) 232107-1 – 232107-6
E-20-74. “Metallic ground states of undoped Ti2O3 films induced by elongated c‑axis lattice constant”
K. Yoshimatsu, N. Hasegawa, Y. Nambu, Y. Ishii, Y. Wakabayashi, and H. Kumigashira
(OpenAccess) Sci. Reports, vol.10, (2020) 22109-1 – 22109-9(https://www.nature.com/articles/s41598-020-79182-5)
E-20-75. “Exchange bias in flexible freestanding La0.7Sr0.3MnO3/BiFeO3 membranes”
C. Jin, Y. Zhu, W. Han, Q. Liu, S. Hu, Y. Ji, Z. Xu, S. Hu, M.
Appl. Phys. Lett., vol.117, (2020) 252902-1 – 252902-6

2019年

E-19-01 “Three-phase metal-insulator transition and structural alternative for a VO2 film epitaxially grown on Al2O3 (0001)”
A. Bailly, S. Grenier, M.M. Vallamayor, M. Gaudin, A.Y. Ramos, P. Bouvier, C. Bouchard, L. Magaud, L. Laversenne, B. Mongallaz, E. Bellet-Amalric, A. Lacoste, and A. Bès
Jour. Appl. Phys., vol.126, (2019) 165306-1 – 165306-11 (I-19-02)
E-19-02 “Thickness effects on the epitaxial strain states and phase transformations in (001)-VO2/TiO2 thin films”
Y. Yang, X. Mao, Y. Yao, H. Huang, Y. Lu, L. Luo, X. Zhang, G. Yin, T. Yang, and X. Gao
Jour. Appl. Phys., vol.125, (2019) 082508-1 – 082508-8
E-19-03 “X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers”
M. Meduňa, T. Kreiliger, M. Mauceri, M. Puglisi, F. Mancarella, F. La Via, D. Crippa, L. Miglio, and H. von Känelc
Jour. Cryst. Growth, vol.507, (2019) 70 – 76
E-19-04 “Large negative uniaxial magnetic anisotropy in highly distorted Co-ferrite thin films”
T. Tainosho, J. Inoue, S. Sharmin, M. Takeguchi, E. Kita, and H. Yanagihara
Appl. Phys. Lett., vol.114, (2019) 092408-1 – 092408-5 (R-19-01, I-19-06)
E-19-05 “Chlorine evolution reaction electrocatalysis on RuO2(110) and IrO2(110) grown using molecular-beam epitaxy”
D.-Y. Kuo, H. Paik, J.N. Nelson, K.M. Shen, D.G. Schlom, and J. Suntivich
J. Chem. Phys., vol.150, (2019) 041726-1 – 041726-6
E-19-06 “Electrical and optical properties of scandium nitride nanolayers on MgO (100) substrate”
J. More-Chevalier, S. Cichoň, J. Bulíř, M.e Poupon, P. Hubík, L. Fekete, and J. Lančok
(OpenAccess) AIP Advances, vol.9, (2019) 015317-1 – 015317-7 (https://aip.scitation.org/doi/10.1063/1.5056245)
E-19-07 “Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition”
P.J. King, M. Vehkamäki, M. Mattinen, M.J. Heikkilä, K. Mizohata, W. Noh, M. Leskelä, and M. Ritala
Jour. Vac. Sci. Technol., -A vol.37, (2019) 020602-1 – 020602-4
E-19-08 “Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars”
J. Lähnemann, D.A Browne, A1 Ajay, M. Jeannin, A. Vasanelli, J.-L. Thomassin, E. Bellet-Amalric, and E. Monroy
Nanotechnology, vol.30, (2019) 054002-1 – 054002-8
E-19-09 “Unusual perpendicular anisotropy in Co2TiSi films”
Y. Jin, S. Valloppilly, P. Kharel, R. Pathak, A. Kashyap, R. Skomski, and D.J. Sellmyer
J. Phys. D: Appl. Phys., vol.52, (2019) 035001-1 – 035001-8
E-19-10 “Magnetotransport Anomaly in Room-Temperature Ferrimagnetic NiCo2O4 Thin Films”
X. Chen, X. Zhang, M.-G. Han, L. Zhang, Y. Zhu, X. Xu, and X. Hong
(OpenAccess) Adv. Mater., vol.31, (2019) 1805260-1 – 1805260-8 (https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201805260)
E-19-11 “D Analysis of anisotropic in-plane strain behavior in condensed Si1−xGex fin epitaxial layer using X-ray reciprocal space mapping”
H. Jang, B. Kim, S. Koo, Y. Choi, C.-S. Shin, and D.-H. Ko
Jpn. Jour. Appl. Phys., vol.58, (2019) 036502-1 – 036502-8
E-19-12 “Structural properties of strained epitaxial La1+δCrO3 thin films”
D. Han, M. Bouras, C. Botella, A. Benamrouche, B. Canut, G. Grenet, G. Saint-Girons, and R. Bachelet
Jour. Vac. Sci. Technol., -A vol.37, (2019) 021512-1 – 021512-6 (R-19-09)
E-19-13 “Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on lowcost metal tapes for flexible silicon devices”
Y. Li , Y. Gao, Y. Yao, S. Sun, D. Khatiwada, S. Pouladi, E. Galstyan, M. Rathi, P. Dutta, A.P. Litvinchuk, J.-H. Ryou, and V. Selvamanickam
Appl. Phys. Lett., vol.114, (2019) 083502-1 – 083502-4
E-19-14 “Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates”
A. Petraru, R. Droopad, and H. Kohlstedt
Jour. Vac. Sci. Technol., -A vol.37, (2019) 021514-1 – 021514-6
E-19-15 “Epitaxial ultrathin Au films on transparent mica with oxide wetting layer applied to organic light-emitting devices”
J. Xie, Y. Bi, M. Ye, Z. Rao, L. Shu, P. Lin, X. Zeng, and S. Ke
Appl. Phys. Lett., vol.114, (2019) 081902-1 – 081902-5
E-19-16 “Phase transitions in few-monolayer spin ice films”
L. Bovo, C.M. Rouleau, D. Prabhakaran, and S.T. Bramwell
(OpenAccess) Nat. Commun., vol.10, (2019) 1219-1 – 1219-8 (R-19-10) (https://www.nature.com/articles/s41467-019-09187-w)
E-19-17 “Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy”
Y. Yamashita, Y. Takahara, T. Sato, K. Toko, A. Uedono, and T. Suemasu
Appl. Phys. Express, vol.12, (2019) 055506-1 – 055506-4
E-19-18 “Thermal transport of nanoporous gallium nitride for photonic applications”
T. Zhou, C. Zhang, R. ElAfandy, G. Yuan, Z. Deng, K. Xiong, F.-M. Chen, Y.-K. Kuo, K. Xu, and J. Han
Jour. Appl. Phys., vol.125, (2019) 155106-1 – 155106-8
E-19-19 “Real-space observation of charge ordering in epitaxial La2−xSrxCuO4 films”
Y. Wang, Y. Zhong, Z. Luo, M. Liao, R. Wang, Z. Dou, Q. Zhang, D. Zhang, L. Gu, C.-L. Song, X.-C. Ma, and Q.-K. Xue
(OpenAccess) NPJ Quant. Mat., vol.4, (2019) 15-1 – 15-6 (https://www.nature.com/articles/s41535-019-0156-1)
E-19-20 “Short range biaxial strain relief mechanism within epitaxially grown BiFeO3”
I.-T. Bae, S. Yasui, T. Ichinose, M. Itoh, T. Shiraishi, T. Kiguchi, and H. Naganuma
(OpenAccess) Sci. Reports, vol.9, (2019) 6715-1 – 6715-10 (https://www.nature.com/articles/s41598-019-42998-x)
E-19-21 “RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC”
D.S. Katzer, N. Nepal, M.T. Hardy, B.P. Downey, D.F. Storm, E.N. Jin, and D.J. Meyer
Jour. Vac. Sci. Technol., -B vol.37, (2019) 031211-1 – 031211-5
E-19-22 “Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature”
P.M. Mensz, B. Dror, A. Ajay, C. Bougerol, E. Monroy, M. Orenstein, and G. Bahir
Jour. Appl. Phys., vol.125, (2019) 174505-1 – 174505-9
E-19-23 “Terahertz pulse emission from GaInAsBi”
V. Pačebutas, S. Stanionytė, R. Norkus, A. Bičiūnas, A. Urbanowicz, and A. Krotkus
Jour. Appl. Phys., vol.125, (2019) 174507-1 – 174507-5
E-19-24 “Strain-effected physical properties of ferromagnetic insulating La0.88Sr0.12MnO3 thin films”
Y. Kim, S. Ryu, and H. Jeen
(OpenAccess) RSC Adv., vol.9, (2019) 2645-1 – 2645-5 (R-19-12) (https://pubs.rsc.org/en/content/articlelanding/2019/RA/C8RA09851D#!divAbstract)
E-19-25 “Effect of thickness on metal to semiconductor transition in La doped BaSnO3 films deposited on high mismatch LSAT substrates”
A. Kumar, S. Maurya, S. Chawla, S. Patwardhan, and B. Kavaipatti
Appl. Phys. Lett., vol.114, (2019) 212103-1 – 212103-5 (R-19-21)
E-19-26 “Atomically interface engineered micrometer-thick SrMoO3 oxide electrodes for thin-film BaxSr1-xTiO3 ferroelectric varactors tunable at low voltages”
P. Salg, D. Walk, L. Zeinar, A. Radetinac, L. Molina-Luna, A. Zintler, R. Jakoby, H. Maune, P. Komissinskiy, and L. Alff
(OpenAccess) APL Mater., vol.7, (2019) 051107-1 – 051107-7 (https://aip.scitation.org/doi/10.1063/1.5094855)
E-19-27 “Investigation of native defects in BaSi2 epitaxial films by electron paramagnetic resonance”
T. Sato, C. Lombard, Y. Yamashita, Z. Xu, L. Benincasa, K. Toko, S. Gambarelli, and T. Suemasu
Appl. Phys. Express, vol.12, (2019) 061005-1 – 061005-4
E-19-28 “Sr-diffusion-induced inhibition of (100)-oriented growth Ca1−xSrxVO3 thin film on a LaAlO3 substrate in pulsed laser deposition”
M. Takayanagi, T. Tsuchiya, W. Namiki, Y. Kitagawa, D. Etoh, D. Nishioka, T. Higuchi, and K. Terabe
Jpn. Jour. Appl. Phys., vol.58, (2019) SDGG08-1 – SDGG08-5
E-19-29 “High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors”
M. Sakata, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
Jpn. Jour. Appl. Phys., vol.58, (2019) SCCC22-1 – SCCC22-5
E-19-30 “Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensation”
T. Komori, T. Gushi, A. Anzai, L. Vila, J.-P. Attané, S. Pizzini, J. Vogel, S. Isogami, K. Toko, and T. Suemasu
Jour. Appl. Phys., vol.125, (2019) 213902-1 – 213902-8 (I-19-08)
E-19-31 “Shape-fitting analyses of two-dimensional X-ray diffraction spots for strain-distribution evaluation in a b-FeSi2 nanofilm”
S. Takemoto, K. Hattori, M. Someta, A.N. Hattori, H. Tanaka, K. Kurushima, Y. Otsuka and H. Daimon
Jour. Appl. Cryst., vol.52, (2019) 732 – 744 (I-19-10)
E-19-32 “Accurate determination of strains at layered materials by selected area electron diffraction mapping”
R. Bekarevich, K. Mitsuishi, T. Ohnishi, T. Mano, F. Uesugi, and M. Takeguchi
Jpn. Jour. Appl. Phys., vol.58, (2019) SIIA03-1 – SIIA03-6
E-19-33 “Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon”
S. Narita, Y. Nara, Y. Enta, and H. Nakazawa
Jpn. Jour. Appl. Phys., vol.58, (2019) SIIA16-1 – SIIA16-8
E-19-34 “Ferroelectric and ferrimagnetic properties of e-RhxFe2-xO3 thin films”
S. Yasui, T. Katayama, T. Osakabe, Y. Hamasaki, T. Taniyama, and M. Itoh
Jour. Cerum. Soc. Japan, vol.127, (2019) 474 – 477
E-19-35 “Effect of nitrogen partial pressure on the microstructure of epitaxial GaN films grown by rf magnetron sputtering”
M. Monish, S. Mohan, and S.S. Major
AIP Conf. Proc., vol.127, (2019) 030316-1 – 030316-4
E-19-36 “Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes”
Z. Cao, T.D. Veal, M.J. Ashwin, K. Dawson, and I. Sandall
Jour. Appl. Phys., vol.126, (2019) 053103-1 – 053103-4
E-19-37 “Large-area borophene sheets on sacrificial Cu(111) films promoted by recrystallization from subsurface boron”
R.Wu, A. Gazar, and I. Božović
(OpenAccess) NPJ Quant. Mat., vol.4, (2019) 40-1 – 40-5 (https://www.nature.com/articles/s41535-019-0181-0)
E-19-38 “Quantum Engineering of Atomically Smooth Single-Crystalline Silver Films”
I.A. Rodionov, A.S. Baburin, A.R. Gabidullin, S.S. Maklakov, S. Peters, I.A. Ryzhikov, and A.V. Andriyash
(OpenAccess) Sci. Reports, vol.9, (2019) 12232-1 – 12232-9 (https://www.nature.com/articles/s41598-019-48508-3)
E-19-39 “Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices”
S. Petzold, A. Zintler, R. Eilhardt, E. Piros, N. Kaiser, S.U. Sharath, T. Vogel, M. Major, K.P. McKenna, L. Molina-Luna, and L. Alff
(OpenAccess) Adv. Electron. Mater., vol.5, (2019) 1900484-1 – 1900484-9 (R-19-28) (https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201900484)
E-19-40 “Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys”
J. Occena, T. Jen, J.W. Mitchell, W.M. Linhart, E.-M. Pavelescu, R. Kudrawiec, Y.Q. Wang, and R. S. Goldman
Appl. Phys. Lett., vol.115, (2019) 082106-1 – 082106-5
E-19-41 “Fabrication and physical properties of bismuth layer-structured ferroelectric thin films with c-axis orientation epitaxially grown by high-temperature sputtering”
T. Migita, M. Kobune, R. Ito, T. Obayashi, T. Kikuchi, H. Fujisawa, and S. Nakashima
Jpn. Jour. Appl. Phys., vol.58, (2019) SLLB09-1 – SLLB09-5
E-19-42 “Poisson ratio and bulk lattice constant of (Sr0.25La0.75)CrO3 from strained epitaxial thin films”
D. Han, M. Bouras, C. Botella, A. Benamrouche, B. Canut, G. Grenet, G. Saint-Girons, and R. Bachelet
Jour. Appl. Phys., vol.126, (2019) 085304-1 – 085304-7 (R-19-31)
E-19-43 “Epitaxial growth of (Bi,K)TiO3-Bi(Mg,Ti)O3 (001) films and their ferroelectric and piezoelectric properties”
J. Morishita, H. Kazama, Y. Sato, and H. Funakubo
Jpn. Jour. Appl. Phys., vol.58, (2019) SLLB13-1 – SLLB13-5
E-19-44 “Ambipolar transistor action of germanane electric double layer transistor”
Y. Katayama, R. Yamaguchi, Y. Yasutake, S. Fukatsu, and K. Ueno
Appl. Phys. Lett., vol.115, (2019) 122101-1 – 122101-5
E-19-45 “Highly Reduced Saturation Magnetization in Epitaxially Grown Ferrimagnetic Heusler Thin Films”
C. Kim, W. Yoo, H.-W. Bang, S. Lee, Y.C. Park, Y.H. Lee, J. Choi, Y. Jo, K. Lee, and M.-H. Jung
(OpenAccess) ACS Omega, vol.4, (2019) 16578 – 16584 (https://pubs.acs.org/doi/10.1021/acsomega.9b0236h9)
E-19-46 “Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers”
A.S. Sharma, S. Das, S.A. Gazi, and S. Dhar
Jour. Appl. Phys., vol.126, (2019) 155702-1 – 155702-6
E-19-47 “Correlation of native defects between epitaxial films and polycrystalline BaSi2 bulks based on photoluminescence spectra”
T. Sato, Y. Yamashita, Z. Xu, K. Toko, S. Gambarelli, M. Imai, and T. Suemasu
Apple. Phys. Express, vol.12, (2019) 111001-1 – 111001-4
E-19-48 “Mechanically controlled reversible photoluminescence response in all-inorganic flexible transparent ferroelectric/mica heterostructures”
M. Zheng, H. Sun, and K.W. Kwok
(OpenAccess) NPG Asia Mater., vol.11, (2019) 52-1 – 52-8 (R-19-34) (https://www.nature.com/articles/s41427-019-0153-7)
E-19-49 “Three port logic gate using forward volume spin wave interference in a thin yttrium iron garnet film”
T. Goto, T. Yoshimoto, B. Iwamoto, K. Shimada, C.A. Ross, K. Sekiguchi, A.B. Granovsky, Y. Nakamura, H. Uchida, and M. Inoue
(OpenAccess) Sci. Reports, vol.9, (2019) 16472-1 – 16472-11 (R-19-35) (https://www.nature.com/articles/s41598-019-52889-w)
E-19-50 “The effects of BaTiO3 nanodots density support on epitaxial LiCoO2 thin-film for high-speed rechargeability”
S. Yasuhara, S. Yasui, T. Teranishi, Y. Yoshikawa, T. Taniyama, and M. Itoh
(OpenAccess) Electrochem. Commun., vol.109, (2019) 106604-1 – 106604-4 (https://www.sciencedirect.com/science/article/pii/S138824811930267X?via%3Dihub)
E-19-51 “Evaluation of exciton diffusion length in highly oriented fullerene films of fullerene/p-Si(100) hybrid solar cells”
N. Ohashi, T. Miyadera, T. Tajima, and Y. Yoshida
Jpn. Jour. Appl. Phys., vol.58, (2019) 121004-1 – 121004-5 (I-19-16)
E-19-52 “Fabrication of Mg2Sn(111) film by molecular beam epitaxy”
T. Aizawa, I. Ohkubo, M.S.L. Lima, T. Sakurai, and T. Mori
Jour. Vac. Sci. Technol., -A vol.37, (2019) 061513-1 – 061513-5
E-19-53 “The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering”
D. Solonenko, C. Schmidt, C. Stoeckel, K. Hiller, and D.R. Zahn
(OpenAccess) Phys. Stat. Sol. –(b), vol.214, (2019) 1900400-1 – 1900400-9 (https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201900400)
E-19-54 “Synthesis and characterisation of fluorinated epitaxial films of BaFeO2F: tailoring magnetic anisotropy via a lowering of tetragonal distortion”
A. Nair, S. Wollstadt, R. Witte, S. Dasgupta, P. Kehne, L. Alff, P. Komissinskiy, and O. Clemens
(OpenAccess) RSC Adv., vol.9, (2019) 37136-1 – 37136-8 (https://pubs.rsc.org/en/content/articlelanding/2019/RA/C9RA08039B#!divAbstract)
E-19-55 “Three-step growth of highly photoresponsive BaSi2 light absorbing layers with uniform Ba to Si atomic ratios”
Y. Yamashita, T. Sato, N. Saitoh, N. Yoshizawa, K. Toko, and T. Suemasu
Jour. Appl. Phys., vol.126, (2019) 215301-1 – 215301-7
E-19-56 “Contrasted Sn substitution effects on Dirac line node semimetals SrIrO3 and CaIrO3”
M. Negishi, N. Hiraoka, D. Hishio-Hamane, and H. Takagi
(OpenAccess) APL Mater., vol.7, (2019) 121101-1 – 121101-6 (https://aip.scitation.org/doi/10.1063/1.5129235)
E-19-57 “Atomically-smooth single-crystalline VO2 (101) thin films with sharp metal-insulator transition”
D. Mondal, S.R. Mahapatra, T. Ahmed, S.K. Podapangi, A. Ghosh, and N.P.B. Aetukuri
Jour. Appl. Phys., vol.126, (2019) 215302-1 – 215302-5
E-19-58 “The valley Nernst effect in WSe2”
M.T. Dau, C. Vergnaud, A. Marty, C. Beigné, S. Gambarelli, V. Maurel, T. Journot, B. Hyot, T. Guillet, B. Grévin, H. Okuno, and M. Jamet
(OpenAccess) Nat. Commun., vol.10, (2019) 5796-1 – 5796-7 (I-19-19) (https://www.nature.com/articles/s41467-019-13590-8)

2018年

E-18-01 “Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition”
K. Okita, K. Inaba, Z. Yatabe, and Y. Nakamura
Jpn. J. Appl. Phys., vol.57, (2018) 065503-1 – 065503-7
E-18-02 “Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization”
N. Urakami, T. Okuda, and Y. Hashimoto
Jpn. J. Appl. Phys., vol.57, (2018) 02CB07-1 – 02CB07-5
E-18-03 “MBE growth and morphology control of ZnO nanobelts with polar axis perpendicular to growth direction”
O.W. Kennedy, M.L. Coke, E.R. White, M.S.P. Shaffer, and P.A. Warburtono
(OpenAccess) Mater. Lett., vol.212, (2018) 51 – 53 (https://www.sciencedirect.com/science/article/pii/S0167577X17314830)
E-18-04 “The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth”
A. Bardhan, N. Mohan, H. Chandrasekar, P. Ghosh, D.V. Sridhara Rao, and S. Raghavan
Jour. Appl. Phys., vol.123, (2018) 165108-1 – 165108-10
E-18-05 “Oxide heterostructures for high density 2D electron gases on GaAs”
L. Kornblum, J. Faucher, M.D. Morales-Acosta, M.L. Lee, C.H. Ahn, and F.J. Walker
Jour. Appl. Phys., vol.123, (2018) 025302-1 – 025302-5
E-18-06 “Growth of LaAlO3 on silicon via an ultrathin SrTiO3 buffer layer by molecular-beam epitaxy”
Z. Wang, Z. Chen, A.B. Mei, X. Bai, L.F. Kourkoutis, D.A. Muller, and D.G. Schlom
Jour. Vac. Sci. Technol. -A, vol.36, (2018) 021507-1 – 021507-7
E-18-07 “Polarized neutron reflectivity studies on epitaxial BiFeO3/La0.7Sr0.3MnO3 heterostructure integrated with Si (100)”
S.R. Singamaneni, J.T. Prater, A. Glavic, V. Lauter, and J. Narayan
(OpenAccess) AIP Advances, vol.8, (2018) 055821-1 – 055821-7 (https://aip.scitation.org/doi/10.1063/1.5006473)
E-18-08 “Discovery of a magnetic conductive interface in PbZr0.2Ti0.8O3 /SrTiO3 heterostructures”
Y. Zhang, L. Xie, J. Kim, A. Stern, H. Wang, K. Zhang, X. Yan, L. Li, H. Liu, G. Zhao, H. Chi, C. Gadre, Q. Lin, Y. Zhou, C. Uher, T. Chen, Y.-H. Chu, J. Xia, R. Wu, and X. Pan
(OpenAccess) Nat. Commun, vol.9, (2018) 685-1 – 685-9 (http://www.nature.com/articles/s41467-018-02914-9)
E-18-09 “Reconstruction-stabilized epitaxy of LaCoO3/SrTiO3(111) heterostructures by pulsed laser deposition”
M. Hu, Q. Zhang, L. Gu, Q. Guo, Y. Cao, M. Kareev, J. Chakhalian, and J. Guo
Appl. Phys. Lett., vol.112, (2018) 031603-1 - 031603-5 (R-18-02)
E-18-10 “Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth”
J. Mickevičius, D. Dobrovolskas, T. Steponavičius, T. Malinauskas, M. Kolenda, A. Kadys, and G. Tamulaitis
Appl. Surf. Sci., vol.427, (2018) 1027 - 1032
E-18-11 “The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition”
I. Altuntas, I. Demir, A.E. Kasapoğlu, S. Mobtakeri, E. Gür, and S. Elagoz
J. Phys. D: Appl. Phys., vol.51, (2018) 035105-1 – 035105-8
E-18-12 “High-quality TiN/AlN thin film heterostructures on c-sapphire”
A. Moatti, and J. Narayan
Acta Materialia, vol.145, (2018) 134 – 141
E-18-13 “Magnetotransport properties of Ca0.8La0.2IrO3 epitaxial films”
Y.K. Liu, H.F. Wong, S.M. Ng, K.K. Lam, C.L. Mak, and C.W. Leung
Mat. Lett., vol.213, (2018) 135 – 137
E-18-14 “Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films”
R. Takabe, T. Deng, K. Kodama, Y. Yamashita, T. Sato, K. Toko, and T. Suemasu
Jour. Appl. Phys., vol.123, (2018) 045703-1 – 045703-7
E-18-15 “Multiphase nanodomains in a strained BaTiO3 film on a GdScO3 substrate”
S. Kobayashi, K. Inoue, T. Kato, Y. Ikuhara, and T. Yamamoto
Jour. Appl. Phys., vol.123, (2018) 064102-1 – 054102-10
E-18-16 “Tunable critical temperature for superconductivity in FeSe thin films by pulsed laser deposition”
Z. Feng, J. Yuan, G. He, W. Hu, Z. Lin, D. Li, X. Jiang, Y. Huang, S. Ni, J. Li, B. Zhu, X. Dong, F. Zhou, H. Wang, Z. Zhao, and K. Jin
(OpenAccess) Sci. Reports, vol.8, (2018) 4039-1 - 4039-6 (R-18-06) (http://www.nature.com/articles/s41598-018-22291-z)
E-18-17 “Effect of Nb concentration on the spin-orbit coupling strength in Nb-doped SrTiO3 epitaxial thin films”
S.W. Cho, M. Lee, S. Woo, K. Yim, S. Han, W.S. Choi, and S. Lee
(OpenAccess) Sci. Reports, vol.8, (2018) 5739-1 - 5739-8 (R-18-07) (http://www.nature.com/articles/s41598-018-23967-2)
E-18-18 “Particulate reduction in ternary-compound film growth via pulsed laser deposition from segmented binary-targets”
J.A.Grant-Jacob, J.J. Prentice, S.J. Beecher, D.P. Shepherd, R.W. Eason, and J.I. Mackenzie
(OpenAccess) Mater. Res. Express, vol.5, (2018) 036402-1 – 036402-7 (http://iopscience.iop.org/article/10.1088/2053-1591/aab0ef)
E-18-19 “Yb-doped mixed-sesquioxide films grown by pulsed laser deposition”
J.J. Prentice, J.A. Grant-Jacob, D.P. Shepherd, R.W. Eason, and J.I. Mackenzie
(OpenAccess) Jour. Cryst. Growth, vol.491, (2018) 51 – 56 (https://www.sciencedirect.com/science/article/pii/S0022024818301519)
E-18-20 “Transport phenomena in SrVO3/SrTiO3 superlattices”
M. Gu, S.A Wolf, and J, Lu
J. Phys. D: Appl. Phys., vol.51, (2018) 10LT01-1 – 10LT01-6
E-18-21 “Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films”
C. Zhen, X.Z. Zhang, W. Wei, W. Guo, A. Pant, X. Xu, J. Shen, L. Ma, and D. Hou
J. Phys. D: Appl. Phys., vol.51, (2018) 145308-1 – 145308-9
E-18-22 “Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers”
R. Moalla, S. Cueff, J. Penuelas, B. Vilquin, G. Saint-Girons, N. Baboux, and R. Bachelet
(OpenAccess) Sci. Reports, vol.8, (2018) 4332-1 - 4332-8 (http://www.nature.com/articles/s41598-018-22349-y)
E-18-23 “Suppression of Na interstitials in Na-F codoped ZnO”
W. Huo, Z. Mei, A. Tang, H. Liang, and X. Du
Jour. Appl. Phys., vol.123, (2018) 161403-1 – 161403-6
E-18-24 “Control of the energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition”
J. Tatebayashi, G. Yoshii, T. Nakajima, H. Kamei, J. Takatsu, D. M. Lebrun, and Y. Fujiwara
Jour. Appl. Phys, vol.123, (2018) 161409-1 – 161409-6
E-18-25 “p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)”
T. Deng, T. Sato, Z. Xu, R. Takabe, S. Yachi, Y. Yamashita, K. Toko, and T.Suemasu
Appl. Phys. Express, vol.11, (2017) 062301-1 – 062301-5 (I-18-03)
E-18-26 “Thickness-Dependent Strain Evolution of Epitaxial SrTiO3 Thin Films Grown by Ion Beam Sputter Deposition”
G. Panomsuwan and N. Saito
Cryst. Res. Technol., vol.53, (2018) 1700211-1 – 1700211-7 (I-18-04, R-18-8)
E-18-27 “SiGe nano-heteroepitaxy on Si and SiGe nano-pillars”
M. Mastari, M. Charles, Y. Bogumilowicz, Q.M. Thai, P. Pimenta-Barros, M. Argoud, A.M. Papon, P. Gergaud, D. Landru, Y. Kim, and J.M. Hartmann
Nanotechnology, vol.29, (2018) 275702-1 – 275702-10 (I-18-05)
E-18-28 “Proposition of a model elucidating the AlN-on-Si (111) microstructure”
M. Mastari, M. Charles, Y. Bogumilowicz, Q.M. Thai, P. Pimenta-Barros, M. Argoud, A.M. Papon, P. Gergaud, D. Landru, Y. Kim, and J.M. Hartmann
Jour. Appl. Phys, vol.123, (2018) 215701-1 – 215701-7 (I-18-07)
E-18-29 “Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase”
A. Quintero, P. Gergaud, J. Aubin, J.-M. Hartmann, V. Reboud, and P. Rodriguez
Jour. Appl. Cryst, vol.51, (2018) 1113 – 1140 (I-18-08)
E-18-30 “Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law”
G.T. Dang, T. Yasuoka, Y. Tagashira, T. Tadokoro, W. Theiss, and T. Kawaharamura
Appl. Phys. Lett., vol.113, (2018) 062102-1 – 062102-5 (I-18-09)
E-18-31 “Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction”
A. Quintero, P. Gergaud, J. Aubin, J.M. Hartmann, N. Chevalier, J.P. Barnes, V. Loup, V. Reboud, F. Nemouchi, and Ph. Rodriguez
Jour. Appl. Phys., vol.124, (2018) 085305-1 – 085305-10 (I-18-11)
E-18-32 “Transition from minority to majority spin transport in iron-manganese nitride Fe4-xMnxN films with increasing x”
A. Anzai, T. Gushi, T. Komori, S. Honda, S. Isogami, and T. Suemasu
Jour. Appl. Phys., vol.124, (2018) 123905-1 – 123905-8 (I-18-12)
E-18-33 “Magnetotransport in Bi2Se3 thin films epitaxially grown on Ge(111)”
T. Guillet, A. Marty, C. Beigné, C. Vergnaud, M.-T. Dau, P. Noël, J. Frigerio, G. Isella, and M. Jamet
(OpenAccess) AIP Advances, vol.8, (2018) 115125-1 – 115125-11 (I-18-14) (https://aip.scitation.org/doi/full/10.1063/1.5048547)
E-18-34 “Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films: Structural stability and related electrical transport properties”
S.G. Bhat, N. Gauquelin, N.K. Sebastian, A. Sil, A. Béché, J. Verbeeck, D. Samal, and P. S. Anil Kumar
(OpenAccess) EuroPhys. Lett., vol.122, (2018) 28003-1 – 28003-6 (Editor’s Choice) (https://iopscience.iop.org/article/10.1209/0295-5075/122/28003)
E-18-35 “Surface and interface properties of polar thin films on a ferroelectric substrate: ZnO on LiNbO3 (0001) and (0001)”
X. Zhu, and E.I. Altman
Jour. Vac. Sci. Technol. -A, vol.36, (2018) 021511-1 – 021511-10 (R-18-10)
E-18-36 “Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition”
R. Wakabayashi, M. Hattori, K. Yoshimatsu, K. Horiba, H. Kumigashira, and A. Ohtomo
Appl. Phys. Lett., vol.112, (2018) 232103-1 – 232103-4 (R-18-12)
E-18-37 “Measurements of the band alignment at coherent α-Ga2O3/Al2O3 heterojunctions”
T. Oshima, Y. Kato, E. Kobayashi, and K. Takahashi
Jpn. Jour. Appl. Phys., vol.57, (2018) 080308-1 – 080308-4 (R-18-26)
E-18-38 “Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications”
I. Demir, I. Altuntas, B. Bulut, M. Ezzedini, Y. Ergun, and S. Elagoz
JSemicond. Sci. Technol., vol.33, (2018) 055005-1 – 055005-8
E-18-39 “Electrical andstructuralpropertiesofepitaxiallydepositedchromium thin films”
M. Ohashi, M. Sawabu, H. Nakanishi, K. Ohashi, and K. Maeta
Physica –B, vol.536, (2018) 790 – 792 (R-18-30)
E-18-40 “Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal”
M. Takayanagi, T. Tsuchiya, W. Namiki, S. Ueda, M. Minohara, K. Horiba, H. Kumigashira, K. Terabe, and T. Higuchi
Appl. Phys. Lett., vol.122, (2018) 133106-1 – 133106-5
E-18-41 “Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates”
T. Imajo, K. Toko, R. Takebe, N. Saito, N. Yoshizawa, and T. Suemasu
(OpenAccess) Nanoscale Res. Lett., vol.13, (2018) 22-1 – 22-5 (https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-018-2437-1)
E-18-42 “Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios”
H.P. Nair, Y. Liu, J.P. Ruf, N.J. Schreiber, S-L. Shang, D.J. Baek, B.H. Goodge, L.F. Kourkoutis, Z-K. Liu, K.M. Shen, and D.G. Schlom
(OpenAccess) APL Mater., vol.6, (2018) 046101-1 – 046101-11 (https://aip.scitation.org/doi/10.1063/1.5023477)
E-18-43 “Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO(001)”
S.G. Bhat, N.K. Sebastian, and P.S. Anil Kumar
Physica –B, vol.536, (2018) 614 – 619
E-18-44 “Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications”
S. Tomasulo, C.A. Affouda, N.A. Mahadik, M.E. Twigg, M.K. Yakes, and E.H. Aifer
Jour. Vac. Sci. Technol. –B, vol.36, (2018) 02D108-1 – 02D108-6
E-18-45 “Direct epitaxial integration of the ferromagnetic semiconductor EuO with Si(111)”
D.V. Averyanov, I.S. Sokolov, A.M. Tokmachev, I.A. Karateev, O.A. Kondratev, A.N. Taldenkov, O.E. Parfenov, and VG. Storchak
Jour. Magn. Magn. Mater., vol.459, (2018) 136 – 140
E-18-46 “SmartLab Studio II を用いたリアルタイム解析 ・表示機能について”
葛巻 貴大・小城 あや
リガクジャーナル, vol.49(1), (2018) 20 - 22 (M-18-51)
E-18-47 “Bulk transport properties of bismuth selenide thin films grown by magnetron sputtering approaching the two-dimensional limit”
Y.R. Sapkota, and D. Mazumdar
Jour. Appl. Phys., vol.124, (2018) 105306-1 – 105306-7 (R-18-19)
E-18-48 “Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors”
S. Rathkanthiwar, A. Kalra, R. Muralidharan, D.N. Nath, and S. Raghavan
Jour. Cryst. Growth., vol.498, (2018) 35 – 42
E-18-49 “Room temperature ferromagnetism in BiFe1-xMnxO3 thin film induced by spinstructure manipulation”
K. Shigematsu, T. Asakura, H. Yamamoto, K. Shimizu, M. Katsumata, H. Shimizu, Y. Sakai, H. Hojo, K. Mibu, and M. Azuma
Appl. Phys. Lett., vol.112, (2018) 192905-1 – 192905-4
E-18-50 “Pulsed laser deposition of crystalline garnet waveguides at a growth rate of 20 µm per hour”
J.A. Grant-Jacob, S.J. Beecher, J.J. Prentice, D.P. Shepherd, J.I. Mackenzie, and R.W. Eason
Surf. Coat. Technol., vol.343, (2018) 7 – 10
E-18-51 “Crystalline and magnetooptical characteristics of (Tb,Bi)3(Fe,Ga)5O12 deposited on (Y,Nd)3Al5O12”
R. Morimoto, T. Goto, Y. Nakamura, P.B. Lim, H. Uchida, and M. Inoue
Jpn. Jour. Appl. Phys., vol.57, (2018) 061101-1 – 061101-5
E-18-52 “Control of Domain Structures in Multiferroic Thin Films through Defect Engineering”
L. Li, J.R. Jokisaari, Y. Zhang, X. Cheng, X. Yan, C. Heikes, Q. Lin, C. Gadre, D.G. Schlom, L.-Q. Chen, and X. Pan
Adv. Mater., vol.30, (2018) 1802737-1 – 1802737-7
E-18-53 “Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy”
K. R. Khiangte, J.S. Rathore, J. Schmid, H.J. Osten, A. Laha, and S. Mahapatra
J. Phys. D: Appl,. Phys., vol.51, (2018) 32LT01-1 – 32LT01-6
E-18-54 “Magnetic properties of bismuth-substituted neodymium iron garnet films on Gd3Ga5O12(100) substrates determined by ferromagnetic resonance measurements”
J. Yamakita, G. Lou, M. Nishikawa, T. Kato, S. Iwata, and T. Ishibashi
Jpn. Jour. Appl. Phys., vol.57, (2018) 09TC01-1 – 09TC01-5
E-18-55 “SEpitaxial integration and properties of SrRuO3 on silicon”
Z. Wang, H.P. Nair, G.C. Correa, J. Jeong, K. Lee, E.S. Kim, A. Seidner H., C.S. Lee, H.J. Lim, D.A. Muller, and D.G. Schlom
(OpenAccess) APL Mater., vol.6, (2018) 086101-1 – 086101-10 (https://aip.scitation.org/doi/10.1063/1.5041940)
E-18-56 “Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si(111) heterostructures”
K.R. Khiangte, J.S. Rathore, S. Das, R.S. Pokharia, J. Schmidt, H.J. Osten, A. Laha, and S. Mahapatra
Jour. Appl. Phys., vol.124, (2018) 065704-1 – 065704-8
E-18-57 “Real-time analysis and display function using SmartLab Studio II”
T. Kuzumaki, and A. Ogi
Rigaku Journal, vol.34(2), (2018) 17 – 20 (M-18-53)
E-18-58 “Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals”
M. Meduňa, F. Isa, A. Jung, A. Marzegalli, M. Albani, G. Isella, K. Zweiacker, L. Miglioe, and H. von Känelc
Jour. Appl. Cryst., vol.51, (2018) 368 – 385
E-18-59 “Homoepitaxial HVPE GaN: A potential substrate for high performance devices”
J.A. Freitas Jr., J.C. Culbertson, N.A. Mahadik, M.J. Tadjer, S. Wu, B. Raghothamachar, M. Dudley, T. Sochacki, and M. Bockowski
Jour. Cryst. Growth, vol.500, (2018) 104 – 110
E-18-60 “Domain epitaxy of crystalline BeO films on GaN and ZnO substrates”
S.M. Lee, J.H. Yum, E.S. Larse, S. Shervin, W. Wang, J-H. Ryou, C.W. Bielawski, W.C. Lee, S.K. Kim, and J. Oh
Jour. Amer. Ceram. Soc., vol.102, (2018) 3745 – 3752
E-18-61 “Structural, magnetic, and electron-transport properties of epitaxial Mn2PtSn films”
Y. Jin, S. Valloppilly, P. Kharel, J. Waybright, P. Lukashev, X.Z. Li, and D.J. Sellmyer
Jour. Appl. Phys., vol.124, (2018) 103903-1 – 103903-6
E-18-62 “Electrochromic properties of epitaxial WO3 thin films grown on sapphire substrates”
M. Yano, W. Kuwagata, H. Mito, K. Koike, S. Kobayashi, and K. Inaba
Jpn. Jour. Appl. Phys., vol.57, (2018) 100309-1 – 100309-4
E-18-63 “Realization of vertical metal semiconductor heterostructures via solution phase epitaxy”
X. Wang, Z. Wang, J. Zhang, X. Wang, Z. Zhang, J. Wang, Z. Zhu, Z. Li, Y. Liu, X. Hu, J. Qiu, G. Hu, B. Chen, N. Wang, Q. He, J. Chen, J. Yan, W. Zhang, T. Hasan, S. Li, H. Li, H. Zhang, Q. Wang, X. Huang, and W. Huang
(OpenAccess) Natur. Commun., vol.9, (2018) 3611-1 – 3611-11 (https://www.nature.com/articles/s41467-018-06053-z)
E-18-64 “Bulk photovoltaic effects in Mn-doped BiFeO3 thin films and the optical strains”
S. Nakashima, R. Hayashimoto, H. Fujisawa, and M. Shimizu
Jpn. Jour. Appl. Phys., vol.57, (2018) 11UF11-1 – 11UF11-4
E-18-65 “Growth and superconductivity of niobium titanium alloy thin films on strontium titanate (001) single-crystal substrates for superconducting joints”
Y. Shimizu, K. Tonooka, Y. Yoshida, M. Furuse, and H. Takashima
(OpenAccess) Sci. Reports, vol.8, (2018) 15135-1 – 15135-5 (https://www.nature.com/articles/s41598-018-33442-7)
E-18-66 “Effect of Cr substitution on ferrimagnetic and ferroelectric properties of GaFeO3 epitaxial thin films”
T. Katayama, T. Osakabe, S. Yasui, Y. Hamasaki, B.N. Rao, M. Zhang, and M. Itoh
Appl. Phys. Lett., vol.113, (2018) 162901-1 – 162901-4
E-18-67 “Demystifying the growth of superconducting Sr2RuO4 thin films”
H.P. Nair, J.P. Ruf, N.J. Schreiber, L. Miao, M.L. Grandon, D.J. Baek, B.H. Goodge, J.P.C. Ruff, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom
(OpenAccess) APL Mater., vol.6, (2018) 101108-1 – 101108-8 (https://aip.scitation.org/doi/10.1063/1.5053084)
E-18-68 “Tuning the crystallographic orientation and magnetic properties of multiferroic CuO epitaxial film on single crystalline SrTiO3 substrates”
A. Sil, M.H. Naik, R. Ranjan, and P.S.A. Kumar
Jour. Appl. Phys., vol.124, (2018) 085303-1 – 085303-6
E-18-69 “Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds”
H.A. Al-Atabi, N. Khan, E. Nour, J. Mondoux, Y. Zhang, and J.H. Edgar
Appl. Phys. Lett., vol.113, (2018) 122106-1 – 122106-5
E-18-70 “Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy”
E. Arslan, S. Altındal, S. Ural, Ö.A. Kaya, M. Öztürk, and E. Özbay
Jour. Vac. Sci. Technol. -B, vol.36, (2018) 061209-1 – 061209-10
E-18-71 “Surface engineering with Ar+/O2+ ion beam bombardment: Tuning the electronic and magnetic behavior of Ni80Fe20/La0.7Sr0.3MnO3/SrTiO3(001) junctions”
I. Bergenti, P.K. Manna, C.-H. Lin, P. Graziosi, X. Liu, G.L. Causer, F. Liscio, A. Ruotolo, V.A. Dediu, J. van Lierop, F. Klose, and K.-W. Lin
Jour. Appl. Phys., vol.124, (2018) 183903-1 – 183903-10
E-18-72 “Distinguishing charge and strain coupling in ultrathin (001)-La0.7Sr0.3MnO3/PMN-PT heterostructures”
H. Huang, Z. Chen, C. Feng, Y. Yang, J. Wang, J. Zhang, B. Hong, S. Hu, X. Zhai, R. Peng, Z. Fu, Y. Zhao, and Y. Lu
Appl. Phys. Lett., vol.113, (2018) 262901-1 – 262901-5
E-18-73 “Thermal solid-phase crystallization of amorphous CuCrO2:N thin films deposited by reactive radio-frequency magnetron sputtering”
H. Chiba, N. Hosaka, T. Kawashima, and K. Washio
Thin Solid Films, vol.652, (2018) 16 – 22 (M-18-54)
E-18-74 “Large anisotropy in conductivity of Ti2O3 films”
K. Yoshimatsu, H. Kurokawa, K. Horiba, H. Kumigashira, and A. Ohtomo
(OpenAccess) APL Mater., vol.6, (2018) 101101-1 – 101101-8 (https://aip.scitation.org/doi/10.1063/1.5050823)

2017年

E-17-01 “Introduction to XRD analysis of modern functional thin films using a 2-dimensional detector – (2) Analysis of epitaxial films”
K. Inaba
Rigaku Journal, vol.33, no.1, (2017) 10 – 14
E-17-02 “Surface modification of a-plane sapphire substrates and its effect on crystal orientation of ZnTe layer”
T. Nakasu, W. Sun, and M. Kobayashi
Jpn. Jour. Appl. Phys., vol.56, (2017) 015501-1 – 015501-6
E-17-03 “Layer-by-layer epitaxial thin films of the pyrochlore Tb2Ti2O7”
L. Bovo, C.M. Rouleau, D. Prabhakaran, and S.T. Bramwell
(OpenAccess) Nanotechnology, vol.28, (2017) 055708-1 – 055708-8 (R-17-01) (http://iopscience.iop.org/article/10.1088/1361-6528/aa5112)
E-17-04 “Tin Compensation for the SnS Based Optoelectronic Devices”
S.F. Wang, W. Wang, W.K. Fong, Y. Yu, and C. Surya
(OpenAccess) Sci. Reports, vol.7, (2017) 39704-1 – 39704-10 (http://www.nature.com/articles/srep39704)
E-17-05 “Direct Observation of the Layer-by-Layer Growth of ZnO Nanopillar by In situ High Resolution Transmission Electron Microscopy”
X. Li, S. Cheng, S. Deng, X. Wei, J. Zhu, and Q. Chen
(OpenAccess) Sci. Reports, vol.7, (2017) 40911-1 – 40911-8 (http://www.nature.com/articles/srep40911)
E-17-06 “Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells”
M.E. Bayu, C.T. Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu
Jpn. Jour. Appl. Phys., vol.56, (2017) 05DB01-1 – 05DB01-5
E-17-07 “Anomalous resistivity upturn in epitaxial L21-Co2MnAl films”
L.J. Zhu and J.H. Zhao
(OpenAccess) Sci. Reports, vol.7, (2017) 42931-1 – 42931-7 (R-17-4) (http://www.nature.com/articles/srep42931)
E-17-08 “Polarization fatigue of BiFeO3 films with ferromagnetic metallic electrodes”
C. Chen, J. Wang, C. Li, Z. Wen, Q. Xu, and J. Du
(OpenAccess) AIP Advances, vol.7, (2017) 055829-1 – 055829-5 (https://aip.scitation.org/doi/10.1063/1.4977761)
E-17-09 “YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy”
S. Sharma, E. Hildebrandt, S.U. Sharath, I. Radulov, and L. Alff
Jour. Magn. Magn. Mater., vol.432, (2017) 382 – 386 (I-17-01, R-17-06)
E-17-10 “Microstructure analysis of IrO2 thin films”
X. Hou, R. Takahashi, T. Yamamoto, and M. Lippmaa
Jour. Cryst. Growth, vol.462, (2017) 24 – 28 (I-17-02)
E-17-11 “Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices”
X. Zhang, S. Meng, D. Song, Y. Zhang, Z. Yue, and V.G. Harris
(OpenAccess) Sci. Reports, vol.7, (2017) 44193-1 – 44193-9 (http://www.nature.com/articles/srep44193)
E-17-13 “Effect of disorder on the resistivity of CoFeCrAl films”
Y. Jin, R. Skomski, P. Kharel, S.R. Valloppilly, and D.J. Sellmyer
(OpenAccess) AIP Advances, vol.7, (2017) 055834-1 – 055834-6 (https://aip.scitation.org/doi/10.1063/1.4978591)
E-17-14 “X-ray investigation of strained epitaxial layer systems by reflections in skew geometry”
P. Zaumseil
Jour. Appl. Cryst., vol.50, (2017) 475 – 480
E-17-15 “Interfacial orbital preferential occupation induced controllable uniaxial magnetic anisotropy observed in Ni/NiO(110) heterostructures”
Y.J. Zhang, L. Wu, J. Ma, Q.H. Zhang, A. Fujimori, J. Ma, Y.H. Lin, C.W. Nan, and N.X. Sun
(OpenAccess) NPJ Quantum Mater., vol.2, (2017) 17-1 – 17-7 (http://www.nature.com/articles/s41535-017-0020-0)
E-17-16 “Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band”
J. Mickevičius, D. Dobrovolskas, R. Aleksiejūnas, K. Nomeika, T. Grinys, A. Kadys, and G. Tamulaitis
Jour. Cryst. Growth, vol.459, (2017) 173 – 177
E-17-17 “Ferromagnetism at Room Temperature Induced by Spin Structure Change in BiFe1−xCoxO3 Thin Films”
H. Hojo, R. Kawabe, K. Shimizu, H. Yamamoto, K. Mibu, K. Samanta, T. Saha-Dasgupta, and M. Azuma
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E-17-18 “Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films”
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Adv. Mater. Interfaces, vol.4, (2017) 1601011-1 – 1601011-10
E-17-19 “Effect of p-BaSi2 layer thickness on the solar cell performance of p-BaSi2/n-Si heterojunction solar cells”
S. Yachi, R. Takabe, K. Toko, and T. Suemasu
Jpn. Jour. Appl. Phys., vol.56, (2017) 05DB03-1 – 05DB03-5
E-17-20 “Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate”
Y. Satoh, Y. Itoh, T. Kawashima, and K. Washio
Thin Solid Films, vol.621, (2017) 42 – 46 (I-17-03)
E-17-21 “Self-assembly of very-low height/width aspect-ratio Li3Ni2NbO6 disks embedded in Li3NbO4 epitaxial films”
H. Kawasoko, R. Shimizu, Y. Takagi, K. Yamamoto, I. Sugiyama, S. Shiraki, and T. Hitosugi
Thin Solid Films, vol.621, (2017) 202 – 206 (I-17-04)
E-17-22 “Substrate Induced Strain Field in FeRh Epilayers Grown on Single Crystal MgO (001) Substrates”
C.W. Barton, T.A. Ostler, D. Huskisson, C.J. Kinane, S.J. Haigh, G. Hrkac, and T. Thomson
(OpenAccess) Sci. Reports, vol.7, (2017) 44397-1 – 44397-9 (http://www.nature.com/articles/srep44397)
E-17-23 “Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates”
M.T. Hardy, B.P. Downey, N. Nepal, D.F. Storm, D.S. Katzer, and D.J. Meyer
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E-17-24 “Effect of lattice strain on cobalt ferrite Co0.75Fe2.25O4(111) thin films”
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Jpn. Jour. Appl. Phys., vol.56, (2017) 053001-1 – 053001-5 (R-17-10, I-17-05)
E-17-25 “Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors”
S. Rathkanthiwar, A. Kalra, S.V. Solanke, N. Mohta, R. Muralidharan, S. Raghavan, and D.N. Nath
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E-17-26 “Growth and ferroelectric properties of La and Al codoped BiFeO3 epitaxial films”
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E-17-27 “Surface diffusion measurements of In on InGaAs enabled by droplet epitaxy”
M.A. Stevens, S. Tomasulo, S. Maximenko, T.E. Vandervelde, and M.K. Yakes
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E-17-28 “The asymmetric band structure and electrical behavior of the GdScO3/GaN system”
S. Iacopetti, P. Shekhter, R. Winter, T.C.U. Tromm, J. Schubert, and M. Eizenberg
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E-17-29 “Control of crystal-domain orientation in multiferroic Ga0.6Fe1.4O3 epitaxial thin films”
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Appl. Phys. Lett., vol.110, (2017) 212905-1 – 212905-4
E-17-30 “Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 ℃”
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Jpn. Jour. Appl. Phys., vol.56, (2017) 06HE08-1 – 06HE08-6
E-17-31 “High resolution X-ray diffraction studies of epitaxial ZnO nanorods grown by reactive sputtering”
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E-17-32 “Growth of electronically distinct manganite thin films by modulating cation stoichiometry”
S. Ryu, J. Lee, E. Ahn, J.W. Kim, A. Herklotz, J.-S. Bae, H.N. Lee, Y.H. Kim, J.-Y. Kim, T.-Y. Jeon, J. Cho, S. Park, and H. Jeen
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E-17-33 “Crystal structure and magnetism in κ−Al2O3-type AlxFe2-xO3 films on SrTiO3(111)”
Y. Hamasaki, T. Shimizu, S. Yasui, T. Shiraishi, A. Akama, T. Kiguchi, T. Taniyama, and M. Itoh
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E-17-34 “Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3”
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(OpenAccess) NPG Asia Mater., vol.9, (2017) e402-1 – e-402-5 (http://www.nature.com/articles/am2017111)
E-17-35 “Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate”
Y. Sharma, R. Agarwal, C. Phatak, B. Kim, S. Jeon, R.S. Katiyar, and S. Hong
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E-17-36 “Molecular beam epitaxy growth of SmFeAs(O,F) films with Tc = 55 K using the new fluorine source FeF3”
M. Sakoda, A. Ishii, K. Takinaka, and M. Naito
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E-17-37 “Enhanced resistive memory in Nb-doped BaTiO3 ferroelectric diodes”
Q. Jin, C. Zheng, Y. Zhang, C. Lu, J. Dai, and Z. Wen
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E-17-38 “Facile synthesis of various epitaxial and textured polymorphs of vanadium oxide thin films on the (0006)-surface of sapphire substrates”
B. Hong, J. Zhao, K. Hu, Y. Yang, Z. Luo, X. Li, and C. Gao
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E-17-39 “Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers”
M. Apreutesei, R. Debord, M. Bouras, P. Regreny, C. Botella, A. Benamrouche, A. Carretero-Genevrier, J. Gazquez, G. Grenet, S. Pailhès, G. Saint-Girons, and R. Bachelet
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E-17-40 “Low-field magnetoresistance and switching behavior of polycrystalline La0.66Sr0.34MnO3/YSZ(001) films with columnar grain structure”
B. Vengalis , G. Grigaliūnaitė-Vonsevičienė, A. Maneikis, J. Klimantavičius, R. Juškėnas, K. Mažeika
Thin Solid Films, vol.625, (2017) 42 – 48
E-17-41 “Dislocation density and strain-relaxation in Ge1-xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy”
K.R. Khiangte, J.S. Rathore, V. Sharma, S. Bhunia, S. Das, R.S. Fandan, R.S. Pokharia, A. Laha, and S. Mahapatra
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E-17-42 “Interface-induced spontaneous positive and conventional negative exchange bias effects in bilayer La0.7Sr0.3MnO3/Eu0.45Sr0.55MnO3 heterostructures”
J. Krishna Murthy and P. S. Anil Kumar
(OpenAccess) Sci. Reports, vol.7, (2017) 6919-1 – 6919-11 (R-17-24) (http://www.nature.com/articles/s41598-017-07033-x)
E-17-43 “Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate”
N. Takahashi, T. Huminiuc, Y. Yamamoto, T. Yanase, T. Shimada, A. Hirohata, and T. Nagahama
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E-17-44 “Growth and characterization of β−Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors”
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E-17-45 “Permanent magnetic properties of NdFe12Nx sputtered films epitaxially grown on V buffer layer”
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E-17-46 “Photoinduced Strain Release and Phase Transition Dynamics of Solid- Supported Ultrathin Vanadium Dioxide”
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E-17-47 “Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction”
V. Kaganer, T. Ulyanenkova, A. Benediktovitch, M. Myronov, and A. Ulyanenkov
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E-17-48 “X-ray diffraction analysis of cubic zincblende III-nitrides”
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E-17-49 “Domain structure of BiFeO3 thin films grown on patterned SrTiO3(001) substrates”
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E-17-50 “Hybrid reflections from multiple x-ray scattering in epitaxial oxide films”
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E-17-51 “Superconductivity in Ti4O7 and g-Ti3O5 films”
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E-17-52 “Crystal Orientation and Electrical Properties of Tin Oxide Transparent Conducting Films Deposited on Rutile Surface”
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E-17-53 “Preparation of epitaxial yttrium–iron garnet micropatterns using metal–organic decomposition with electron-beam irradiation”
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Jpn. Jour. Appl. Phys., vol.56, (2017) 110303-1 – 110303-4 (I-17-12, R-17-29)
E-17-54 “Resolving alternating stress gradients and dislocation densities across AlxGa1-xN multilayer structures on Si(111)”
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E-17-55 “High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy”
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E-17-56 “Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide”
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E-17-57 “Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties”
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(OpenAccess) ECS Jour. Solid State Sci. Technol., vol.6, (2017) S3060 – S3062 (http://jss.ecsdl.org/content/6/11/S3060.abstract)
E-17-58 “Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy”
T. Nakasu, W. Sun, M. Kobayashi, and T. Asahi
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E-17-59 “Epitaxial growth of LiCoO2 thin films with (001) orientation”
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(OpenAccess) AIP Advances, vol.7, (2017) 115011-1 – 115011-8 (I-17-14) (https://aip.scitation.org/doi/10.1063/1.4999833)
E-17-60 “Insight into the effect of screw dislocations and oxygen vacancy defects on the optical nonlinear refraction response in chemically grown ZnO/Al2O3 films”
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E-17-61 “Ga-polar GaN fi lm grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces”
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Phys. Stat. Sol. –(a), vol.214, (2017) 1600754-1 – 1600754-8
E-17-62 “Effect of Al incorporation in nonpolar m-plane GaN/AlGaN multi-quantum-wells using plasma-assisted molecular-beam epitaxy”
C.B. Lim, A. Ajay, C. Bougerol, E. Bellet-Amalric, J. Schörmann, M. Beeler, and E. Monroy
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E-17-63 “Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures”
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E-17-64 “Electric-field control of tri-state phase transformation with a selective dual-ion switch”
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E-17-65 “Optical critical points of Six Ge1−x −y Sny alloys with high Si content”
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E-17-66 “Atomic layer deposited ZnO films implanted with Yb: The influence of Yb location on optical and electrical properties”
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E-17-67 “Introduction of BaSnO3 and BaZrO3 artificial pinning centres into 2G HTS wires based on PLD-GdBCO films. Phase I of the industrial R&D programme at SuperOx”
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E-17-68 “Deposition and dielectric study as function of thickness of perovskite oxynitride SrTaO2N thin films elaborated by reactive sputtering”
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E-17-69 “Effect of V doping on initial growth of ZnO film on c-face sapphire substrate”
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E-17-70 “Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy”
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Nanotechnology, vol.28, (2017) 135701-1 – 135701-8 (I-17-17)
E-17-71 “Mid-infrared ellipsometry, Raman and X-ray diffraction studies ofAlxGa1−xN/AlN/Si structures”
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E-17-72 “Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3/SrMoO3 heterostructures”
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E-17-73 “Study on thermal solid-phase crystallization of amorphous ZnO thin films stacked on vanadium-doped ZnO films”
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E-17-74 “High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation”
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E-17-75 “Growth conditions of semi and non-polar GaN on Si with Er2O3 buffer layer”
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E-17-76 “Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R = Lu, Yb)”
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E-17-77 “Epitaxial thin film growth of garnet-, GdFeO3-, and YMnO3-type LuFeO3 using pulsed laser deposition”
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E-17-78 “Grating-patterned Bi0.85La0.15Fe0.95Mn0.05O3 epitaxial thin film prepared using photosensitive sol-gel method and its ferromagnetic and ferroelectric properties”
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E-17-79 “Structural, magnetic and transport properties of fully epitaxial LaMnO3/LaAlO3 multilayers”
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E-17-80 “The microstructure of Si surface layers after plasmaimmersion He+ ion implantation and subsequent thermal annealing”
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E-17-81 “Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation”
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E-17-82 “Study of recombination characteristics in MOCVD grown GaN epi-layers on Si”
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E-17-83 “Formation of a Ge-rich Si1−xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation”
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E-17-84 “Highly oriented epitaxial CaFe2O4 thin films on TiO2 substrates grown by pulsed-laser deposition”
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E-17-85 “Polarization properties of nonpolar ZnO films grown on R-sapphire substrates using high-temperature H2O generated by a catalytic reaction”
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E-17-87 “Centimetre-scale micropore alignment in oriented polycrystalline metal–organic framework films via heteroepitaxial growth”
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E-17-88 “Grain orientation effects on the ionic conductivity of neodymia doped ceria thin films”
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O. Skibitzki, I. Prieto, R. Kozak, G. Capellini, P. Zaumseil, Y.A.R. Dasilva, M.D. Rossell, R. Erni, H. von Känel, and T. Schroeder
Nanotechnology, vol.28, (2017) 135301-1 – 145301-10 (I-17-21)
E-17-91 “A Chemical Vapor Deposition Route to Epitaxial Superconducting NbTiN Thin Films”
N. Tsavdaris, D. Harza, S. Coindeau, G. Renou, F. Robaut, E. Sarigiannidou, M. Jacquemin, R. Reboud, M. Hofheinz, E. Blanquet, and F. Mercier
Chem. Mater., vol.29, (2017) 5824 – 5830 (I-17-22)
E-17-92 “Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy”
M. Nakano, Y. Wang, Y. Kashiwabara, H. Matsuoka, and Y. Iwasa
Nano Lett., vol.17, (2017) 5595 – 5599 (I-17-24)
E-17-93 “Ultrahigh Vacuum Synthesis of Strain-Controlled Model Pt(111)-Shell Layers: Surface Strain and Oxygen Reduction Reaction Activity”
S. Kaneko, R. Myochi, S. Takahashi, N. Todoroki, T. Wadayama, and Tadao Tanabe
J. Phys. Chem. Lett., vol.8, (2017) 5360 – 5365 (I-17-25)
E-17-95 “Control of Structural and Electrical Transitions of VO2 Thin Films”
A. Moatti, R. Sachan, J. Prater, and J. Narayan
ACS Appl. Mater. Interface, vol.9, (2017) 24298 – 24307
E-17-96 “Epitaxial Growth of C60 on Rubrene Single Crystals for a Highly Ordered Organic Donor/Acceptor Interface”
H. Mitsuta, T. Miyadera, N. Ohashi, Y. Zhou, T. Taima, T. Koganezawa, Y. Yoshida, and M. Tamura
Cryst. Growth Des., vol.17, (2017) 4622 – 4627
E-17-97 “Fundamental Semiconducting Properties of Perovskite Oxynitride SrNbO2N: Epitaxial Growth and Characterization”
R. Kikuchi, T. Nakamura, S. Tamura, Y. Kaneko, and K. Hato
Chem. Mater., vol.29, (2017) 7697 – 7703
E-17-98 “Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures”
A. Ajay , C.B. Lim, D.A. Browne, J. Polaczyński, E. Bellet-Amalric, J. Bleuse, M.I. den Hertog, and E. Monroy
Nanotechnology, vol.28, (2017) 405204-1 – 405204-9

2016年

E-16-01 “Texture of Ge on SrTiO3 (001) substrates: Evidence for in-plane axiotaxy”
A. Danesc, J. Penuelas, B. Gobaut, and G. Saint-Girons
Surf. Sci., vol.644, (2015) 13-17
E-16-02 “次世代機能性酸化物薄膜の評価 －2次元検出器(HyPix)を活用して－”
稲葉 克彦・小林 信太郎
リガクジャーナル, vol.47(1) (2016) 1-11 (I-16-01)
E-16-03 “Ferroelastic switching in a layered-perovskite thin film”
C. Wang, X. K, J. Wang, R. Liang, Z. Luo, Y. Tian, D. Yi, Q. Zhang, J. Wang, X.F. Han, G. Van Tendeloo, L.Q. Chen, C.W Nan, R. Ramesh, and J. Zhang
Nature Commun., vol.7, (2015) 10636-1 – 10636-9
E-16-04 “Optical properties of single crystalline SrMoO3 thin films”
A. Radetinac, J. Zimmermann, K. Hoyer, H. Zhang, P. Komissinskiy, and L. Alff
Jour. Appl. Phys., vol.119, (2016) 055302-1 – 055302-4 (R-16-3)
E-16-05 “GaAs/Ge crystals grown on Si substrates patterned down to the micron scale”
A.G. Taboada, M. Meduňa, M. Salvalaglio, F. Isa, T. Kreiliger, C.V. Falub, E. Barthazy Meier, E. Müller, L. Miglio, G. Isella, and H. von Känel
Jour. Appl. Phys., vol.119, (2016) 055301-1 – 055301-12
E-16-06 “Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates”
M. Yano, K. Koike, M. Matsuo, T. Murayama,Y. Harada, and K. Inaba
Appl. Surf. Sci., vol.381, (2016) 32 – 35
E-16-07 “Atomic-Scale Engineering of Abrupt interface for Direct Spin Contact of ferromagnetic Semiconductor with Silicon”
D.V. Averyanov, C.G. Karateeva, I.A. Karateev, A.M. Tokmachev, A.L. Vasiliev, S.I. Zolotarev, I.A. Likhachev and V.G. Storchak
(OpenAccess) Sci. Reports, vol.6, (2016) 22841-1 – 22841-9
E-16-08 “Magneto-transport and domain wall scattering in epitaxy L10 MnAl thin film”
L. Luo, N. Anuniwat, N. Dao, Y. Cui, S.A. Wolf, and J. Lu
Jour. Appl. Phys., vol.19, (2016) 103902-1 – 103902-5
E-16-09 “Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition”
M. Yang, Y. Yang, B. Hong, L. Wang, K. Hu, Y. Dong, H. Xu, H. Huang, J. Zhao, H. Chen, L. Song, H. Ju, J. Zhu, J. Bao, X. Li, Y. Gu, T. Yang, X. Gao, Z. Luo, and C. Gao
(OpenAccess) Sci. Reports., vol.6, (2016) 23119-1 –23119-10 (R-16-4)
E-16-10 “Nd0.5Bi2.5Fe5− yGayO12 thin films on Gd3Ga5O12 substrates prepared by metal–organic decomposition”
M. Sasaki, G. Lou, Q. Liu, M. Ninomiya, T. Kato, S. Iwata, and T. Ishibashi
Jpn. Jour. Appl. Phys., vol.55, (2016) 055501-1 – 055501-7
E-16-11 “Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films”
K. Katayama, T. Shimizu, O. Sakata, T. Shiraishi, S. Nakamura, T. Kiguchi, A. Akama, T.J. Konno, H. Uchida, and H. Funakubo
Jour. Appl. Phys., vol.119, (2016) 134101-1 – 134101-7 (I-16-04)
E-16-12 “Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor”
Y. Yamaguchi, Y. Taniyama, H. Takatsu, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura, and Y. Mori
Jpn. Jour. Appl. Phys., vol.55, (2016) 05FB04-1 – 05FB04-4
E-16-13 “Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals”
L. Wang, Y. Yang, J. Zhao, B. Hong, K. Hu, J. Peng, H. Zhang, X. Wen, Z. Luo, X. Li, and C. Gao
Jour. Appl. Phys., vol.119, (2016) 145301-1 – 145301-8 (R-16-07)
E-16-14 “Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition”
S. Rafique, L. Han, M.J. Tadjer, J.A. Freitas Jr., N.A. Mahadik, and H. Zhao
Appl. Phys. Lett., vol.108, (2016) 182105-1 – 182105-6
E-16-15 “Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration”
R. Cariou, W. Chen, Je.-L. Maurice, J. Yu, G. Patriarche, O. Mauguin, L. Largeau, J. Decobert and P.R. Cabarrocas
(OpenAccess) Sci. Reports, vol.6, (2016) 25674-1 – 25674-8 (I-16-05)
E-16-16 “Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen”
C.A. Niedermeier, S. Rhode, S. Fearn, K. Ide, M.A. Moram, H. Hiramatsu, H. Hosono, and T. Kamiya
Appl. Phys. Lett., vol.108, (2016) 172101-1 – 172101-6
E-16-17 “Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures”
C.B. Lim, A. Ajay, C. Bougerol, J. Lähnemann, F. Donatini, J. Schörmann, E. Bellet-Amalric, D.A.Browne, M. Jiménez-Rodríguez, and E. Monroy
Nanotechnology, vol.27, (2016) 145201-1 – 145201-6
E-16-18 “Data storage applications based on LiCoO2 thin films grown on Al2O3 and Si substrates”
E. Svoukis, C.N. Mihailescu, V.H. Mai, O. Schneegans, K. Breza, C. Lioutas, and J. Giapintzakisa
Appl. Surf. Sci., vol.381, (2016) 22 – 27 (I-16-06)
E-16-19 “Structural coupling across the direct EuO/Si interface”
D.V. Averyanov, A.M. Tokmachev, I.A. Likhachev, E.F. Lobanovich, O.E. Parfenov, E.M Pashaev, Y.G. Sadofyev, I.A. Subbotin, S.N .Yakunin, and V.G. Storchak
Nanotechnology, vol.27, (2016) 045703-1 – 045703-7 (R-16-10)
E-16-20 “Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy”
M.T. Hardy, T.O. McConkie, D.J. Smith, D.F. Storm, B.P. Downey, D. Scott Katzer, D.J. Meyer, and N. Nepal
Jour. Vav. Sci. Technol. -A, vol.34, (2016) 021512-1 – 021512-6
E-16-21 “Anomalous Hall effect in the prospective spintronic material Eu1−xGdxO integrated with Si”
O.E. Parfenov, D.V. Averyanov, A.M. Tokmachev, A.N. Taldenkov, and V.G. Storchak
Jour. Phys.: Condens. Matter, vol.28, (2016) 226001-1 – 226001-6
E-16-22 “C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition”
Y. Yamamoto, N. Ueno, M. Sakuraba, J. Murota, A. Mai, and B. Tillack
Thin Solid Films, vol.602, (2016) 24 – 28
E-16-23 “Relationship between dislocation and the visible luminescence band observed in ZnO epitaxial layers grown on c-plane p-GaN templates by chemical vapor deposition technique”
R.K. Saroj and S. Dhar
Jour. Appl. Phys., vol.120, (2016) 075701-1 – 075701-8 (I-16-08)
E-16-24 “Compositional dependence of the band-gap of Ge1-x-ySixSny alloys”
T. Wendav, I.A. Fischer, M. Montanari, M.H. Zoellner, W. Klesse, G. Capellini, N. von den Driesch, M. Oehme, D. Buca, K. Busch, and J. Schulze
Appl. Phys. Lett., vol.108, (2016) 242104-1 – 242104-4
E-16-25 “Crack-free GaN substrates grown by the Na-flux method with a sapphire dissolution technique”
T. Yamada, M. Imanishi, K. Nakamura, K. Murakami, H. Imabayashi, D. Matsuo, M. Honjo, M. Maruyama, M. Imade, M. Yoshimura, and Y. Mori
Appl. Phys. EXpress., vol.9, (2016) 071002-1 – 071002-4
E-16-26 “Propagation loss reduction of ZnMgTe/ZnTe waveguide devices”
W.C. Sun, F. Kazami, J. Wang, T. Nakasu, S. Hattori, T. Kizu, Y. Hashimoto, M. Kobayashi, and T. Asahi
Jpn. Jour. Appl. Phys., vol.58, (2016) 082201-1 – 082201-4
E-16-27 “Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3”
P. Shekhter, D. Schwendt, Y. Amouyal, T.F. Wietler, H.J. Osten, and M. Eizenberg
Jour. Appl. Phys., vol.120, (2016) 014101-1 – 014101-6
E-16-28 “Anomalous electrical properties of Au/SrTiO3 interface”
L. Xu, T. Yajima, T. Nishimura, and A. Toriumi
Jpn. Jour. Appl. Phys., vol.55, (2016) 08PB04-1 – 08PB04-5
E-16-29 “Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth”
M. Englhard, C. Klemp, M. Behringer, A. Rudolph, O. Skibitzki, P. Zaumseil, and T. Schroeder
Jour. Appl. Phys., vol.120, (2016) 045301-1 – 045301-7
E-16-30 “Kinetics and intermediate phases in epitaxial growth of Fe3O4 films from deposition and thermal reduction”
X. Zhang, S. Yang, Z. Yang, and X. Xu
Jour. Appl. Phys., vol.120, (2016) 085313-1 – 085313-8
E-16-31 “Strain evolution of epitaxial tetragonal-like BiFeO3 thin films on LaAlO3(001) substrates prepared by sputtering and their bulk photovoltaic effect”
S. Nakashima, T. Uchida, K. Doi, K. Saitoh, H. Fujisawa, O. Sakata, Y. Katsuya, N. Tanaka, and M. Shimizu
Jpn. Jour. Appl. Phys., vol.55, (2016) 101501-1 – 101501-9
E-16-32 “The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film”
T. Shimizu, K. Katayama, T. Kiguchi, A. Akama, T.J. Konno, O. Sakata, and H. Funakubo
(OpenAccess) Sci. Reports, vol.6, (2016) 32931-1 – 32931-8
E-16-33 “Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices”
T.K. Katayama, T. Shimizu, O. Sakata, T. Shiraishi, S. Nakamura, T. Kiguchi, A. Akama, T.J. Konno, H. Uchida, and H. Funakubo
Appl. Phys. Lett., vol.109, (2016) 112901-1 – 112901-5
E-16-34 “Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer”
T. Grinys, R. Dargis, M. Frentrup, A.K. Jucevičienė, K. Badokas, S. Stanionytė, A. Clark, and T. Malinauskas
Jour. Appl. Phys., vol.120, (2016) 10530-1 – 105301-6
E-16-35 “Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature”
C. Perrin, E. Ghegin, S. Zhiou, F. Nemouchi, P. Rodriguez, P. Gergaud, P. Maugis, D. Mangelinck, and K. Hoummada
Appl. Phys. Lett., vol.109, (2016) 131902-1 – 131902-4 (I-16-10)
E-16-36 “Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresi tance effect”
T. Gushi, K. Ito, S. Higashikozono, F. Takata, H. Oosato, Y. Sugimoto, K. Toko, S. Honda, and T. Suemasu
Jour. Appl. Phys., vol.120, (2016) 113903-1 – 113903-5
E-16-37 “Transparent conducting properties of Re-doped β-MoO3 films”
K. Yamamoto, R. Shimizu, S. Shiraki, and T. Hitosugi
(OpenAccess) APL Mater., vol.4, (2016) 096104-1 – 096104-6
E-16-38 “Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets”
T. Kawaharamura, G.T. Dang, and N. Nitta
Appl. Phys. Lett., vol.109, (2016) 151603-1 – 151603-5
E-16-39 “Evidence of ferroelectricity in ferrimagnetic κ-Al2O3-type In0.25Fe1.75O3 films”
Y. Hamasaki, T. Shimizu, S. Yasui, T. Taniyama, and M. Itoh
Appl. Phys. Lett., vol.109, (2016) 162901-1 – 162901-4 (I-16-11)
E-16-40 “In-situ growth of superconducting SmO1−xFxFeAs thin films by pulsed laser deposition”
S. Haindl, K. Hanzawa, H. Sato, H. Hiramatsu, and H. Hosono
(OpenAccess) Sci. Reports, vol.6, (2016) 35797-1 – 35797-6 (R-16-17)
E-16-41 “High Critical Current Density of YBa2Cu3O7−x Superconducting Films Prepared through a DUV assisted Solution Deposition Process”
Y. Chen, W. Bian, W. Huang, X. Tang, G. Zhao, L. Li, N. Li, W. Huo, J. Jia, and C. You
(OpenAccess) Sci. Reports, vol.6, (2016) 38257-1 – 38257-10
E-16-42 “Evolution of structural distortion in BiFeO3 thin films probed by secondharmonic generation”
J.S. Wang, K.J. Jin, H.Z. Guo, J.X. Gu, Q. Wan, X. He, X.L. Li, X.L. Xu, and G.Z. Yang
(OpenAccess) Sci. Reports, vol.6, (2016) 38268-1 – 38268-9
E-16-43 “Enhanced saturation magnetization in perpendicular L10–MnAl films upon low substitution of Mn by 3d transition metals”
T. Sato, T. Ohsuna, and Y. Kaneko
Appl. Phys. Lett., vol.109, (2016) 243903-1 – 243903-5 (I-16-12)
E-16-44 “Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures”
A. Minj, M.F. Romero, Y. Wang, Ö. Tuna, M. Feneberg, R. Goldhahn, G. Schmerber, P. Ruterana, C. Giesen, and M. Heuken
Appl. Phys. Lett., vol.109, (2016) 221106-1 – 221106-5
E-16-45 “High ionic conductivity in confined bismuth oxide-based heterostructures”
S. Sanna, V. Esposito, M. Christensen, and N. Pryds
(OpenAccess) APL Mater., vol.4, (2016) 121101-1 – 121101-5
E-16-46 “Sol–gel deposition of Pb(Zr,Ti)O3 on GaAs/InGaAs quantum well heterostructure via SrTiO3 templates: Stability of the semiconductor during oxide growth”
B. Meunier, L. Largeau, P. Regreny, R. Bachelet, B. Vilquin, J. Penuelas, and G. Saint-Girons
Thin Solid Films, vol.617, (2016) 67 – 70
E-16-47 “Microstructure and local electrical investigation of lead-free α-La2WO6 ferroelectric thin films by piezoresponse force microscopy”
T. Carlier, M. Chambrier, A. Ferri, A. Bayart, P. Roussel, S. Saitzek, and R. Desfeux
Thin Solid Films, vol.617, (2016) 76 – 81
E-16-48 “Enhanced Piezoelectric Response due to Polarization Rotation in Cobalt-Substituted BiFeO3 Epitaxial Thin Films”
K. Shimizu, H. Hojo, Y. Ikuhara, and M. Azuma
Adv. Mater., vol.28, (2016) 8639 – 8644
E-16-49 “Defect mediated room temperature ferromagnetism and resistance minima study in epitaxial ZnGa0.002Al0.02O transparent conducting oxide films”
N.K Temizer, S. Nori, D. Kumar, and J. Narayan
Jour. Phys. D: Appl. Phys., vol.49, (2016) 345302-1 – 345302-7
E-16-50 “ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers”
K. Ichino, S. Kashiyama, N. Nanba, H. Hasegawa, and T. Abe
Phys. Stat. Sol. –(b)., vol.253, (2014) 1476-1479
E-16-51 “Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO”
K. Pantzas, D.J. Rogers, P. Bove, V.E. Sandana, F.H. Teherani, Y.El Gmili, M. Molinari, G. Patriarche, L. Largeau, O. Mauguin, S. Suresh, P.L. Voss, M. Razeghi, and A. Ougazzaden
Jour. Cryst. Growth, vol.435, (2016) 105 – 109 (I-16-13)
E-16-52 “Ge dots formation using Si(100)-c(4x4) surface reconstruction”
Y. Satoh, Y. Itoh, T. Kawashima, and K. Washio
Jour. Cryst. Growth, vol.438, (2016) 1 – 4 (I-16-14)
E-16-53 “Incorporation of pervasive impurities on HVPE GaN growth directions”
J.A. Freitas Jr., J.C. Culbertson, N.A. Mahadik, E.R. Glaser, T. Sochacki, M. Bockowski, S.K. Lee, K.B. Shim
Jour. Cryst. Growth, vol.456, (2016) 101 – 107
E-16-54 “Modulating Magnetic Properties by Tailoring In-Plane Domain Structures in Hexagonal YMnO3 Films”
S. Deng, S. Cheng, M. Liu, and J. Zhu
ACS Appl. Mater. Interfaces, vol.8, (2016) 25379 – 25385
E-16-55 “Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells”
M. Dmukauskas, A. Kadys, .T Malinauskas, T. Grinys, I. Reklaitis, K. Badokas, M. Skapas, R. Tomašiūnas, D. Dobrovolskas, S. Stanionytė, I. Pietzonka, M. Strassburg, and H-J. Lugauer
Jour. Cryst. Growth, vol.435, (2016) 105 – 109 (I-16-13)
E-16-56 “Coupling Between Strain and Oxygen Octahedral Distortions in Epitaxially Strained GdScO3/SrTiO3 Heterostructure”
Z. Liao, Z. Li, and J. Zhu
Jour. Amer. Ceram. Soc., vol.99, (2016) 3734 – 3738
E-16-57 “Anomalous elongation of c-axis of AlN on Al2O3 grown by MBE using NH3-cluster ions”
Y. Ichinohe, K. Imai, K. Suzuki, and H. Saito
Jour. Cryst. Growth, vol.454, (2016) 111 – 113 (I-16-16, R-16-21)
E-16-58 “Oxygen Vacancy Induced Room-Temperature Metal−Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics”
L Wang, S. Dash, L. Chang, L. You, Y. Feng, X. He, K. Jin, Y. Zhou, H.G. Ong, P. Ren, S. Wang, L. Chen, and J. Wang
ACS Appl. Mater. Interface, vol.8, (2016) 9769 - 9776
E-16-59 “Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique”
B.K. Barick, N. Prasad, R.K. Saroj, and S. Dhar
Jour. Vac. Sci. Technol. -A, vol.34, (2016) 051503-1 – 051503-7 (I-16-17)
E-16-60 “HVPE GaN wafers with improved crystalline and electrical properties”
J.A. Freitas Jr., J.C. Culbertson, N.A. Mahadik, T. Sochacki, M. Iwinska, and M.S. Bockowski
Jour. Cryst. Growth, vol.456, (2016) 113 - 120
E-16-61 “Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns”
G. Niu, G. Capellini, G. Lupina, T. Niermann, M. Salvalaglio, A. Marzegalli, M.A. Schubert, P.Zaumseil, H.M. Krause, O. Skibitzki, M. Lehmann, F. Montalenti, Y.H. Xie, and T. Schroeder
ACS Appl. Mater. Interfaces, vol.8, (2016) 2017-2026 (I-16-18)
E-16-62 “Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications”
A.L. Greenaway, M.C. Sharps, J.W. Boucher, L.E. Strange, M.G. Kast, S.Aloni, and S.W. Boettcher
(OpenAccess) ACS Energy Lett., vol.1, (2016) 402-408
E-16-63 “Heteroepitaxial growth and characterization of BiFeO3 thin films on GaAs”
M.S. Rahman, S. Ghose, J.R. Gatabi, J.S. Rojas-Ramirez, R.K. Pandey, and R. Droopad
Mater. Res. Express, vol.3, (2016) 106408-1 – 106408-9
E-16-64 “THz pulse emission from InAs-based epitaxial structures grown on InP substrates”
I. Nevinskas, R. Butkutė, S. Stanionytė, A. Bičiūnas, A. Geižutis, and A. Krotkus
Semicond. Sci. Technol., vol.31, (2016) 115021-1 – 115021-6
E-16-65 “Growth and magnetic properties of vertically aligned epitaxial CoNi nanowires in (Sr, Ba)TiO3 with diameters in the 1.8–6nm range”
V. Schuler, J. Milano, A. Coati, A. Vlad, M. Sauvage-Simkin, Y. Garreau, D. Demaille, S. Hidki, A. Novikova, E. Fonda, Y. Zheng, and F. Vidal
Nanotechnology, vol.27, (2016) 495601-1 – 495601-10
E-16-66 “Effect of Orientation on Bulk and Surface Properties of Sn-doped Hematite (α-Fe2O3) Heteroepitaxial Thin Film Photoanodes”
D.A. Grave, D. Klotz, A. Kay, H. Dotan, B. Gupta, I. Visoly-Fisher, and A. Rothschild
J. Phys. Chem.-C, vol.120, (2016) 28961 − 28970

2015年

E-15-01 “Epi-cleaning of Ge/GeSn heterostructures”
L. Di Gaspare, D. Sabbagh, M. De Seta, A. Sodo, S. Wirths, D. Buca, P. Zaumseil, T. Schroeder, and G. Capellini
Jour. Appl. Phys., vol.107, (2015) 44-49 (R-15-01)
E-15-02 “Applications of the two-dimensional detector HyPix-3000 in X-ray diffractometry”
A. Ohbuchi
Rigaku Journal, vol.31(1), (2015) 4-9 (M-15-08)
E-15-03 “Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids”
M. Yang, Y. Yang, B. Hong, H. Huang, S. Hu, Y. Dong, H. Wang, H. He, J. Zhao, X. Liu, Z.Luo, X. Li, H. Zhang, and C. Gao
(OpenAccess) AIP Advances, vol.5, (2015) 037114-1 – 037114-6 (R-15-6)
E-15-04 “Magnetic interactions in BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices”
Q. Xu, Y. Sheng, M. Khalid, Y. Cao, Y. Wang, X. Qiu, W. Zhang, M. He, S. Wang, S. Zhou, Q. Li, D. Wu, Y. Zhai, W. Liu, P. Wang, Y.B. Xu, and J. Du
(OpenAccess) Sci. Reports, vol.5, (2015) 09093-1 – 09093-8
E-15-05 “Fabrication of (111)-oriented Ca0.5Sr0.5IrO3/SrTiO3 superlattices - A designed playground for honeycomb physics”
D. Hirai, J. Matsuno, and H. Takagi
(OpenAccess) APL Mater., vol.3, (2015) 041508-1 – 041508-6
E-15-06 “Epitaxy of Li3xLa2/3−xTiO3 Films and the Influence of La Ordering on Li-Ion Conduction”
T. Ohnishi, K. Matsuishi, K. Nishio, and K. Takada
Chem. Mater., vol.27, (2015) 1233 – 1241 (I-15-03)
E-15-07 “Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor”
T. Sumi, Y. Taniyama, H. Takatsu, M. Juta, A. Kitamoto, M. Imade, M. Yoshimura, M. Isenuma, and Y. Mori
Jpn. Jour. Appl. Phys., vol.54, (2015) 051001-1 – 051001-4
E-15-08 “Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas”
T. Sumi, Y. Taniyama, H. Takatsu, M. Juta, A. Kitamoto, M. Imade, M. Yoshimura, M. Isenuma, and Y. Mori
Jpn. Jour. Appl. Phys., vol.54, (2015) 065501-1 – 065501-4
E-15-09 “Complete vertical M-H loop shift in La0.7Sr0.3MnO3/SrRuO3 thin film heterostructures”
S.R. Singamaneni, W. Fan, J.T. Prater, and J. Narayan
Jour. Appl. Phys., vol.117, (2015) 17B711-1 – 17B711-4
E-15-10 “The multiferroic properties of BiFe0.5Mn0.5O3 and BiFeO3/BiMnO3 superlattice films”
Q. Xu, Y. Sheng, M. He, X. Qiu, and J. Du
Jour. Appl. Phys., vol.117, (2015) 17D911-1 – 17D911-4
E-15-11 “Oxide 2D electron gases as a route for high carrier densities on (001) Si”
L. Kornblum, E.N. Jin, D.P. Kumah, A.T. Ernst, C.C. Broadbridge, C.H. Ahn, and F.J. Walker
Appl. Phys. Lett., vol.106, (2015) 201602-1 – 201602-5
E-15-12 “Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3”
Z.Q. Zeng, A. Podpirka, S.W. Kirchoefer, T.J. Asel, and L.J. Brillson
Appl. Phys. Lett., vol.106, (2015) 182903-1 – 182903-5
E-15-13 “Comparison of topotactic fluorination methods for complex oxide films”
E.J. Moon, A.K. Choquette, A. Huon, S.Z. Kulesa, D. Barbash, and S.J. May
(OpenAccess) APL Mater., vol.3, (2015) 062511-1 – 062511-7
E-15-14 “Local polarization switching in epitaxial thin films of ferroelectric (Bi1/2Na1/2)TiO3”
Y. Kitanaka, H. Matsuo, Y. Noguchi, M. Miyayama
J. Asian Ceram. Soc., vol.3, (2015) 160 – 163
E-15-15 “Growth of ZnTe epilayers on r- and n-plane sapphire substrates”
T. Nakasu, T. Aiba, S. Yamashita, S. Hattori, T. Kizu, W.C. Sun, K. Taguri, F. Kazami, and M.Kobayashi
Jpn. Jour. Appl. Phys., vol.54, (2015) 075501-1 – 075501-5
E-15-16 “High-idex Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy”
W. Huo, J. Shi, Z. Mei, L. Liu, J. Li, L. Gu, X. Du, and Q. Xue
Jour. Cryst. Growth, vol.420, (2015) 32 – 36
E-15-17 “Epitaxial growth of tin(II) niobate with a pyrochlore structure”
S. Katayama, Y. Ogawa, H. Hayashi, F. Oba, and I. Tanaka
Jour. Cryst. Growth, vol.416, (2015) 126-129 (R-15-7)
E-15-18 “X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)”
D. Ferrah, M. El Kazzi, G. Niu, C. Botella, J. Penuelas, Y. Robach, L. Louahadj, R. Bachelet, L.Largeau, G. Saint-Girons, Q. Liu, B. Vilquin, and G. Grenet
Jour. Cryst. Growth, vol.416, (2015) 118-125 (R-15-8)
E-15-19 “Synthesis of LiCoO2 epitaxial thin films using a sol-gel method”
エピタキシャル方位解析に極点測定・In-plane測定、原料粉末分析にRint、TG-8120
T. Kwon, T. Ohnishi, K. Matsuishi, T.C. Ozawa, and K. Takada
J. Power Sources, vol.274, (2015) 417 – 423 (I-15-04)
E-15-20 “Growth of iron nitride thin films by molecular beam epitaxy”
M. naito, K. Uehara, R. Takeda, Y. Taniyasu, and H. Yamamoto
J. Cryst. Growth, vol.415, (2015) 36 – 40
E-15-21 “Synthesis, Structure, and Spectroscopy of Epitaxial EuFeO3 Thin Films”
A.K. Choquette, R. Colby, E.J. Moon, C.M. Schlepütz, M.D. Scafetta, D.J. Keavney, and S.J. May
Cryst. Growth Design, vol.15, (2015) 1105-1111 (R-15-9)
E-15-22 “Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition”
Y. Wang, R.B. Comes, S. Kittiwatanakul, S.A. Wolf, and J. Lu
J. Vac. Sic. Tech. -A, vol.33, (2015) 021516-1 - 021516-5 (R-15-10)
E-15-23 “Epitaxial growth of magnetic semiconductor EuO on silicon by molecular beam epitaxy”
D.V. Averyanov, P.E. Teterin, Y.G. Sadofyev, I.A. Likhachev, A.E. Primenko, A.M. Tokmachev, and V.G. Storchak
Cryst. Res. Technol., vol.50, (2015) 268-275
E-15-24 “Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD”
T. Malinauskas, A. Kadys, S. Stanionyté , K. Badokas, J. Mickevičius, J. Jurkevičius, D.Dobrovolskas, and G. Tamulaitis
Phys. Stat. Sol. –(b), vol.252, (2015) 1138-1141
E-15-25 “Self-modulated nanostructures in super-large-period Bi11(Fe5CoTi3)10/9O33 epitaxial thin films”
D. Meng, X. Zhai, C. Ma, H. Huang, Y. Yun, Y. Huang, Z. Fu, R. Peng, X. Mao, X. Chen, G. Brown, and Y. Lu
Appl. Phys. Lett., vol.106, (2015) 212906-1 – 212906-5
E-15-26 “Microstructure-controlled depth gradients of mechanical properties in thin nanocrystalline films:Towards structure-property gradient functionalization”
R. Daniel, A. Zeilinger, T. Schöberl, B. Sartory, C. Mitterer, and J. Keckes
Jour. Appl. Phys., vol.117, (2015) 235301-1 – 235301-12
E-15-27 “Effects of cation stoichiometry on electronic and structural properties of LaNiO3”
C.R. Smith, A.C. Lang, V. Shutthanandan, M.L. Taheri, and S.J. May
J. Vac. Sic. Tech. -A, vol.33, (2015) 041510-1 - 041510-5 (R-15-12)
E-15-28 “Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films”
Y.J. Zhang, Y.D. luo, Y.H. Lin, and C..W. Nan
(OpenAccess) AIP Advances, vol.5, (2015) 077107-1 - 077107-5
E-15-29 “Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications”
V. Pačebutas, A. Urbanowicz, P. Cicėnas, S. Stanionytė, A. Bičiūnas, I. Nevinskas and A.Krotkus
(OpenAccess) Semicond. Sci. Technol., vol.30, (2015) 094012-1 - 094012-6
E-15-30 “Semimetallic transport properties of epitaxially stabilized perovskite CaIrO3 films”
D. Hirai, J. Matsuno, D. Nishio-Hamane, and H. Takagi
Appl. Phys. Lett., vol.107, (2015) 012104-1 - 012104-5
E-15-31 “Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction”
A. Benediktovitch, A.Zhylik, T. Ulyanenkova, M. Myronov, and Alex Ulyanenkov
(OpenAccess) Jour. Appl. Cryst., vol.48, (2015) 655 - 665
E-15-32 “Ab initio simulation of diffractometer instrumental function for high-resolution X-ray diffraction”
A. Mikhalychev, A. Benediktovitch, T. Ulyanenkova, and A. Ulyanenkov
(OpenAccess) Jour. Appl. Cryst., vol.48, (2015) 679 - 689
E-15-33 “Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates”
D.S. Katzer, N. Nepal, D.J. Meyer, B.P. Downey, V.D. Wheeler, D.F. Storm, and M.T. Hardy
Appl. Phys. Express, vol.8, (2015) 085501-1 – 085501-4
E-15-34 “Electronic transport of titanate heterostructures and their potential as channels on (001) Si”
L. Kornblum, E.N. Jin, O. Shoron, M. Boucherit, S. Rajan, C.H. Ahn, and F.J. Walker
Jour. Appl. Phys., vol.118, (2015) 105301-1 – 105301-6
E-15-35 “Quasi-two-dimensional superconductivity in FeSe0.3Te0.7 thin films and electric-field modulation of superconducting transition”
Z. Lin, C. Mei, L. Wei, Z. Sun, S. Wu, H. Huang, S. Zhang, C. Liu, Y. Feng, H. Tian, H. Yang, J. Li, Y. Wang, G. Zhang, Y. Lu, and Y. Zhao
(OpenAccess) Sci. Reports, vol.5, (2015) 14133-1 – 14133-9 (I-15-06)
E-15-36 “Electronic transition above room temperature in CaMn7O12 films”
A. Huon, A.C. Lang, D. Saldana-Greco, J.S. Lim, E.J. Moon, A.M. Rappe, M.L. Taheri, and S.J. May
Appl. Phys. Lett., vol.107, (2015) 142901-1 – 142901-5 (R-15-19)
E-15-37 “Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets”
T. Inoue, H. Hiramatsu, H. Hosono, and T. Kamiya
Jour. Appl. Phys., vol.118, (2015) 205302-1 – 205301-14 (I-15-08, R-15-20)
E-15-38 “Effects of sputtering gas pressure on physical properties of ferroelectric (Bi3.25Nd0.65Eu0.10)Ti3O12 nanoplate films”
M. Kobune, T. Kuriyama, R. Furotani, T. Kugimiya, S. Ueshima, T. Kikuchi, H. Fujisawa, S.Nakashima, M. Shimizu, and N. Fukumuro
Jpn. Jour. Appl. Phys., vol.54, (2015) 10NA01-1 – 10NA01-6
E-15-39 “Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors”
S. Xiao, F. Feng, K. Shi, S. Deng, T. Qu, Y. Zhu, H. Lu, R. Huang, and Z. Han
Jour. Vac. Sci. Technol.-A, vol.33, (2015) 041504-1 – 041504-6
E-15-40 “Dynamic hysteresis and scaling behavior in epitaxial antiferroelectric film”
J. Ge, Y. Chen, X. Dong, D. Rémiens, X. Guo, F. Cao, and G. Wang
Thin Solid Films, vol.584, (2015) 108 – 111
E-15-41 “Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering”
M. Braic, N.C. Zoita, M. Danila, C.E.A. Grigorescu, C. Logofatu
Thin Solid Films, vol.589, (2015) 590 – 596
E-15-42 “Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers”
D. Jung, L. Yu, D. Wasserman, and M.L. Lee
Jour. Appl. Phys Lett., vol.118 (2015) 183101-1 – 183101-7
E-15-43 “Magnetic properties of spin frustrated spinel ZnFe2O4/ZnCr2O4 superlattices”
T. Murata, Y. Kozuka, M. Uchida, and M. Kawasaki
Jour. Appl. Phys Lett., vol.118 (2015) 193901-1 – 193901-5
E-15-44 “Lead-Free α‑La2WO6 Ferroelectric Thin Films”
T. Carlier, M.H. Chambrier, A. Ferri, S. Estradé, J.F. Blach, G. Martín, B. Meziane, F. Peiró, P.Roussel, F. Ponchel, D. Rèmiens, A. Cornet, and R. Desfeux
ACS Appl. Mater. Interfaces, vol.7 (2015) 24409 – 24418
E-15-45 “Transport at the Epitaxial Interface between Germanium and Functional Oxides”
L. Kornblum, M.D. Morales-Acosta, E.N. Jin, C.H. Ahn, and F.J. Walker
Adv. Mater. Interfaces, vol.2 (2015) 1500193-1 – 1500193-5
E-15-46 “Hints on the origin of the thermal hysteresis suppression in giant magnetocaloric thin flms irradiatied with highly charged ions”
S. Cervera, M. Trassinelli, M. Marangolo, L.B. Carlsson, M. Eddrief, V.H. Etgens, V. Gafton, S.Hidki, E. Lamour, A. Lévy, S. Macé, C. Prigent, J.-P. Rozet, S. Steydli, Y. Zheng, and D. Vernhet
(OpenAccess) J. Phys.: Conf. Ser., vol.635 (2015) 012028-1 – 0120283-7
E-15-47 “High structural quality InGaN/GaN multiple quantum well solar cells”
E. Dogmus, M. Zegaoui, L. Largeau, M. Tchernycheva, V. Neplokh, S. Weiszer, F. Schuster, M.Stutzmann, M. Foldyna, and F.Medjdoub
Phys. Stat. Sol. –(c)., vol.12, (2015) 1412-1415
E-15-48 “その場Ｘ線回折法による有機金属化合物気相成長GaInN の評価”
岩谷 素顕・竹内 哲也
42, (2015) 218-224
E-15-49 “Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface”
Y. Chen, F. Trier, T. Kasama, D.V. Christensen, N. Bovet, Z.I. Balogh, H. Li, K.T.S. Thydén, W.Zhang, S. Yazdi, P. Norby, N. Pryds, and S. Linderoth
Sci. Reports, vol.5, (2015) 18707-1 – 18707-7
E-15-50 “Competition between strain and dimensionality effects on the electronic phase transitions in NdNiO3 films”
L. Wang, S. Ju, L. You, Y. Qi, Y. Guo, P. Ren, Y. Zhou and J. Wang
(OpenAccess) Sci. Reports, vol.5, (2015) 18707-1 – 18707-7
E-15-51 “Introduction of an artificial domain wall into BiFeO3 thin film using SrTiO3 bicrystal substrate”
H. Fujisawa, S. Seto, S. Nakashima, and M. Shimizu
Jpn. Jour. Appl. Phys., vol.54, (2015) 10NA06-1 – 10NA06-5
E-15-52 “Phase-Controlled Electrochemical Activity of Epitaxial Mg-Spinel Thin Films”
Z. Feng, X. Chen, L. Qiao, A.L. Lipson, T.T. Fister, L. Zeng, C. Kim, T. Yi, N. Sa, D.L. Proffit, A. K.Burrell, J. Cabana, B.J. Ingram, M.D. Biegalski, M. Bedzyk, and P.Fenter
ACS Appl. Mater. Interfaces, vol.7 (2015) 28438-2844
E-15-53 “Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy”
M.H. Zoellner, M.-I. Richard, G.A. Chahine, P. Zaumseil, C. Reich, G. Capellini, F. Montalenti, A.Marzegalli, Y.-H. Xie, T.U. Schulli, M. Haberlen, P. Storck, and T. Schroeder
ACS Appl. Mater. Interfaces, vol.7 (2015) 9031-9037
E-15-54 “Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy”
F. Oliveira, I.A. Fischer, A. Benedetti, P. Zaumseil, M.F. Cerqueira, M.I. Vasilevskiy, S. Stefanov, S.Chiussi, and J. Schulze
Appl. Phys. Lett., vol.107 (2015) 262102-1 – 262102-5
E-15-55 “Persistent monolayer-scale chemical ordering in Si1−xGex heteroepitaxial films during surface roughening and strain relaxation”
J.M. Amatya and J.A. Floro
Jour. Appl. Phys., vol.118, (2015) 245302-1 – 245302-8 (R-15-21)
E-15-56 “Structural analysis of strained LaVO3 thin films”
H. Rotella, O. Copie, G. Steciuk, H. Ouerdane, P. Boullay, P. Roussel, M. Morales, A. David, A. Pautrat, B. Mercey, L. Lutterotti, D. Chateigner, and W. Prellier
J. Phys. Condens. Matter., vol.27, (2015) 175001-1 – 175001-9
E-15-57 “Accelerated Oxygen Exchange Kinetics on Nd2NiO4-δ Thin Films with Tensile Strain along c‑Axis”
N. Tsvetkov, Q. Lu, Y. Chen, and B. Yildiz
ACS Nano, vol.9, (2015) 1614 – 1621
E-15-58 “Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates”
F. Isa, F. Pezzoli, G. Isella, M. Meduňa, C.V. Falub, E. Müller, T. Kreiliger, A.G. Taboada, H. von Känel, and L. Miglio
Semicond. Sci. Technol., vol.30, (2015) 105001-1 – 105001-9
E-15-59 “Optical and structural properties of BGaN layers grown on different substrates”
A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas, and G. Tamulaitis
Jour. Phys.-D : Appl. Phys., vol.48, (2015) 465307-1 – 465307-6
E-15-60 “Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth”
P. Zaumseil, Y. Yamamoto, M.A. Schubert, G. Capellini, O. Skibitzki, M.H. Zoellner and T. Schroeder
Nanotchnology, vol.26, (2015) 355707-1 – 355707-10 (I-15-15)
E-15-61 “Effect of epitaxial strain on tunneling electroresistance in ferroelectric tunnel junctions”
A. Sokolov, O. Bak, H. Lu, S. Li, E.Y. Tsymbal, and A. Gruverman
Nanotechnology, vol.26, (2015) 305202-1 – 305202-7 (R-15-24)
E-15-62 “Increased magnetic moment induced by lattice expansion from a-Fe to a’-Fe8N”
I. Dirba, P. Komissinskiy, O. Gutfleisch, and L. Alff
Jour. Appl. Phys., vol.117, (2015) 173911-1 – 173911-5 (R-15-25)
E-15-63 “Atomic layer deposition of rutile and TiO2-II from TiCl4 and O3 on sapphire: Influence of substrate orientation on thin film structure”
K. Möldre, L. Aarik, H. Mändar, A. Niilisk, R. Rammula, A. Tarre, and J. Aarik
Jour. Cryst. Growth, vol.428, (2015) 86 – 92 (R-15-26)
E-15-64 “Crystallization engineering as a route to epitaxial strain control”
A.R. Akbashev, A.V. Plokhikh, D. Barbash, S.E. Lofland, and J.E. Spanier
(OpenAccess) APL Mater., vol.3, (2015) 106102-1 – 106102-6
E-15-65 “Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates”
M.T. Hardy, D.F. Storm, N. Nepal, D.S. Katzer, B.P. Downey, and D.J. Meyer
Jour. Cryst. Growth, vol.425, (2015) 119 – 124
E-15-66 “Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH”
H. Oguchi, S. Isobe, H. Kawano, S. Shiraki, S. Orimo, and T. Hitosugi
(OpenAccess) APL Mater., vol.3, (2015) 096106-1 – 096106-6
E-15-67 “Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire”
T. Nakasu, T. Aiba, S. Yamashita, S. Hattori, W. Sun, K. Taguri, F. Kazami, M. Kobayashi, and T. Asahi
Jour. Cryst. Growth, vol.425, (2015) 191 – 194
E-15-68 “Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film”
T. Shimizu, K. Katayama, T. Kiguchi, A. Akama, T.J. Konno, and H. Funakubo
Appl. Phys. Lett., vol.107, (2015) 032910-1 – 032910-5
E-15-69 “Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties”
J.A. Freitas, Jr., J.C. Culbertson, N.A. Mahadik, T. Sochacki, M. Bockowski, and M. Iwinska
Cryst. Growth, Design, vol.15, (2015) 4837 – 4842

2014年

E-14-01 “Growth of AgGaTe2 on a- and c-plane sapphire by closed-space sublimation and analysis of the orientation by pole figure measurement”
A. Uruno, A. Usui, and M. Kobayashi
Jpn. Jour. Appl. Phys., vol. 53, (2014) 015501-1 – 015501-4
E-14-02 “Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire”
T. Nakasu, M. Kobayashi, T. Asahi, and H. Togo
Jpn. Jour. Appl. Phys., vol. 53, (2014) 015502-1 – 015502-5
E-14-03 “A Facile Route for Producing Single-Crystalline Epitaxial Perovskite Oxide Thin Films”
A.R. Akbashev, G. Chen, and J.E. Spanier
NANO Lett., vol.14 (2014) 44-49 (R-14-1)
E-14-04 “Epitaxial growth of VO2 by periodic annealing”
J.W. Tashman, J.H. Lee, H. Paik, J.A. Moyer, R. Misra, J.A. Mundy, T. Spila, T.A. Merz, J. Schubert, D.A. Muller, P. Schiffer, and D.G. Schlom
Appl. Phys Lett., vol.104 (2014) 063104-1 – 063104-5
E-14-05 “Special Feature : GaN for Opto- and Powerelectronic Application (1) : General features of GaN-related materials”
K. Inaba
Rigaku Journal, vol.30 (1) (2014) 1 - 6
E-14-06 “Special Feature : GaN for Opto- and Powerelectronic Application (2) : Characterization of GaN-related materials using high-resolution XRD”
K. Inaba
Rigaku Journal, vol.30 (1) (2014) 7 – 16
E-14-07 “Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate”
Y. Hamasaki, T. Shimizu, H. Taniguchi, T. Taniyama, S. Yasui, and M. Itoh
Appl. Phys. Lett., vol.104, (2014) 082906-1 – 082906-5 (I-14-02)
E-14-08 “Multijunction GaInN-based solar cells using a tunnel junction”
H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
Appl. Phys. Express, vol.7, (2014) 034104-1 – 034104-4
E-14-09 “Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process”
S. Meng, Z. Yue, X. Zhang, and L. Li
Appl. Surf. Sci., vol.290, (2014) 340 – 345 (I-14-04)
E-14-10 “Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films”
Q. Liu, O. marconot, M. Piquemal, C. Eypert, A.S. Borowiak, N. Baboux, B. Gautier, A. Benamrouche, P. Rojo-Romeo, Y. Robach, J. Penuelas, and B. Vilquin
Thin Solid Films, vol.553, (2014) 85-88 (I-14-05, R-14-2)
E-14-11 “Microstructure and nanoscale piezoelectric/ferroelectric properties in Ln2Ti2O7 (Ln = La, Pr and Nd) oxide thin films grown by pulsed laser deposition”
A. Bayart, S. Saitzek, A. Ferri, R. Pouhet, Marie-Hélène Chambrier, P. Roussel, and R. Desfeux
Thin Solid Films, vol.553, (2014) 71-75
E-14-12 “The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure”
R. Tülek, E. Arslan, A. Bayraklı, S. Turhan, S. Gökden, Ö. Duygulu, A.A. Kaya, T. Fırat, A. Teke, and E. Özbay
Thin Solid Films, vol.551, (2014) 146-152
E-14-13 “Lattice-engineered Si1-xGex-buffer on Si(001) for GaP integration”
O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil Y. Yamamoto, M.A. Schubert, A. Trampert, B. Tillack, W.T. Masselink, T. Hannappel, and T. Schroeder
Jour. Appl. Phys., vol.115, (2014) 103501-1 – 103501-9
E-14-14 “Characteristics of MoO3 films grown by molecular beam epitaxy”
K. Koike, R. Wada, S. Yagi, Y. Harada, S. Sasa, and M. Yano
Jpn. Jour. Appl. Phys., vol.3, (2014) 05FJ02-1 – 05FJ02-4
E-14-15 “Asymmetric electroresistance of cluster glass state in manganites”
J.Lourembam, J. Ding, A. Bera, W. Lin, and T. Wu
Appl. Phys. Lett., vol.104, (2014) 133508-1 – 133508-5
E-14-16 “Epitaxial growth of Li4Ti5O12 thin films using RF magnetron sputtering”
A. Kumatani, S. Shiraki, Y. Takagai, T. Suzuki, T. Ohsawa, X. Gao, Y. Ikuhara, and T. Hitosugi
Jpn. Jour. Appl. Phys., vol.53, (2014) 058001-1 – 058001-3
E-14-17 “Solid–liquid-type solar cell based on α-Fe2O3 heterostructures for solar energy harvesting”
M. Seki, M. Takahashi, T. Ohshima, H. Yamahara, and H. Tabata
Jpn. Jour. Appl. Phys., vol.53, (2014) 05FA07-1 – 05FA07-6
E-14-18 “Double-layer fabrication of cubic-manganites/hexagonal-ZnO on various substrates by ion beam sputtering, and variable electrical property”
A. Okada, K. Uehara, M. Yokura, M. Matsui, K. Inaba, S. Kobayashi, K. Endo, N. Iwata, S. Arisawa, J. Thomas, R. John, S.L. Reddy, and T. Endo
Jpn. Jour. Appl. Phys., vol.53, (2014) 05FB107-1 – 05FB10-9
E-14-19 “DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film”
H. Huang, Z. Luo, Y. Yang, Y. Yun, M. Yang, D. Meng, H. Wang, S. Hu, J. Bao, Y. Lu, and C. Gao
(OpenAccess) AIP Advances, vol.4, (2014) 057102-1 – 057102-6
E-14-20 “Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates”
S. Tomasulo, K.N. Yaung, J. Faucher, M. Vaisman, and M.L. Lee
Appl. Phys. Lett., vol.104, (2014) 173903-1 – 173903-5
E-14-21 “Fabrication of La1−xSrxMnO3 thin films by chemical solution deposition for high-temperature resistive materials”
K. Shinoda, T. Nakajima, and T. Tsuchiya
Jour. Ceram. Soc. Jpn., vol.122, (2014) 415 – 420
E-14-22 “Substrate-dependent post-annealing effects on the strain state and electrical transport of epitaxial La5/8-yPryCa3/8MnO3 films”
S. Hu, H. Huang, Y. Yang, Z. Luo, M. Yang, H. Wang, Y. Dong, B. Hong, H. He, J. Bao, and C. Gao
(OpenAccess) AIP Advances, vol.4, (2014) 067109-1 – 067109-6 (R-14-6)
E-14-23 “Electronic transport and conduction mechanism transition in La1/3Sr2/3FeO3 thin films”
R.C. Devlin, A.L. Krick, R.J. Sichel-Tissot, Y.J. Xie, and S.J. May
Jour. Appl. Phys., vol.115, (2014) 233704-1 – 233704-8 (R-14-7)
E-14-24 “Structural properties and phase formation of epitaxial PbVO3 thin films grown on LaAlO3(001) by pulsed laser deposition”
S.H. Oh, H.J. Jin, H.Y. Shin, R.H. Shin, S. Yoon, Y.S. Seo, J.S. Ahn, and W. Jo
J. Phys. D: Appl. Phys., vol.47, (2014) 245302-1 – 245302-5
E-14-25 “Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, β-BaZn2As2”
Z. Xiao, F.Y. Ran, H. Hiramatsu, S. Matsuishi, H. Hosono, and T. Kamiya
Thin Solid Films, vol.559, (2014) 100-104 (I-14-06)
E-14-26 “Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrate”
P. Zaumseil, Y. Yamamoto, M.A. Schubert, T. Schroeder, and B. Tillack
Thin Solid Films, vol.557, (2014) 50-54 (I-14-08)
E-14-27 “Estimation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO3 film using an insulator-metal composite model for terahertz conductivity”
T.V.A. Nguyen, A.N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, and H. Tanaka
Appl. Phys. Lett., vol.105, (2014) 023502-1 – 023502-4
E-14-28 “Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films”
S.Y. Smolin, M.D. Scafetta, G.W. Guglietta, J.B. Baxter, and S.J. May
Appl. Phys Lett., vol.105, (2014) 022103-1 – 022103-5 (R-14-9)
E-14-29 “Structural evolution and enhanced piezoresponse in cobalt-substituted BiFeO3 thin films”
H. Hojo, K. Onuma, Y. Ikuhara, and M. Azuma
Appl. Phys Express, vol.7, (2014) 091501-1 – 091501-4
E-14-30 “X-ray analysis of strain distribution in two-step grown epitaxial SrTiO3 thin films”
G. Panomsuwan, O. Takai, and N. Saito
Appl. Phys. Lett., vol.105, (2014) 051911-1 – 051911-4 (I-14-09)
E-14-31 “Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts”
A. Szyszka, L. Lupina, G. Lupina, M.A. Schubert, P. Zaumseil, M. Haeberlen, P. Storck, S. B. Thapa, and T. Schroeder
Jour. Appl. Phys., vol.116, (2014) 083108-1 – 083108-9
E-14-32 “Effects of deposition temperature on characteristics of ferroelectric Sr2Bi4Ti5O18 nanoplates fabricated by RF sputtering”
M. Kobune, S. Ueshima, Y. Kaneko, T. Kugimiya, T. Kuriyama, T. Kikuchi, H. Fujisawa, S. Nakashima, M. Shimizu, N. Fukumuro, and H. Matsuda
Jpn. Jour. Appl. Phys., vol.53, (2014) 09PA02-1 – 09PA02-5
E-14-33 “Origin of superstructures in (double) perovskite thin films”
V. Shabadi, M. Major, P. Komissinskiy, M. Vafaee, A. Radetinac, M.B Yazdi, W. Donner, and L. Alff
Jour. Appl. Phys., vol.116, (2014) 114901-1 – 114901-8 (I-14-10)
E-14-34 “Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering”
J. Ge, D. Remiens, X. Dong, Y. Chen, J. Costecalde, F. Gao, F. Cao, and G. Wang
Appl. Phys. Lett., vol.105, (2014) 112908-1 – 112908-5
E-14-35 “Highly conducting SrMoO3 thin films for microwave applications”
A. Radetinac, A Mani, S. Melnyk, M. Nikfalazar, J. Ziegler, Y. Zheng, R. Jakoby, L. Alff, and P. Komissinskiy
Appl. Phys. Lett., vol.105, (2014) 114108-1 – 114108-5
E-14-36 “Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors”
Y. Ashuach, E. Lakin, C. Saguy, Y. Kaufmann, and E. Zolotoyabko
Jour. Appl. Phys., vol.116, (2014) 124315-1 – 124315-7
E-14-37 “Growth and surface properties of epitaxial SnO2”
K. Rachut, C. Körber, J. Brötz, and A. Klein
Phys. Stat. Solidi -A., vol.211, (2014) 1997-2004
E-14-38 “Origin of the 2.45eV luminescence band observed in ZnO epitaxial layers grown on c-plane sapphire by chemical vapour deposition”
R. K. Saroj and S. Dhar
Mater. Res. Express, vol.1, (2014) 045904-1 – 045904-13
E-14-39 “The role of Pd over layer thickness on PLD YBCO coated conductor properties”
A. Mancini, F. Rizzo, A. Rufoloni, F. Fabbri, A. Augieri, A. Vannozzi, G. Thalmaier, T. Petrisor, A.A. Armenio, V. Galluzzi, and G. Celentano
Jour. Phys.:Conf. Series, vol.507, (2014) 022018-1 - 022018-4
E-14-40 “Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices”
M. Meduňa, C.V. Falub, F. Isa, D. Chrastina, T. Kreiliger, G. Isellad, and H. Känel
Jour. Appl. Cryst., vol.47, (2014) 2030-2037
E-14-41 “Epitaxial thin film growth of LiH using a liquid-Li atomic template”
H. Oguchi, T. Ikeshoji, T. Ohsawa, S. Shiraki, H. Kuwano, S. Orimo, and T. Hitosugi
Appl. Phys. Lett., vol.105, (2014) 211601-1 -211601-5
E-14-42 “Structural and optical properties of AgAlTe2 layers grown on sapphire substrates by closed space sublimation method”
A. Uruno, A. Usui, and M. Kobayashi
Jour. Appl. Phys., vol.116, (2014) 183504-1 – 183504-4
E-14-43 “Exchange bias in strained SrRuO3 thin films”
C. Sow, A.K. Pramanik, and P.S. Anil Kumar
Jour. Appl. Phys., vol.116, (2014) 194310-1 – 194310-5
E-14-44 “Controlled crystalline orientation of SrTiO3 thin films grown on Pt(111)/Ti/α-Al2O3(0001) substrates:Effect of growth temperature and Ti layer thickness”
G. Panomsuwan, O. Takai, and N. Saito
Appl. Surf. Sci., vol.309, (2014) 95-105
E-14-45 “Effect of growth temperature on structural and morphological evolution of epitaxial SrTiO3 thin films grown on LaAlO3 (001) substrates by ion beam sputter deposition”
G. Panomsuwan, O. Takai, and N. Saito
Vacuum, vol.109, (2014) 175-179
E-14-46 “Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy”
L. Mazet, R. Bachelet, L. Louahadj, D. Albertini, B. Gautier, R. Cours, S. Schamm-Chardon, G. Saint-Girons, and C. Dubourdieu
Jour. Appl. Phys., vol.116, (2014) 214102-1 – 214102-9 (R-14-10)
E-14-47 “Highly spin-polarized current in Co-substituted Fe3O4 epitaxial thin films at room temperature”
M. Takahashi, T. Ohshima, H. Yamahara, M. Seki, and H. Tabata
Jour. Appl. Phys., vol.116, (2014) 213907-1 – 213907-5
E-14-48 “Ｘ線回折法における2次元検出器の活用 –HyPix-3000 を用いた様々な試料の解析-”
大渕 敦司
リガクジャーナル, vol.45(2), (2014) 1-6 (M-14-42)
E-14-49 “Patterning of epitaxial VO2 microstructures by a high temperature lift-off process”
T. Yamin, T. Havdala, and A. Sharoni
Mater. Res. Express, vol.1, (2014) 046302-1 – 046302-10
E-14-50 “Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy”
T. Nakasu, S. Yamashita, T. Aiba, S. Hattori, W. Sun, K. Taguri, F. Kazami, and M. Kobayashi
Jour. Appl. Phys., vol.116, (2014) 163518-1 – 1635182-7
E-14-51 “Two-Dimensional Mott Insulators in SrVO3 Ultrathin Films”
M. Gu, S.A. Wolf, and J. Lu
Adv. Mat. Interfaces, vol.1, (2014) 1300126-1 – 1300126-6 (R-14-11)
E-14-52 “Study of the Structural Quality of Heteroepitaxial Silicon-on-Sapphire Structures by High-Resolution X-Ray Diffraction, X-Ray Reflectivity, and Electron Microscopy”
A.E. Blagov, A.L. Vasiliev, A.S. Golubeva, I.A. Ivanov, O.A. Kondratev, Yu.V. Pisarevsky, M. Yu. Presnyakov, P.A. Prosekov, and A.Yu. Seregin
Crystallography Reports, vol.59, (2014) 315 – 322 (R-14-12)
E-14-53 “Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays”
B. Kim, S.W. Kim, H. Jang, J.H. Kim, S. Koo, D.H. Kim, B.G. Min, and D.H. Ko
Thin Solid Films, vol.557, (2014) 55 – 60
E-14-54 “Strain evolution and morphological transition of magnetron-sputtered CeO2 thin films induced by deposition parameters”
Y. Zhang, F. Feng, H. Rongxia, K. Shi, S. Xiao, W. Wua, T. Qu, X. Wang, and Z. Han
Curr. Appl. Phys., vol.14, (2014) 275 – 281
E-14-55 “Growth of highly textured SnS on mica using an SnSe buffer layer”
S.F. Wang,W.K. Fong, W. Wang, and C. Surya
Thin Solid Films, vol.564, (2014) 206 – 212
E-14-56 “Structural transition in Ge growth on Si mediated by sub-monolayer carbon”
Y. Itoh, S. Hatakeyama, and K. Washio
Thin Solid Films, vol.557, (2014) 61 – 65 (I-14-13 )
E-14-57 “Crystal orientation of epitaxial LiCoO2 films grown on SrTiO3 substrates”
K. Nishio, T. Ohnishi, K. Akatsuka, and K. Takada
J. Power Sources, vol.247, (2014) 687 – 691 (I-14-14, R-14-14)
E-14-58 “A high density two-dimensional electron gas in an oxide heterostructure on Si (001)”
E.N. Jin, L. Kornblum, D.P. Kumah, K. Zou, C.C. Broadbridge, J.H. Ngai, C.H. Ahn, and F.J. Walker
(OpenAccess) APL Mater., vol.2, (2014) 116109-1 – 116109-6
E-14-59 “An Epitaxial Ferroelectric Tunnel Junction on Silicon”
Z. Li, X. Guo, H.B. Lu, Z. Zhang, D. Song, S. Cheng, M. Bosman, J. Zhu, Z. Dong, and W. Zhu
Adv. Mater., vol.26, (2014) 7185 – 7189
E-14-60 “Control of Functional Responses Via Reversible Oxygen Loss in La1- xSrxFeO3- δ Films”
Y. Xie, M.D. Scafetta, R.J. Sichel-Tissot, E.J. Moon, R.C. Devlin, H. Wu, A.L. Krick, and S.J. May
Adv. Mater., vol.26, (2014) 1434 – 1438 (R-14-15)
E-14-61 “X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films”
L.J. Collins-McIntyre, M.D. Watson, A.A. Baker, S.L. Zhang, A.I. Coldea, S.E. Harrison, A. Pushp, A.J. Kellock, S.S. P. Parkin, G. van der Laan, and T. Hesjedal
(OpenAccess) AIP Advances, vol.4, (2014) 127136-1 – 127136-11 (R-14-16)
E-14-62 “Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon”
G. Niu, E. Hildebrandt, M.A. Schubert, F. Boscherini, M.H. Zoellner, L. Alff, D. Walczyk, P. Zaumseil, I. Costina, H. Wilkens, and T. Schroeder
ACS Appl. Mater. Interfaces, vol.6, (2014) 17496 – 17505 (R-14-17)

2013年

E-13-01 “Structural Modification and Domain Structure in a BaTiO3 Film on (110) SrTiO3”
T. Shimizu, D. Suwama, H. Taniguchi, T. Taniyama, and M. Itoh
Appl. Phys. Express, vol. 6, (2013) 015803-1 – 015803-4
E-13-02 “Magnetic field effects during deposition on crystal structure and magnetic properties of BaFe12O19 thin films prepared using PLD in the magnetic field (Dynamic aurora PLD)”
D. Suzuki, N. Sakamoto, K. Shinozuka, H. Suzuki, and N. Wakiya
Jour. Ceram. Soc. Jpn., vol. 121, (2013) 45 – 48
E-13-03 “Electrical properties of K0.5Na0.5NbO3 thin films grown on Nb:SrTiO3 single-crystalline substrates with different crystallographic orientations”
Q. Yu, J.F. Li, W. Sun, Z. Zhou, Y. Xu, Z.K. Xie, F.P. Lai, and Q.M. Wang
Jour. Appl. Phys., vol. 113, (2013) 024101-1 – 024101-5
E-13-04 “Raman scattering of magnetoelectric gallium ferrite thin films”
A. Thomasson, J. Kreisel, C. Lefèvre, F. Roulland, G. Versini, S. Barre and N. Viart
J. Phys.: Condens. Matter.., vol. 25, (2013) 045401-1 – 045401-6
E-13-05 “Lattice-matched epitaxial ternary PrxY2−xO3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring”
G. Niu, P. Zaumseil, M.A. Schubert, M. H. Zoellner, J. Dabrowski, and T. Schroeder
Appl. Phys. Lett., vol. 102, (2013) 011906-1 – 011906-5
E-13-06 “Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition”
R. Comes, M. Gu, M. Khokhlov, H. Liu, J. Lu, and S.A. Wolf
Jour. Appl. Phys., vol. 113, (2013) 023303-1 – 023303-7
E-13-07 “Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach”
G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, C. Wenger, G. Niu, P. Zaumseil, B. Tillack, A.Ghrib, M. de Kersauson, M. El Kurdi, P. Boucaud, and T. Schroeder
Jour. Appl. Phys., vol. 113, (2013) 013513-1 – 013513-6
E-13-08 “X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2−xO3 (x=0–2) films on Si (111)”
G. Niu, M.H. Zoellner, P. Zaumseil, A. Pouliopoulos, F. d’Acapito, T. Schroeder, and F. Boscherinir
Jour. Appl. Phys., vol. 113, (2013) 043504-1 – 043504-6
E-13-09 “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures”
S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake
Appl. Phys. Lett., vol. 102, (2013) 032107-1 – 032107-4
E-13-10 “Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate”
P. Ren, S.K. Cho, P. Liu, L. You, X. Zou, B. Wang, J. Wang, and L. Wang
(OpenAccess) AIP Advances, vol. 3, (2013) 012110-1 – 012110-6
E-13-11 “Significant ferrimagnetisms observed in superlattice composed of antiferromagnetic LaFeO3 and YMnO3”
Y.B. Chen, J. Zhou, S.T. Zhang, F.X. Wu, S.H. Yao, Z.B. Gu, D. Wu, and Y.F. Chen
Appl. Phys. Lett., vol. 102, (2013) 042403-1 – 042403-5
E-13-12 “Strain engineering in epitaxial La1−xSr1+xMnO4 thin films”
Y.M. Vafaee, M.B. Yazdi, A. Radetinac, G. Cherkashinin, P. Komissinskiy, and L. Alff
Jour. Appl. Phys., vol. 113, (2013) 053906-1 – 053906-4
E-13-13 “Comparative study of phase transitions in BaTiO3 thin films grown on (001)- and (110)-oriented SrTiO3 substrate”
T. Shimizu, D. Suwama, H. Taniguchi, T. Taniyama and M. Itoh
J. Phys.: Condens. Matter., vol.25, (2013) 132001-1 – 132001-5 (I-13-01)
E-13-14 “Atomic layer deposition of epitaxial TiO2 II on c-sapphire”
A. Tarre, K. Möldre, A. Niilisk, H. Mändar, J. Aarik, and A. Rosental
Jour. Vac. Sci. Technol. A, vol.31, (2013) 01A1181-1 – 01A118-5
E-13-15 “CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC”
J. Hwang, M. Kim, V.B.Shields, and M.G. Spencer
Jour. Cryst. Growth, vol.366, (2013) 26 – 30
E-13-16 “Ba2NaNb5O15 thin film formed by electron cyclotron resonance plasma sputtering”
A. Watazu and H. Masumoto
Jour. Phys. :Conf. Series, vol.417, (2013) 012066-1 – 012066-5
E-13-17 “Optical absorption in epitaxial La1−xSrxFeO3 thin films”
M.D. Scafetta, Y.J. Xie, M. Torres, J.E. Spanier, and S.J. May
Appl. Phys. Lett., vol.102, (2013) 081904-1 – 081904-5
E-13-18 “Structural modifications of GaN after cerium implantation”
A. Majid, J. Zhu, N.al Hassan and A. Shakoor
Jour. Raman Spectrosc., vol.44 (2013) 136 – 141
E-13-19 “Ferroelectric-domain-controlled magnetic anisotropy in Co40Fe40B20/YMnO3 multiferroic heterostructure”
J.W. Wang, Y.G. Zhao, C. Fan, X.F. Sun, S. Rizwan et al.
Appl. Phys. Lett., vol.102, (2013) 102906-1 – 102906-5
E-13-20 “Recovery of the chemical ordering in L10 MnAl epitaxial thin films irradiated by 2 MeV protons”
N. Anuniwat, Y. Cui, S.A. Wolf, J. Lu, and B.D. Weaver
Appl. Phys. Lett., vol.102, (2013) 102406-1 – 102406-4
E-13-21 “Zr/Mg multilayer mirror for extreme ultraviolet application and its thermal stability”
H. Li, J. Zhu, S. Zhou, Z. Wang, H. Chen, P. Jonnard, K.L. Guen, and J.M. André
Appl. Phys. Lett., vol.102, (2013) 111103-1 – 111103-4
E-13-22 “Measurement of Anisotropic Biaxial Stresses in Si1-xGex/Si Mesa Structures by Oil-Immersion Raman Spectroscopy”
D. Kosemura, M. Tomita, K. Usuda, T. Tezuka, and A. Ogura
Jpn. Jour. Appl. Phys., vol.52, (2013) 04CA05-1 – 04CA05-5
E-13-23 “High-speed growth of YBa2Cu3O7-δ superconducting films on multilayercoated Hastelloy C276 tape by laser-assisted MOCVD”
P. Zhao, A. Ito, T. Kato, D. Yokoe, T. Hirayama, and T. Goto
Supercond. Sci. Technol., vol.26 (2013) 055020-1 – 055020-8
E-13-24 “Improved ionic conductivity in strained yttria-stabilized zirconia thin films”
J. Jiang, X. Hu, W. Shen, C. Ni, and J.L. Hertz
Appl. Phys. Lett., vol.102 (2013) 143901-1 – 143901-4
E-13-25 “Metal-insulator transition induced in CaVO3 thin films”
M. Gu, J. Laverock, B. Chen, K.E. Smith, S.A. Wolf, and J. Lu
Jour. Appl. Phys., vol.113 (2013) 133704-1 – 133704-5
E-13-26 “Electric field-induced magnetic changes in La0.7Sr0.3MnO3 thin film using electric field-induced resistance phenomenon”
T. Yokota, S. Murata, and M. Gomi
Appl. Phys. Lett., vol.102 (2013) 152404-1 – 152404-3
E-13-27 “Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE”
K. Pantzas, Y.El Gmili, J. Dickerson, S. Gautier, L. largeau, O. Mauguin, G. Patriarche, S. Suresh, T.Moudakir, C. Bishop, A. Ahaitouf, T. Rivera, C. Tanguy, P.L. Voss, and A. Ougazzaden
Jour. Cryst. Growth, vol.370 (2013) 57 – 62 (I-13-02)
E-13-28 “Anomalous exchange bias at collinear/noncollinear spin interface”
Y.F. Tian, J.F. Ding, W.N. Lin, Z.H. Chen, A. David, M. He, W.J. Hu, L. Chen and T. Wu
(OpenAccess) Sci. Reports, vol.3 (2013) 01094-4 – 01094-4
E-13-29 “The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 < x < 0.14)”
B. Sarikavak-Lisesivdin, S.B. Lisesivdin, and E. Ozbay
Curr. Appl. Phys., vol.13 (2013) 224 - 227
E-13-30 “Influence of Oxygen to Argon Ratio on the Structural and Morphological Properties of Nb-Doped SrTiO3 Epitaxial Films Grown by Reactive Ion Beam Sputter Deposition”
G. Panomsuwan1, and N. Saito
Crystal Str. Theory Appl., vol.2 (2013) 34 - 38 (I-13-04, R-13-6)
E-13-31 “Microstructural investigations and nanoscale ferroelectric properties in lead-free Nd2Ti2O7 thin films grown on SrTiO3 substrates by pulsed laser deposition”
A. Bayart, S. Saitzek, M.H. Chambrier, Z.M. Shao, A. Ferri, M. Huvé, R. Pouhet, A. Tebano, P.Rousse and R. Desfeux
Cryst. Eng. Comm., vol.15 (2013) 4341 - 4350
E-13-32 “Fabrication of ZnF2 thin films and their vacuum ultraviolet transparency”
I. Suzuki, T. Omata, Y. Shiratsuchi, R. Nakatani, N. Kitamura, S. Otsuka-Yao-Matsuo
Thin Solid Films, vol.534 (2013) 508 - 514
E-13-33 “Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate”
A. Wierzbicka, Z.R. Zytkiewicz, S. Kret, J. Borysiuk, P. Dluzewski, M. Sobanska, K. Klosek, A. Reszka, G. Tchutchulashvili, A. Cabaj and E. Lusakowska
Nanotechnology, vol.24 (2013) 035703-1 - 035703-7
E-13-34 “Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method”
H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara
Jpn. Jour. Appl. Phys., vol.52 (2013) 08JE17-1 - 08JE17-4
E-13-35 “Epitaxial growth of γ-CoV2O6 thin films: Structure, morphology, and magnetic properties”
M. Lenertz, S. Colis, C. Ulhaq-Bouillet, and A. Dinia
Appl. Phys. Lett., vol.102 (2013) 212407-1 - 212407-4
E-13-36 “Room temperature multiferroicity in Ga0.6Fe1.4O3:Mg thin films”
A. Thomasson, S. Cherifi, C. Lefevre, F. Roulland, B. Gautier, D. Albertini, C. Meny, and N. Viart
Jour. Appl. Phys., vol.113 (2013) 214101-1 - 214101-4
E-13-37 “Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon”
A. Talneau, C. Roblin1 A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes, G. Patriarche, C. Pang, and H. Benisty
Appl. Phys. Lett., vol.102 (2013) 212101-1 - 212101-4 (I-13-05)
E-13-38 “Unstrained Epitaxial Zn-Substituted Fe3O4 Films for Ferromagnetic Field-Effect Transistors”
T. Ichimura, K. Fujiwara, T. Kushizaki, T. Kanki, and H. Tanaka
Jpn. Jour. Appl. Phys., vol.52 (2013) 068002-1 - 068002-3 (I-13-06)
E-13-39 “Competition between (001) and (111) MgO thin film growth on Al-doped ZnO by oxygen plasma assisted pulsed laser deposition”
B. Xiao, Q. Yang, B. Walker, C.A. Gonder, G.C. Romain, R. Mundle, M. Bahoura, and A.K. Pradhan
Jour. Appl. Phys., vol.113 (2013) 214102-1 - 214102-6
E-13-40 “The effects of surface treatments of the substrates on high-quality GaN crystal growth”
T. Fujimori, M. Maruyama, M. Honjo, H. Takazawa, K. Murakami, H. Imabayashi, Y. Todoroki, D. Matsuo, M. Imade, M. Yoshimura, and Y. Mori
Jour. Cryst. Growth, vol.372 (2013) 73 - 77
E-13-41 “Labyrinth-type domain structure of heteroepitaxial SrMnO2.5 film”
S. Kobayashi, Y. Ikuhara, and T. Yamamoto
Appl. Phys. Lett., vol.102 (2013) 231911-1 - 23911-5
E-13-42 “Exchange bias in La0.7Sr0.3MnO3/NiO and LaMnO3/NiO interfaces”
X.K. Ning, Z.J. Wang, X. G. Zhao, C. W. Shih, and Z.D. Zhang
Jour. Appl. Phys., vol.113 (2013) 223903-1 - 223903-5
E-13-43 “Effect of a substrate-induced microstructure on the optical properties of the insulator-metal transition temperature in VO2 thin films”
E. Radue, E. Crisman, L. Wang, S. Kittiwatanakul, J. Lu, S.A. Wolf, R. Wincheski, R.A. Lukaszew, and I. Novikova
Jour. Appl. Phys., vol.113 (2013) 233104-1 - 233104-6
E-13-44 “Ultrafast transverse thermoelectric response in c-axis inclined epitaxial La0.5Sr0.5CoO3 thin films”
L. Yu, Y. Wang, P. Zhang, and H.U. Habermeier
Phys. Stat. Solid., -Rapid Res. Lett.., vol.7 (2013) 180 - 183
E-13-45 “Magnetotransport Properties across Verwey Transition in Fe3O4(111) Epitaxial Thin Films”
K. Matsuzaki, H Hosono, and T. Susaki
Appl. Phys. Express, vol.6, (2013) 073009-1 - 073009-4 (I-13-20)
E-13-46 “Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures”
A. Zhylik, A. Benediktovitch, I. Feranchuk, K. Inaba, A. Mikhalycheva and A. Ulyanenkov
Jour. Appl. Cryst., vol.46, (2013) 919 - 925 (I-13-21)
E-13-47 “Fabrication and characterization of epitaxial SrTiO3/Nb-doped SrTiO3 superlattices by double ECR ion beam sputter deposition”
G. Panomsuwan, O. Takai, and N. Saito
Vacuum, vol.89, (2013) 35 - 39 (I-13-22)
E-13-48 “Search for superconductivity in LaNiP2 (P = Bi, Sb) thin films grown by reactive molecular beam epitaxy”
J. Kurian, A. Buckow, R. Retzlaff, and L. Alff
Physica C, vol.484, (2013) 171 - 174 (R-13-10)
E-13-49 “Structural, magnetic, and nanoscale switching properties of BiFeO3 thin films grown by pulsed electron deposition”
H. Liu, R. Comes, Y. Pei, J. Lu, and S.A. Wolf
Jour. Vac. Sci. Technol. B, vol.31, (2013) 032801-1- 032801-4
E-13-50 “X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates”
P. Zaumseil, G. Kozlowski, Y. Yamamoto, M.A. Schubert and T. Schroeder
Jour. Appl. Cryst., vol.46, (2013) 868 - 873 (I-13-23)
E-13-51 “Characterization of SiGe thin films using a laboratory X-ray instrument”
T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov
Jour. Appl. Cryst., vol.46, (2013) 898 - 902 (R-13-11)
E-13-52 “Critical Temperature Programs for Surface Carbonization of Si(111) and Their Effects on 3C-SiC Film Growth”
N.G. Nguyen, C.S. Liu, M.S. Hu, and L.S. Hong
Jpn. Jour. Appl. Phys., vol.52, (2013) 085502-1 - 085502-4
E-13-53 “Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy”
N. Bhargava, M. Coppinger, J.P. Gupta, L. Wielunski, and J. Kolodzey
Jour. Appl. Phys., vol.103, (2013) 041908-1 - 041908-4
E-13-54 “Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B”
A. Davydok, T. Rieger, A. Biermanns, M. Saqib, T. Grap, M.I. Lepsa and U. Pietsch
Jour. Appl. Cryst., vol.46, (2013) 893 - 897
E-13-55 “Ferromagnetism and ferroelectricity in epitaxial BiMnO3 ultra-thin films”
G.M. De Luca, D. Preziosi, F. Chiarella, R. Di Capua, S. Gariglio, S. Lettieri, and M. Salluzzo
Appl. Phys. Lett., vol.103, (2013) 062902-1 - 062902-4
E-13-56 “On the role of Fe in the growth of single crystalline heteroepitaxial Au thin films on sapphire”
D. Amra, and E. Rabkin
Acta. Mater., vol.61, (2013) 4113 - 4126 (R-13-15)
E-13-57 “High-Jc YBa2Cu3O7-δ superconducting film grown by laser-assisted chemical vapor deposition using a single liquid source and its microstructure”
P. Zhao, A. Ito, T.Kato, D. Yokoe, T. Hirayama, and T. Goto
Supercond. Sci. Technol., vol.26, (2013) 095016-1 - 095016-5
E-13-58 “Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy”
N. Nepal, S.B. Qadri, J.K. Hite, N.A. Mahadik, M.A. Mastro, and C.R. Eddy, Jr.
Appl. Phys. Lett., vol.103, (2013) 082110-1 - 082110-5
E-13-59 “Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers”
M. de Kersauson, M. Prost, A. Ghrib, M. El Kurdi, S. Sauvage, G. Beaudoin, L. Largeau, O. Mauguin, R. Jakomin, I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski, and P. Boucaud
Jour. Appl. Phys., vol.113, (2013) 183508-1 - 183508-7
E-13-60 “Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure”
S. Kittiwatanakul, J. Laverock, D. Newby, Jr., K.E. Smith, S.A. Wolf, and J. Lu
Jour. Appl. Phys., vol.114, (2013) 053703-1 - 053703-5 (I-13-28, R-13-16)
E-13-61 “Semibulk InGaN:A novel approach for thick, single phase,epitaxial InGaN layers grown by MOVPE”
K. Pantzas, Y.E. Gmili, J. Dickerson, S. Gautier, L. Largeau, O. Mauguin, G. Patriarche, S. Suresh, T. Moudakir, C. Bishop, A. Ahaitouf, T. Rivera, C. Tanguy, P.L. Voss, and A. Ougazzaden
Jour. Cryst. Growth, vol.370, (2013) 57 - 62 (I-13-29)
E-13-62 “Charge-spin-coupled electrical transport properties in EuMoO3/SrTiO3 superlattices”
T.C. Fujita, Y. Kozuka, H. Seki, and M. Kawasaki
Phys. Rev. B, vol.87, (2013) 205402-1 - 205402-8
E-13-63 “Preparation of a spinel LiMn2O4 single crystal film from a MnO wafer”
M. Kitta, T. Akita, and M. Kohyama
Jour. Power Sources, vol.232, (2013) 7 - 11
E-13-64 “Comparison of GaAsP solar cells on GaP and GaP/Si”
J.R. Lang, J. Faucher, S. Tomasulo, K.N. Yaung, and M L. Lee
Appl. Phys. Lett., vol.103, (2013) 092102-1 - 092101-5
E-13-65 “Epitaxial growth of (111)-oriented BaTiO3/SrTiO3 perovskite superlattices on Pt(111)/Ti/Al2O3(0001) substrates”
G. Panomsuwan, O. Takai, and N. Saito
Appl. Phys. Lett., vol.103, (2013) 112902-1 - 112902-4 (I-13-30)
E-13-66 “Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111) substrate”
H. Toyota, A. Okabe, T. Endoh, Y. Jinbo, and N. Uchitomi
Jour. Cryst. Growth, vol.378, (2013) 129-133
E-13-67 “Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)”
Y.F. Lee, E. Wu, R. Kumar, F. Hunte, J. Schwartz, and J. Narayan
Appl. Phys. Lett., vol.103, (2013) 112101-1 - 112101-4
E-13-68 “Oxygen-Vacancy-Induced Antiferromagnetism to Ferromagnetism Transformation in Eu0.5Ba0.5TiO3-δ Multiferroic Thin Films”
W. Li, R. Zhao, L. Wang, R. Tang, Y. Zhu, J.H. lee, H. Cao, T. cai, H. Guo, C. Wang, L. Ling, L. Pi, K. Jin, Y. Zhang, H. Wang, Y. Wang, S. Ju, and H. Yang
(OpenAccess) Sci. Reports, vol.3, (2013) 02618-1 - 02618-6
E-13-69 “光エレクトロニクス・パワーデバイス特集① GaN 材料系の評価技法について”
稲葉 克彦
リガクジャーナル, vol.44(2), (2013) 2 - 6
E-13-70 “光エレクトロニクス・パワーデバイス特集② 高分解能Ｘ線回折法によるGaN 材料の評価”
稲葉 克彦
リガクジャーナル, vol.44(2), (2013) 7 - 15
E-13-71 “ハイスループット＆高分解能Ｘ線トポグラフィイメージングシステム XRTmicron”
製品紹介
リガクジャーナル, vol.44(2), (2013) 44 - 46
E-13-72 “高速1 次元検出器 D/teX Ultra 250”
製品紹介
リガクジャーナル, vol.44(2), (2013) 47 - 50
E-13-73 “The effects of La substitution on ferroelectric domain structure and multiferroic properties of epitaxially grown BiFeO3 thin films”
W.H. Kim and J.Y. Son
Appl. Phys. Lett., vol.103, (2013) 132907-1 - 132907-4
E-13-74 “Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantumwell light-emitting diodes with varying barrier layer thickness”
L.C. Le, D.G. Zhao, D.S. Jiang, L. Li, L.L. Wu, P. Chen, Z.S. Liu, J. Yang, X..J. Li, X.G. He, J.J. Zhu, H. Wang, S.M. Zhang, and H. Yang
Jour. Appl. Phys., vol.114, (2013) 143706-1 - 143706-5
E-13-75 “Effect of Oxygen Pressure on Electrical Properties of BiFe0.9Co0.1O3 Thin Films Prepared by Pulsed Laser Deposition”
H. Hojo, K. Onuma, Y. Ikuhara, and M. Azuma
(OpenAccess) Jpn. Jour. Appl. Phys., vol.52, (2013) 09KD09-1 - 09KD09-3
E-13-76 “Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy”
S. Stoughton, M. Showak, Q. Mao, P. Koirala, D.A. Hillsberry, S. Sallis, L.F. Kourkoutis, K. Nguyen, L.F.J. Piper, D.A. Tenne, N.J. Podraza, D.A. Muller, C. Adamo, and D.G. Schlom
(OpenAccess) APL Materials, vol.1, (2013) 042112-1 - 042112-8
E-13-77 “Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations”
J. Ge, D. Remiens, J. Costecalde, Y. Chen, X. Dong, and G. Wang
Appl. Phys. Lett., vol.103, (2013) 162903-1 - 162903-4
E-13-78 “Insulator-metal transition of VO2 ultrathin films on silicon: evidence for an electronic origin by infrared spectroscopy”
W.W. Peng, G. Niu, R. Tétot, B. Vilquin, F. Raimondi, J.B. Brubach, E. Amzallag, T. Yanagida, S. Autier-Laurent, P. Lecoeur and P. Roy
Jour. Phys.: Condens. Matter., vol.25, (2013) 445402-1 - 445402-7 (R-13-19)
E-13-79 “Phase transformations in Au(Fe) nano- and microparticles obtained by solid state dewetting of thin Au-Fe bilayer films”
D. Amram, L. Klinger, and E. Rabkin
Acta Materialia, vol.61, (2013) 5130- 5143
E-13-80 “High Resolution X-Ray Diffraction Analyses of (La,Sr)MnO3/ZnO/Sapphire (0001) Double Heteroepitaxial Films”
K. Inaba, S. Kobayashi, K. Uehara, A. Okada, S.L. Reddy, and T. Endo
(OpenAccess) Adv. Mater. Phys. Chem., vol.3, (2013) 72 - 89 (I-13-33)
E-13-81 “Large thickness-dependent improvement of crystallographic texture of CVD silicon films on R-sapphire”
M. Moyzykh, S. Samoilenkov, V. Amelichev, A. Vasiliev, and A. Kaul
Jour. Cryst. Growth, vol.383, (2013) 145-150
E-13-82 “Surface morphology evolution of CeO2/YSZ (001) buffer layers fabricated via magnetron sputtering”
Y. Zhang, F. Feng,, K. Shi, H. Lu, S. Xiao, W. Wu, R. Huang, T. Qu, X. Wang, Z. Wang, and Z. Han
Appl. Surf. Sci., vol.284, (2013) 150-154
E-13-83 “Strain modulated optical properties in BiFeO3 thin films”
H.L. Liu, M.K. Lin, Y.R. Cai, C.K. Tung, and Y.H. Chu
Appl. Phys. Lett., vol.103, (2013) 181907-1 - 181907-4
E-13-84 “Exchange bias and magneto-resistance in an all-oxide spin valve with multi-ferroic BiFeO3 as the pinning layer”
W.J. Lin, W.C. Chang, and X. Qi
Acta Materialia, vol.61, (2013) 7444 - 7453
E-13-85 “Microstructural features and orientation correlations of non-modulated martensite in Ni-Mn-Ga epitaxial thin films”
B. Yang, Z.B. Li, Y.D. Zhang, G.W. Qin, C. Esling, O. Perroud, X. Zhao, and L. Zuo
Acta Materialia, vol.61, (2013) 6809 - 6820
E-13-86 “Role of epitaxial microstructure, stress and twin boundaries in the metal–insulator transition mechanism in VO2/Al2O3 heterostructures”
X. Li, A. Gloter, H. Gu, X. Caoa, P. Jin, and C. Colliex
Acta Materialia, vol.61, (2013) 6443 - 6452
E-13-87 “The reduction and oxidation of Fe2O3(0001) surface investigated by scanning tunneling microscopy”
Y. Tang, H. Qin, K. Wu, Q. Guo, and J. Guo
Surf. Sci., vol.609, (2013) 67 - 72
E-13-88 “Perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5/MgO bottom electrodes for magnetic tunnel junctions”
X.Q. Li, Y. Wu, S. Gao, X.G. Xu, J. Miao, and Y. Jiang
Thin Solid Films, vol.545, (2013) 503 - 508
E-13-89 “Raman and X-ray diffraction study of (Ba,Sr)TiO3/(Bi,Nd)FeO3 multilayer heterostructures”
A.S. Anokhin, O.A. Bunina, Y.I. Golovko, V.M. Mukhortov, Y.I. Yuzyuk, and P. Simon
Thin Solid Films, vol.545, (2013) 267 - 271
E-13-90 “Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations”
J. Ge, D. Remiens, J. Costecalde, Y. Chen, X. Dong, and G. Wang
Appl. Phys. Lett., vol.103, (2013) 162903-1 - 162903-4
E-13-91 “Single-junction GaAsP solar cells grown on SiGe graded buffers on Si”
J. Faucher, A. Gerger, S. Tomasulo, C. Ebert, A. Lochtefeld, A. Barnett, and M.L. Lee
Appl. Phys. Lett., vol.103, (2013) 191901-1 - 191901-4
E-13-92 “Bipolar resistive switching in BiFe0.95Zn0.05O3 films”
X.Y. Yuan, L.R. Luo, D. Wu, and Q.Y. Xu
Chin. Phys. B, vol.22, (2013) 107702-1 - 107702-6
E-13-93 “Properties of zinc oxide films grown on sapphire substrates using high-temperature H2O generated by a catalytic reaction on platinum nanoparticles”
K. Yasui, T. Takeuchi, E. Nagatomi, S. Satomoto, H. Miura, T. Kato and T. Konya
Jour. Vac. Sci. Technol., vol.32, (2013) 021502-1 - 021502-5
E-13-94 “Strain induced microstructural and ordering behaviors of epitaxial Fe38.5Pd61.5 films grown by pulsed laser deposition – Review Article”
M.A. Steiner, R.B. Comes, J.A. Floro, W.A. Soffa, J.M. Fitz-Gerald, and V.S. Smentkowski
Jour. Vac. Sci. Technol.,-A, vol.31, (2013) 050824-1 - 050824-13 (R-13-20)
E-13-95 “Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates”
S.D. Lee, K. Akaiwa, and S. Fujita
Phys. Stat. Solid.-C, vol.10, (2013) 1592 - 1595
E-13-96 “Deposition of AgGaTe2 on sapphire substrates by closed space sublimation”
A. Urano, A. Usui, and M. Kobayashi
Phys. Stat. Solid.-C, vol.10, (2013) 1389 – 1392
E-13-97 “(211) oriented ZnTe growth on m-plane sapphire by MBE”
T. Nakasu, M. Kobayashi, H. Togo, and T. Asahi
Phys. Stat. Solid.-C, vol.10, (2013) 1381 – 1384
E-13-98 “Epitaxial growth and control of the sodium content in NaxCoO2 thin films”
S. Hildebrand, P. Komissinskiy, M. Major, W. Donner, and L. Alff
Thin Solid Films, vol.545, (2013) 291 - 295
E-13-99 “Femtosecond Laser Etching of GaN and InGaN Thin Films by Metal Organic Chemical Vapor Deposition”
M. Ščiuka, T. Grinys, M. Dmukauskas, V. Plerpaite, and A. Melninkaitis
Jpn. Jour. Appl. Phys., vol.52, (2013) 08JK08-1 - 08JK08-4
E-13-100 “High spin polarization at room temperature in Ge-substituted Fe3O4 epitaxial thin film grown under high oxygen pressure”
M. Seki, M. Takahashi, T. Ohshima, H. Yamahara, and H. Tabata
Appl. Phys. Lett., vol.103, (2013) 212404-1 - 212404-4
E-13-101 “Temperature-Dependent Reduction of Epitaxial Ce1−xPrxO2−δ (x = 0−1) Thin Films on Si(111): A Combined Temperature-Programmed Desorption, X-ray Diffraction, X-ray Photoelectron Spectroscopy, and Raman Study”
M.H. Zoellner, G. Niu, J.H. Jhang, A. Schaefer, P. Zaumseil, M. Báúmer, and T. Schroeder
Jour. Phys. Chem. -C, vol.117, (2013) 24851 - 24857
E-13-102 “Metal-insulator transition in SrTi1-xVxO3 thin films”
M. Gu, S.A. Wolf, and J. Lu
Appl. Phys. Lett., vol.103, (2013) 223110-1 - 223110-5 (R-13-23)
E-13-103 “Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors”
P. Ruterana, M.P. Chauvat, and K. Lorenz
Jpn. Jour. Appl. Phys., vol.52, (2013) 11NH02-1 - 11NH02-6
E-13-104 “Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment”
R. Molaei, R. Bayati, S. Nori, D. Kumar, J.T. Prater, and J. Narayan
Appl. Phys. Lett., vol.103, (2013) 252109-1 - 252109-4
E-13-105 “光照射電着法のよるｎ型窒化ガリウム上の酸化亜鉛の厚膜成長”
宇野 和行・池上 潤平・妻神 光輝・田中 一郎
材料 vol.62 (2013) 668-671
E-13-106 “High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering”
D.K. Hwang, K.P. Kim, and D.H. Kim
Thin Solid Films, vol.546 (2013) 18 - 21
E-13-107 “Growth of highly (110)- and (111)-textured SrTiO3 thin filmson Pt(111)/α-Al2O3(0001) substrates by ECR ion beam sputter deposition”
G. Panomsuwan, O. Takai, and N. Saito
Solid State Commun., vol.158, (2013) 65 – 69 (I-13-39)
E-13-108 “Epitaxial films of Heusler compound Co2FeAl0.5Si0.5 with high crystalline quality grown by off-axis sputtering”
B. Peters, A. Alfonsov, C.G.F. Blum, S.J. Hageman, P.M. Woodward, S. Wurmehl, B. Büchner, and F. Y. Yang
Appl. Phys. Lett., vol.103, (2013) 162404-1 – 162404-5
E-13-109 “Controlled epitaxial integration of polar ZnO(0001) with Si(001)”
R. Molaei, M.R. Bayati, H.M. Alipour, and J. Narayan
Appl. Phys. Lett., vol.103, (2013) 101602-1 – 101602-4

2012年

E-12-01 “Anisotropic magnetoresistance and weak spin-orbit coupling in doped ZnO thin films”
Y. Tian, W. Lin, T. Wu
Appl. Phys. Lett., vol. 100, (2012) 052408-1 - 052408-4
E-12-02 “Atomic structure of a Σ3[110]/(111) grain boundary in CeO2”
B. Feng, H. Hojo, T. Mizoguchi, H. Ohta, S.D. Findlay, Y. Sato, N. Shibata, T. Yamamoto, and Y. Ikuhara
Appl. Phys. Lett., vol. 100, (2012) 073109-1 - 073109-3
E-12-03 “Self-Assembled Growth of Spinel (Fe,Zn)3O4-Perovskite BiFeO3 Nanocomposite Structures Using Pulsed Laser Deposition”
T. Sakamoto, A.N. Hattori, T. Kanki, K. Hattori, H. Daimon, H. Akinaga, and H. Tanaka
Jpn. Jour. Appl. Phys., vol.51, (2012) 035504-1 - 035504-4
E-12-04 “Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostrructure by Oil-Immersion Raman Spectroscopy”
D. Kosemura, M. Tomita, K. Usuda, and A. Ogura
Jpn. Jour. Appl. Phys., vol.51, (2012) 02BA03-1 - 02BA03-7 (I-12-02)
E-12-05 “Growth of ZnMgTe/ZnTe Waveguide Structures and Analysis of the Light Polarization with the Electric Field”
Y. Kumagai and M. Kobayashi
Jpn. Jour. Appl. Phys., vol.51, (2012) 02BH06-1 - 02BH06-3
E-12-06 “Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vaport Deposition”
T. Kawaharamura, G.T. Dang, and M. Furuta
Jpn. Jour. Appl. Phys., vol.51, (2012) 040207-1 - 040207-3
E-12-07 “Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films”
H. Kim, M. Osofsky, R.C. Auyeung, and A. Piqué
Appl. Phys. Lett., vol.100, (2012) 142403-1 - 142403-4
E-12-08 “High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain”
G. Capellini, M.De Seta, P. Zaumseil, G. Kozlowski, and T. Schroeder
Jour. Appl. Phys. Lett., vol.111, (2012) 073518-1 - 073518-6
E-12-09 “Femtosecond electron diffraction: Preparation and characterization of (110)-oriented bismuth films”
G. Mariena, M. Hada, G. Sciaini, J. Matsuo, and R.J.Dwayne Miller
Jour. Appl. Phys. Lett., vol.111, (2012) 043504-1 - 043504-4
E-12-10 “Anisotropic Thermoelectric Properties of MnSiγ Film Prepared on R-Sapphire”
K. Takeda, Y. Kikuchi, K. Hayashi, Y. Miyazaki, and T. Kajitani
Appl. Phys. Express, vol.5, (2012) 055501-1 - 055501-3
E-12-11 “Influence of growth temperature on the twin formation of InN {1013} on GaAs(110) by metalorganic vapor phase epitaxy”
H. Murakami, H.C. Cho, M. Suematsu, K. Inaba, Y. Kumagai, and A. Koukitu
Phys. Stat. Solidi -C, vol.9, (2012) 67-- 680
E-12-12 “Lithium-ion conducting La2/3-xLi3xTiO3 solid electrolyte thin films with stepped and terraced surfaces”
H. Ohta, T. Mizoguchi, N. Aoki, T. Yamamoto, A. Sabarudin, and T. Umemura
Appl. Phys. Lett., vol.100, (2012) 173107-1 - 173107-4 (I-12-03)
E-12-13 “GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study”
O. Skibitzki, F. Hatami, Y. Yamamoto, P. Zaumseil, A. Trampert, M.A. Schubert, B. Tillack, W.T. Masselink, and T. Schroeder
Jour. Appl. Phys., vol.111, (2012) 073515-1 - 073515-9
E-12-14 “Room-temperature ferromagnetism in epitaxial Mg-doped SnO2 thin films”
P. Wu, B. Zhou, and W. Zhou
Appl. Phys. Lett., vol.100, (2012) 182405-1 - 182405-4
E-12-15 “Low threading dislocation Ge on Si by combining deposition and etching”
Y. Yamamoto, G. Kozlowski, P. Zaumseil, and B. Tillack
Thin Solid Films, vol.520, (2012) 3216 - 3221
E-12-16 “Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate”
P. Zaumseil, Y. Yamamoto, J. Bauer, M.A. Schubert, J. Matejova, G. Kozlowski, T. Schroeder, and B. Tillack
Thin Solid Films, vol.520, (2012) 3240 - 3244
E-12-17 “Reduced leakage currents and possible charge carriers tuing in Mg-doped Ga0.6Fe1.4O3 thin films”
C. Lefevre, R.H. Shin, J.H. Lee, S.H. Oh, F. Roulland, A. Thomasson, E. Autissier, C. Meny, W. Jo, and N. Viart
Appl. Phys. Lett., vol.100, (2012) 262904-1 - 262904-4
E-12-18 “Design and preparation of stress-free epitaxial BaTiO3 polydomain films by RF magnetron sputtering”
W. Zhang, M. Yuan, X. Wang, W. Pan, C.M. Wang, and J. Ouyang
Sci. Technol. Adv. Mater, vol.13, (2012) 035006-1 – 035006-6
E-12-19 “Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation”
P. Gupta, T. Dutta, S. Mal, and J. Narayan
Jour. Appl. Phys., vol.111, (2012) 013706-1 - 013706-7
E-12-20 “Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation”
T. Inoue and S. Shida
Thin Solid Films, vol.520, (2012) 6179 - 6182
E-12-21 “Fabrication of fully epitaxial ZnO/Fe3O4 heterostructures on conductive LaNiO3”
P. Li, M.Y. Sun, and H.L. Bai
Thin Solid Films, vol.520, (2012) 5971 - 5976
E-12-22 “Epitaxial Integration of (100) Bi4Ti3O12 with (0001) ZnO through Long-Range Lattice Matching”
S. Luo, C. Wang, S. Zhang, R. Tu, S. Liu, X. Tang, Q. Shen, F. Chen, and L. Zhang
Appl. Phys. Expresss, vol.5, (2012) 085801-1 - 085801-3
E-12-23 “Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al2O3 Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy”
S.K. Han, D.C. Oh, J.H. Song, K. Inaba, T. Yao, and S.K. Hong
Appl. Phys. Express, vol.5, (2012) 081101-1 - 081101-3 (I-12-09)
E-12-24 “Domain epitaxy in TiO2/α-Al2O3 thin film heterostructures with Ti2O3 transition layer”
M.R. Bayati, R. Molaei, R.J. narayan, J. narayan, H. Zhou, and S.J. Pennycook
Appl. Phys. Lett., vol.100, (2012) 251606-1 - 251606-3
E-12-25 “Shift of morphotropic phase boundary in high-performance [111]-oriented epitaxial Pb(Zr,Ti)O3 thin films”
Q. Yu, J.F. Li, Z.X. Zhu, Y. Xu, and Q.M. Wang
Jour. Appl. Phys., vol.112, (2012) 014102-1 - 014102-5
E-12-26 “Electric and magnetic propeties of La0.67Sr0.33MnO3 thin films with a metal-insulator crossover behavior”
Y.H. Sun, Y.G. Zhao, M.H. Zhu, B.T. Xie, and W.B. Wu
Jour. Appl. Phys., vol.112, (2012) 023908-1 - 023908-5
E-12-27 “Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga0.6Fe1.4O3 thin films”
C. Lefevre, R.H. Shin, J.H. Lee, S.H. Oh, F. Roulland, A. Thomasson, E. Autisseir, C. Meny, W. Jo, and N. Viart
Appl. Phys. Lett., vol.100, (2012) 262904-1 - 262904-4
E-12-28 “Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O3 thin film on Si(001) for micro-electromehanical systems”
S. Yin, G. Niu, B. Vilquin, B. Gautier, G.Le Rhun, E. Defay, and Y. Robach
Thin Solid Films, vol.520, (2012) 4572 - 4575
E-12-29 “Molecular beam epitaxy growth of BaTiO3 thin films and crucial impact of oxygen content conditions on the electrical characteristics”
G. Niu, B. Aautierm S. Yin, G. Saint-Girons, P. Lecoeur, V. Pillard, G. Hollinger, and B. Vilquin
Thin Solid Films, vol.520, (2012) 4595 - 4599 (R-12-3)
E-12-30 “Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates”
A.S. Borowiak, G. Niu, V. Pillard, G. Agnus, Ph. Lecoeur, D. Albertini, N. Baboux, B. Gautier, and B. Vilquin
Thin Solid Films, vol.520, (2012) 4604 - 4607
E-12-31 “Photoluminescence investigation of GaAs1-xBix/GaAs heterostrutures”
V. Pačebutas, R. Butkute, B. Čechavičius, J. Kavaliauskas, A. Krotkus
Thin Solid Films, vol.520, (2012) 6415 - 6418
E-12-32 “Effect of the nanostructure on room temperature ferromagnetism and resistivity of undoped ZnO thin films grown by chemical vapor deposition”
L.I. Burova, N.S. Perov, A.S. Semisalova, V.A. Kulbachinskii, V.G. Kytin, V.V. Roddatis, A.L. Vasiliev, and A.R. Kaul
Thin Solid Films, vol.520, (2012) 4580 - 4585
E-12-33 “Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain”
A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zeilinski, T. Chassagne, and M. Portail
Phys. Stat. Solid. -C, vol.9, (2012) 175 - 178 (I-12-11)
E-12-34 “X-ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates”
M. Kobayashi, Y. Kumagai, T. Baba, and S. Imada
Phys. Stat. Solid. -C, vol.9, (2012) 1 - 4
E-12-35 “Stacking behavior of twin-free type-B oriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems”
M.H. Zoellner, J. Dabrowski, P. Zaumseil, A. Giussani, M.A. Schubert, G. Lupina, H. Wilkens, J. Wollschäger, M. Reichling, M. Bäumer, and T. Schroeder
Phys. Rev.-B, vol.85, (2012) 035302-1 – 035302-9
E-12-36 “Heteroepitaxy of SrTiO3 thin films on Si (001) using different growth strategies: Toward substratelike quality”
G. Niu, B. Vilquin, J. Penuelas, C. Botella, G. Hollinger, and G. Saint-Girons
J. Vac. Sci. Technol. B, vol.29 (2012) 041207-1 - 041207-5
E-12-37 “Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation”
J. Buschbeck, J. Kawasaki, T.E. Buehl, A.C. Gossard, and C.J. Palmstrøm
J. Vac. Sci. Technol. B, vol.29 (2012) 03C116-1 - 03C116-5
E-12-38 “Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - A case study for lattice mismatched semicondunctor integration on Si(001)”
P. Zaumseil, G. Kozlowski, Y. Yamamoto, J. Bauer, M.A. Schubert, T.U. Schulli, B. Tillack, and T. Schroeder
Jour. Appl. Phys., vol.112 (2012) 043506-1 - 043506-5
E-12-39 “Molecular Beam Epitaxy Growth of ZnTe Epilayers on c-Plane Sapphire”
T. Nakasu, Y. Kumagai, K. Nishimura, M. Kobayashi, H. Togo, and T. Asahi
Appl. Phys. Express, vol.5 (2012) 095502-1 - 095502-3
E-12-40 “Growth and characterization of Ba(Cd1/3Ta2/3)O3 thin films”
L.T. Liu, C. Kopas, R.K. Singh, R.M. Hanley, and N. Newman
Thin Solid Films, vol.520 (2012) 6153 - 6157
E-12-41 “Epitaxial growth of Ni films sputter-deposited on a GaAs(001) surface covered with a MgO film”
K. Makihara, S. Maruyama, Y. Zota, M. Hashimoto, and J. Shi
Thin Solid Films, vol.520 (2012) 6831 - 6835
E-12-42 “Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature”
Q. Qi, W.Z. Zhang, L.Q. Shi, W.Y. Zhang, W. Zhang, and B. Zhang
Thin Solid Films, vol.520 (2012) 6882 - 6887
E-12-43 “Precise calibration of Mg concentration in MgxZn1-xO thin films grown on ZnO substrates”
Y. Kozuka, J. Falson Y. Segawa, T. Makino, A. Tsukagoshi, and M. Kawasaki
Jour. Appl. Phys., vol.112 (2012) 043515-1 - 043515-5
E-12-44 “Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As”
S. Mehari, A. Gavrilov, S. Cohen, P. Shekhter, M. Eizenberg, and D. Ritter
Appl. Phys. Lett., vol.101 (2012) 072103-1 - 072103-4
E-12-45 “Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface”
M. Ding and S.J. Poon
Appl. Phys. Lett., vol.101 (2012) 122408-1 - 122408-4
E-12-46 “In-plane dielectric properties of epitaxial Ba0.7Sr0.3TiO3 thin films grown on GaAs for tunable device application”
Z. Yang and J. Hao
Appl. Phys. Lett., vol.101 (2012) 054110-1 - 054110-4
E-12-47 “Conduction mechanisms of epitaxial EuTiO3 thin films”
R. Zhao, W. W. Li, L. Chen, Q. Q. Meng, J. Yang, H. Wang, Y. Q. Wang3 R. J. Tang, and H. Yang
Appl. Phys. Lett., vol.101 (2012) 102901-1 - 102901-4
E-12-48 “Laser beam scanning microscope and piezoresponse force microscope studies on domain structured in 001-, 110-, and 111-oriented NaNbO3 films”
S. Yamazoe, A. Kohori, H. Sakurai, Y. Kitanaka, Y. Noguchi, M. Miyayama, and T. Wada
Jour. Appl. Phys., vol.112 (2012) 052007-1 - 052007-6
E-12-49 “Strain-induced reversible and irreversible magnetization switching in Fe/BaTiO3 heterostructures”
G. Venkataiah, Y. Shirahata, I. Suzuki, M. Itoh, and T. Taniyama
Jour. Appl. Phys., vol.111 (2012) 033921-1 - 033921-5
E-12-50 “The effect of interfaces on magnetic activation volumes in single crystal Co2FeSi Heusler alloy thin films”
J. Sagar, H. Sukegawa, L. Lari, V. K. Lazarov1 S. Mitani, K. O’Grady, and A. Hirohata
Appl. Phys. Lett., vol.101 (2012) 102410-1 - 102410-4
E-12-51 “Effect of light Si-doping on the near-band-edge emissions in high quality GaN”
L. C. Le, D.G. Zhao, D.S. Jiang, L.L. Wu, L. Li, P. Chen, Z.S. Liu, J.J. Zhu, H. Wang, S.M. Zhang, and H. Yang
Jour. Appl. Phys., vol.112 (2012) 0531040-1 - 053104-4
E-12-52 “Mechanisms of damage formation in Eu-implanted AlN”
S. Leclerc, B. Lacroix, A. Declémy, K. Lorenz, and P. Ruterana
Jour. Appl. Phys., vol.112 (2012) 073525-1 - 073525-6
E-12-53 “Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift”
M.De Seta G. Capellini, M. Ortolani, M. Virgilio, G. Grosso, G. Nicotra and P. Zaumseil
Nanotechnology, vol.23 (2012) 465708-1 - 465708-8
E-12-54 “Superconducting epitaxial thin films of CeNixBi2 with a bismuth square net structure”
A. Buckow, K. Kupka, R.r Retzlaff, J. Kurian, and L. Alff
Appl. Phys. Lett., vol.101 (2012) 162602-1 - 162602-4
E-12-55 “Magnetic proximity effect in Pr0.5Ca0.5MnO3/La0.7Sr0.3MnO3 bilayered films”
V.G. Prokhorov, G.G. Kaminsky, V.S. Flis, J.M. Kim, T.W. Eom, J.S. Park, Y.P. Lee, and V.L. Svetchnikov
Low Temp. Phys., vol.38 (2012) 41 - 48
E-12-56 “Fabrication of epitaxial zirconia and ceria thin films with arbitrary dopant and host atom composition”
J. Jiang ,, W. Shen, and J.L. Hertz
Thin Solid Films, vol.522 (2012) 66 - 70
E-12-57 “Tunable bandgap and ferromagnetism in sputtered epitaxial Sn1-xMgxO2 thin films”
B. Zhou, P. Wu, and W. Zhou
Appl. Phys. Lett., vol.101 (2012) 182406-1 - 182406-5
E-12-58 “Orientation control of textured SrTiO3 thin films on platinized α-Al2O3 (0001) by an ion beam sputter deposition method”
G. Panomsuwan, O. Takai, and N. Saito
J. Phys. D: Appl. Phys., vol.45 (2012) 494003-1 - 494003-7 (I-12-16)
E-12-59 “Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 ℃”
M. Labrune, X. Bril, G. Patriarche, L. Largeau, O. Maugui, and P. Roca i Cabarrocas
EPJ Photovoltaics., vol.3 (2012) 30303-1 - 30303-5 (I-12-17)
E-12-60 “Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon”
K. Naji, H. Dumont, G. Saint-Girons, J. Penuelas, G. Patriarch, M. Hocevar, V. Zwiller, M. Gendry
Jour. Cryst. Growth, vol.343 (2012) 101 – 104
E-12-61 “Structural and magnetic properties of perpendicular L10-FePt/[Co/Pt]N exchange coupled composite films”
H.H. Guo, J.L. Liao, B. Ma, Z.Z. Zhang, Q.Y. Jin, H. Wang, and J.P. Wan
Thin Solid Films, vol.522 (2012) 372 - 375
E-12-62 “Magnetic and electric properties of Ru-substituted CoFe2O4 thin films fabricated by pulsed laser deposition”
F. Iwamoto, M.i Seki, and H. Tabata
Jour. Appl. Phys., vol.112 (2012) 103901-1 - 103901-5 (I-12-18)
E-12-63 “Reconstruction of the polar interface between hexagonal LuFeO3 and intergrown Fe3O4 nanolayers”
A.R. Akbashev, V.V. Roddatis, A.L. Vasiliev, S. Lopatin, V.A. Amelichev, and R. Kaul
(OpenAccess) Sci. Reports, vol.2 (2012) 672-1 - 672-4 (I-12-19)
E-12-64 “Mechanism of Growth of Cr2O3 Thin Films on (1102 ), (1120 ), and ( 0001 ) Surfaces of Sapphire Substrates by Direct Current–Radio Frequency Magnetron Sputtering”
N. Iwata, T. Kuroda, and H. Yamamoto
Jpn. Jour. Appl. Phys., vol.51 (2012) 11PG12-1 - 11PG12-9
E-12-65 “Hetero-epitaxial Growth of Cubic La(Sr)MnO3 on Hexagonal ZnO, In-Plane Orientations of La(Sr)MnO3 (001), (110), and (111) Phases”
K. Uehara, A. Okada, A. Okamoto, M.Yokura, S.L. Reddy, S. Kobayashi, K. Inaba, N. Iwata, R. Philip, H. Kezuka, M. Matsui, and T. Endo
Jpn. Jour. Appl. Phys., vol.51 (2012) 11PG07-1 - 11PG07-6 (I-12-20)
E-12-66 “ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications”
M. Zhong, Y. Sato, M. Kurniawa1, A. Apostoluk, B. Masenelli, E. Maeda, Y. Ikuhara and J.J. Delaunay
Nanotechnology, vol.23 (2012) 045602-1 - 045602-10
E-12-67 “High Sensitivity Uncooled InAsSb Photoconductors with Long Wavelength”
Yu Zhu Gao
(OpenAccess) Chapter 5, p.101-114 in “Photodetectors” Dr. Sanka Gateva (Ed.), published by InTech (2012)
E-12-68 “Neon and Manganese Ion Implantation into AlInN”
Abdul Majid
(OpenAccess) Chapter 10, p.203-236 in “Ion Implantation” Prof. Mark Goorsky (Ed.), published by InTech
E-12-69 “A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and SelectiveWet Etching”
V. Ivantsov and A. Volkova
ISRN Cond. Mat. Phys., vol.2012 (2012) 184023-1 - 184023-6
E-12-70 “Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy”
D. Kosemura, K. Usuda, and A. Ogura
Appl. Phys. Express, vol.5 (2012) 111301-1 - 111301-6
E-12-71 “Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor”
S. Toyoda, T. Shinohara, H. Kumigashira, M. Oshima, and Y. Kato
Appl. Phys. Lett., vol.101 (2012) 231607-1 – 231607-4
E-12-72 “Site preference of cation vacancies in Mn-doped Ga2O3 with defective spinel structure”
H. Hayashi, R. Huang, F. Oba, T. Hirayama, and I. Tanaka
Appl. Phys. Lett., vol.101 (2012) 241906-1 - 241906-4
E-12-73 “Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors”
M.K. Yakes, S.B. Qadri, N.A. Mahadik, C. Yi, D. Lubyshev, J.M. Fastenau, A.W.K. Liu, and E.H. Aifer
Appl. Phys. Lett., vol.101 (2012) 241908-1 - 241908-4
E-12-74 “Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films”
S. Mal, S. Nori, S. Mula, J. Narayan, and J.T. Prater
Jour. Appl. Phys., vol.112 (2012) 113917-1 - 113917-6
E-12-75 “Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes”
L.C. Le, D.G. Zhao, D.S. Jiang, L. Li, L.L. Wu, P. Chen, Z.S. Liu, Z. C. Li, Y.M. Fan, J.J. Zhu, H. Wang, S.M. Zhang, and H. Yang
Appl. Phys. Lett., vol.101 (2012) 252110-1 - 252110-4
E-12-76 “Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy”
D. Kosemura, M. Tomita, K. Usuda and A. Ogura
(OpenAccess) Chapter 9, p.247-278 in “Advanced Aspects of Spectroscopy” Prof. Muhammad Akhyar Farrukh (Ed.), published by InTech (2012)
E-12-77 “Fabrication of single crystalline EuO thin film with SrO buffer layer on SrTiO3 substrate”
H. Miyazaki, H. Momiyama, T. Hajiri, T. Ito, K. Imura, M. Matsunami and S. Kimura
(OpenAccess) Jour. Phy.:Conf. Series, vol.391 (2012) 012047-1 - 012047-4
E-12-78 “Out-of-Plane and In-Plane Crystalline Orientations of Oxide Heterostructures of LSMO/ZnO”
K. Uehara, S.L. Reddy, A. Okada, M.Yokura, S. Kobayashi, K. Inaba, T. Nakajima, T. Tsuchiya, K. Endo, and T. Endo
Mater. Res. Soc. Symp. Proc., vol.1454 (2012) 69 - 174 (I-12-21)
E-12-79 “Lattice relaxation of ZnS grown on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy”
K. Ichino, A. Nishigaki, and A. Yamauchi
Phys. Stat. Solid. -C, vol.9 (2012) 1744 - 1747
E-12-80 “Stoichiometry–structure correlation of epitaxial Ce1-xPrxO2-δ (x=0-1) thin films on Si (111)”
M.H. Zoellner, P. Zaumseil, H. Wilkens, S. Gevers, J. Wollschläger, M. Bäumer, Y.H. Xie, G. Niu, T. Schroeder
Jour. Cryst. Growth, vol.355 (2012) 159 - 165
E-12-81 “Atomically smooth and single crystalline indium tin oxide thin film with low optical loss”
R. Yasuhara, S. Murai, K. Fujita , and K. Tanaka
Phys. Status Solidi C, vol.9 (2012) 2533 - 2536
E-12-82 “Effect of oxygen partial pressure and Fe doping on growth and properties of metallic and insulating molybdenum oxide thin films”
S. Tiwari, R. Master, R.J. Choudhary, D.M. Phase, and B.L. Ahuja
Jour. Appl. Phys., vol.111, (2012) 083905-1 - 083905-6
E-12-83 “Molecular beam epitaxy of CoxFe4-xN (0.4T. Sanai, K. Ito, K. Toko, and T. Suemasu
Jour. Cryst. Growth, vol.357, (2012) 53 - 57 (I-12-23)
E-12-84 “Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet”
Y. Kozuka, H. Seki, T.C. Fujita, S. Chakravetry, K. Yoshimatsu, H. Kumigashira, M. Oshima, M.S. Bahramy, R. Arita, and M. Kawasaki
Chem. Mater., vol.24, (2012) 3746 - 3750
E-12-85 “Stoichiometry–structure correlation of epitaxial Ce1-xPrxO2-δ (x=0-1) thin films on Si(111)”
M.H. Zoellner, P. Zaumseil, H. Wilkens, S. Gevers, J. Wollschläger, M. Bäumer, Y.H. Xie, G. Niu, T. Schroeder
Jour. Cryst. Growth, vol.355, (2012) 159 - 165
E-12-86 “Suppression of mixed-phase areas in highly elongated BiFeO3 thin films on NdAlO3 substrates”
C.S. Woo, J.H. Lee, K. Chu, B.K. Jang, Y.B. Kim, T.Y. Koo, P. Yang, Y. Qi, Z. Chen, L. Chen, H.C. Choi, J.H. Shim, and C.H. Yang
Phys. Rev. B, vol.86, (2012) 054417-1 - 054417-8
E-12-87 “Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin films using planar electrodes”
Z. Chen, X. Zou, W. Ren, L. You. C. Huang, Y. Yang, P. Yang, J. Wang, T. Sritharan, L. Bellaiche, and L. Chen
Phys. Rev. B, vol.86, (2012) 235125-1 – 235125-7
E-12-88 “Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films”
T. Katase, S. Iimura, H. Hiramatsu, T. Kamiya, and H. Hosono
Phys. Rev. B, vol.85, (2012) 140516-1 - 140516-4
E-12-89 “X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates”
V.S. Kopp, V.M. Kaganer, G. Capellini, M.De Seta, and P. Zaumseil
Phys. Rev. B, vol.85, (2012) 245311-1 - 245311-9
E-12-90 “X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC”
R. Tanum, D. Mori, I. Kamata, and H. Tsuchida
Appl. Phys. Express, vol. 5, (2012) 061301-1 - 061301-93
E-12-91 “Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy”
R. Comes, M. Gu, M. Khokhlov, J. Lu, and S.A. Wolf
Jour. Magn. Magn. Mater., vol. 324, (2012) 524 - 527
E-12-92 “Synthesis and orientation control of Li-ion conducting epitaxial Li0.33La0.56TiO3 solid electrolyte thin films by pulsed laser deposition”
T. Ohnishi and K. Takada
Solid State Ionics, vol.228 (2012) 80 – 82 (I-12-26)
E-12-93 “Structural and Thermal Properties of Single Crystalline Epitaxial Gd2O3 and Er2O3 Grown on Si(111)”
R. Dargis, D. Williams, R. Smith, E. Arkun, R. Roucka, A. Clark, and M. Lebby
ECS Jour. Solid State Sci. Technol., vol. 1, (2012) N24 – N28

2011年

E-11-01 “X-ray characterization of Ge epitaxially grown on nanostructured Si(001)”
P. Zaumseil, Y. Yamamoto, A. Bauer, M.A. Schubert, and T. Schroeder
Jour. Appl. Phys., vol. 109, (2011) 023511-1 . 023511-8
E-11-02 “The effect of substitution of Fe with Cr on the giant magnetoresistance of current-perpendicular-to-plane spin valves with Co2FeSi Heusler alloy”
H. S. Goripati, T. Furubayashi, S. V. Karthik, T. M. Nakatani Y. K. Takahashi, and K. Hono
Jour. Appl. Phys., vol.109, (2011) 043901-1 . 043901-6
E-11-03 “High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition”
R. Jakomin, M. de Kersauson, M. El Kurdi, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, R.
Ossikovski, G. Ndong, M. Chaigneau, I. Sagnes, and P. Boucaud
Appl. Phys. Lett., vol.98, (2011) 091901-1 . 091901-3
E-11-04 “Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si (001) substrates”
C. Merckling, G. Saint-Girons, C. Botella, G. Hollinger, M. Heyns, J. Dekoster, and M. Caymax
Appl. Phys. Lett., vol.98 (2011) 092901-1 . 092901-3 (I-11-02)
E-11-05 “Influence of compressive strain on oxygen distribution in La0.7Ba0.3MnO3 thin films”
B. Li, L. Yang, J.Z. Tian, X.P. Wang, H. Zhu, and T. Endo
Jour. Appl. Phys., vol.109 (2011) 073922-1 . 073922-5
E-11-06 “Molecular beam epitaxy of ferromagnetic γ’-Fe4N thin films on LaAlO3(100), SrTiO3(100) and MgO(100) substrates”
K. Ito, G.H. Lee, H. Akinaga, and T. Suemasu
Jour. Cryst. Growth, vol.322 (2011) 63 . 68
E-11-07 “Epitaxial Growth and Characterization of Rocksalt ZnO Thin Films with Low-Level NiO Alloying”
S. Katayama, H. Hayashi, F. Oba, and I. Tanaka
Jpn. Jour. Appl. Phys., vol.50 (2011) 075503-1 . 075503-5 (R-11-3)
E-11-08 “Thickness-dependent magnetism and spin-glass behaviors in compressively strained BiFeO3 thin films”
C.J. Cheng, C. Lu, Z. Chen, L. You, L. Chen, J. Wang, and T. Wu
Appl. Phys. Lett., vol.98 (2011) 242502-1 . 242502-3
E-11-09 “Transport Anisotropy of Epitaxial VO2 Films near the Metal-Semiconductor Transition”
S. Kittiwatanakul, J. Lu amd S.A. Wolf
Appl. Phys. Express, vol.4 (2011) 091104-1 . 091104-3 (I-11-04)
E-11-10 “Tuning of Surface Roughness and Lattice Constant in MgO(111)/Al2O3(0001) Grown by Laser Energy Controlled Pulsed Laser Deposition”
S. Kumada, K. Matsuzaki, H. Hosono, and T. Susaki
Jpn. Jour. Appl. Phys., vol.50 (2011) 085503-1 . 085503-5 (I-11-05, R-11-4)
E-11-11 “Evaluation of the interface of thin GaN layers on c- and m-plane ZnO substrates by Rutherford backscattering”
Y. Izawa, T. Oga, T. Ida, K. Kuriyama, A. Hashimoto, H. Kotake, and T. Kamijoh
Appl. Phys. Lett., vol.99 (2011) 021909-1 . 021909-3
E-11-12 “Strontium vacancy clustering in Ti-excess SrTiO3 thin film”
Y. Tokuda, S. Kobayashi, T. Ohnishi, T. Mizoguchi, N. Shibata, Y. Ikuhara, and T. Yamamoto
Appl. Phys. Lett., vol.99 (2011) 033110-1 . 033110-3
E-11-13 “Strain control spin reorientation tansition in DyFeO3/SrTiO3 epitaxial film”
T.-Y. Khim, N.J. Eom, J.S. Kim, B.-G. Park, J.-Y. Kim, and J.-H. Park
Appl. Phys. Lett., vol.99 (2011) 072501-1 . 072501-3
E-11-14 “Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructures”
S. Yoshida, T. Yokogawa, Y. Imai, S. Kimura, and O. Sakata
Appl. Phys. Lett., vol.99 (2011) 131909-1 . 131909-3
E-11-15 “Weak ferromagnetism in hexagonal orthoferrites RFeO3 (R=Lu, Er-Tb)”
A.R. Akbashev, A.S. Semisalova, N.S. Perov, and A.R. Kaul
Appl. Phys. Lett., vol.99, (2011) 122502-1 . 122502-3 (I-11-07)
E-11-16 “Electric-field control of phase separation and memory effect in Pr0.6Ca0.4MnO3 / Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures”
Q.P. Chen, J.J. Yang, Y. G. Zhao, S. Zhang, J.W. Wang, M.H. Zhu, Y. Yu, X.Z. Zhang, Z. Wang, B. Yang, D. Xie, and T.L. Ren
Appl. Phys. Lett., vol.98, (2011) 172507-1 . 172507-3
E-11-17 “Growth of Ruddlesden-Popper type faults in Sr-excess SrTiO3 homoepitaxial thin films by pulsed laser deposition”
Y. Tokuda, S. Kobayashi, T. Ohnishi, T. Mizoguchi, N. Shibata, Y. Ikuhara, and T. Yamamoto
Appl. Phys. Lett., vol.99, (2011) 173109-1 . 173109-3
E-11-18 “Epitaxial τ phase MnAl thin films on MgO(001) with thickness-dependent magnetic anisotropy”
Y. Cui, W. Yin, W. Chen, J. Lu, and S.A. Wolf
Jour. Appl. Phys., vol.110, (2011) 103909-1 . 103909-4
E-11-19 “Large rectifying leakage current in Pt/BaTiO3/Nb:SrTiO3/Pt structure”
T.J. Zhang, R.K. Pan, Z.J. Ma, M.G. Duan, D.F. Wang, and M. He
Appl. Phys. Lett., vol.99, (2011) 182106-1 . 182106-3
E-11-20 “Role of interfacial transition layers in VO2/Al2O3 heterostructures”
H. Zhou, M.F. Chisholm, T.H. Yang, S.J. Pennycook and J. Narayan
Jour. Appl. Phys., vol.110, (2011) 073515-1 . 073515-7
E-11-21 “Aligned and exchange-coupled FePt-based films”
Y. Liu, T.A. George, R. Skomski, and D.J. Sellmyer
Appl. Phys. Lett., vol.99, (2011) 172504-1 . 172504-3
E-11-22 “Epitaxial thin films of p-type spinel ferrite grown by pulsed laser deposition”
M. Seki, H. Tabata, H. Ohta, K. Inaba, and S. Kobayashii
Appl. Phys. Lett., vol.99, (2011) 242504-1 . 242504-3 (I-11-10)
E-11-23 “Ｘ線回折同時測定装置によるコンビナトリアルエピタキシャル薄膜のハイスループット分析”
表 和彦
Jour. Vac. Soc. Jpn., vol.54, (2011) 571 – 576
E-11-24 “1100nm InGaAs/(Al)GaAs quantum dot lasers for high-power application”
E-M. Pavelescu, C. Gilfert, P. Weinmann, M. Dănilă, A. Dinescu, M. Jacob, M. Kamp, and J-P.
Reithmaier Jour. Phys. D.: Appl. Phys., vol.44, (2011) 145104-1 – 145104-4
E-11-25 “Nanostructure andInternal Strain Distibution in Porous Silicon”
M. Miu, M. Danila, I. Kleps, A. Bragaru, and M. Simion
Jour. Nanosci. Nanotechnol., vol.11, (2011) 9136 – 9136
E-11-26 “Tuning magnetoresistance and exchange coupling in ZnO by doping transition metals”
Y.-F. Tian, Y.F. Li and T. Wu
Appl. Phys. Lett., vol.99, (2011) 222503-1 – 222503-3
E-11-27 “Magneto- and electro-resistance effects in pahse separated Pr0.55(Ca0.65S0.35)0.45MnO3 films”
A. Kumar, and J. Dho
Jour. Appl. Phys., vol.110, (2011) 093901-1 – 093901-6
E-11-28 “In 系窒化物半導体のMOVPE およびHVPE 成長”
村上 尚・花岡 幸史・富樫 理恵・稲葉 克彦・熊谷 義直・纐纈 明伯
日本結晶成長学会誌, vol.38 (2011) 255 – 262
E-11-29 “Thermally induced nanoscale structural and morphological changes for atomic-layer-deposited Pt on SrTiO3(001)”
Z. Feng, S.T. Christensen, J.W. Elam, B. Lee, M.C. Hersam, and M.J. Bedzyk
Jour. Appl. Phys., vol.110, (2011) 102202-1 – 102202-8 (R-11-6)
E-11-30 “Transverse thermoelectric response in tilted orientation La1-xSrxCoO3 (0.05Y. Wang, L. Yu, B. Jiang, and P.X. Zhang
Jour. Appl. Phys., vol.110, (2011) 123111-1 - 123111-5
E-11-31 “Epitaxial growth of Fe and MgO layers on GaAs(001): Microstructure and magnetic properties”
K.H. Kim, H.J. Kim, J.P. Ahn, S.C. Lee, S.O. Won, J.W. Choi, and J. Chang
Jour. Appl. Phys., vol.110, (2011) 114910-1 - 114910-6
E-11-32 “Interface-dependent rectifying TbMnO3-based heterojunctions”
Y. Cui, Y. Tian, W. Liu, Y. Li, R. Wang, and T. Wu
(OpenAccess) AIP Advances, vol.1, (2011) 042129-1 - 042129-11
E-11-33 “Buffer-Layer-Assisted Epitaxial Growth of Perfectly Aligned Oxide Nanorod Arrays in Solution”
G.P. Li, L. Jiang, S.J. Wang, X.W. Sun, X. Chen, and T. Wu
Cryst. Growth Design, vol.11, (2011) 4885 - 4891
E-11-34 “X-ray Diffraction Analysis of Surface Si Nanostructures used for Ge Nanoheteroepitaxy”
J. Matejova, G. Kozlowski, P. Zaumseil, V. Holy and T. Schröder
Mater. Structure, vol.18, (2011) 199 - 203
E-11-35 “High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(111) heterostructures”
P. Zaumseil, L. Tarnawska, P. Storck, and T. Schroeder
J. Phys. D:Appl. Phys., vol.44, (2011) 315403-1 - 315403-4
E-11-36 “Anisotropic strain of BaZrO3, BaCeO3 and Y2O3 nanoinclusions in a YBa2Cu3O7-x epitaxial film matrix and its relation to the oxygen content of the superconductor”
S.V. Samoilenkov, O.V. Boytsova V.A. Amelichev, and A.R. Kaul Supe
rcond. Sci. Technol., vol.24, (2011) 055003-1 - 055003-7 (I-11-13)
E-11-37 “About the strain state of different metal oxide layers epitaxially grown on Si(111)”
P. Zaumseil and T. Schroeder
J. Phys. D: Appl. Phys., vol.44, (2011) 055403-1 - 055403-7 (I-11-14)
E-11-38 “Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology”
R. Bantaculo, E. Saitoh, Y. Miyamoto, H. Handa, and M. Suemitsu
Thin Solid Films, vol.520, (2011) 730 - 733
E-11-39 “GaN Based Ultraviolet Photodetectors”
D.G. Zhao and D.S. Jiang
(OpenAccess) Chapter 14, p.333-352 in “Photodiodes - World Activities in 2011” Prof. Jeong Woo Park (Ed.), published by InTech (2011)
E-11-40 “Introducing Ohmic Contacts into Silicon Carbide Technology”
Z. Wang, S. Tsukimoto, M. Saito and Y. Ikuhara
(OpenAccess) Chapter 12, p.283-308 in “Silicon Carbide - Materials, Processing and Applications in Electronic Devices” Dr. Moumita Mukherjee (Ed.), published by InTech (2011)
E-11-41 “n-Type β-FeSi2/p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering”
M. Shaban and T. Yoshitake
(OpenAccess) Chapter 15, p.315-330 in “Advances in Photodiodes” Prof. Gian Franco Dalla Betta (Ed.), published by InTech (2011)
E-11-42 “Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View”
L. Qiao and X. Bi
(OpenAccess) Chapter 18, p.363-388 in “Ferroelectrics - Material Aspects” Dr. Mickael Lallart (Ed.), published by InTech (2011)
E-11-43 “Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC”
B. Krishnan, S. Kotamraju, R. Venkatesh, K.G. Thirumalai, aand Y. Koshka
Jour. Cryst. Growth, vol. 321, (2011) 8 - 14
E-11-44 “Epitaxial growth of Mn-doped γ-Ga2O3 on spinel substrate”
H. Hayashi, R. Huang, F. Oba, T. Hirayama, and I. Tanaka
Jour. Mater. Res., vol.26, (2011) 578 - 583 (R-11-11)
E-11-45 “Structural study of polar MgO(111) epitaxial thin films grown on SrTiO3(111)”
K. Matsuzaki, H. Takagi, H. Hosono, and T. Susaki
Phys. Rev. B, vol. 84 (2011) 235448-1 – 235448-6 (I-11-18)
E-11-46 “Spin polarization measurements of Co2Mn(Ga0.5Sn0.5) thin films”
B.S.D.Ch.S. Varaprasad, A. Rajanikanth, Y.K. Takahashi, and K. Hono
Jour. Magn. Magn. Mater., vol.323, (2011) 3092 - 3097

2010年

E-10-01 “Improvement of Thermoelectric Characteristic of [Ca2CoO3]x[CoO2] Thin Films by Controlling Their Microstructures”
Y. Yoshida, Y. Hayashi, Y. Ichino, and Y. Takai
Jpn. Jour. Appl. Phys., vol. 49, (2010) 010210-1 . 010210-2
E-10-02 “Electrical transport properties of perpendicular magnetized Mn-Ga epitaxial films”
F. Wu, E.P. Sajitha, S. Mizukami, D. Watanabe, T. Miyazaki, H. Naganuma, M. Oogane, and Y. Ando
Appl. Phys Lett., vol. 96, (2010) 042505-1 . 042505-3
E-10-03 “Strain of GaAs/GaAsP Superllatices Used as Spin-Polarized Electron Photocathodes, Determined by X-Ray Diffraction”
T. Saka, Y. Ishida, M. Kanda, X. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, and T. Koshikawa
e-J. Surf. Sci. Nanotech., vol. 8, (2010) 125-130
E-10-04 “High Critical Current Density 4MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La,Sr)(Al,Ta)O3 Substrates without Buffer Layers” (I-10-07)
T. Katase, H. Hiramatsu, T. Kamiya, and H. Hosono
Appl. Phys. Express, vol. 3, (2010) 063101-1 . 063101-3
E-10-05 “Characterization of semiconductor films epitaxially grown on thin metal oxide buffer layers”
P. Zaumseil, A. Giussani, O. Seifarth, T. Arguirov, M.A. Schubert, and T. Schroeder
Solid State Phenometa, vol. 156-158, (2010) 467-472
E-10-06 “A single crystalline strontium titanate thin film transistor”
K. Uchida, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta
Jour. Appl. Phys., vol. 107, (2010) 096103-1 . 096103-3
E-10-07 “Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3 (001)” (I-10-09)
J. Cheng, A. Chettaoui, J. Penuelas, B. Gobaut, P. Regreny, A. Benamrouche, Y. Robach, G. Hollinger, and G. Saint-Girons
Jour. Appl. Phys., vol. 107, (2010) 094902-1 . 094902-4
E-10-08 “Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation” (R-10-5)
P. Zaumseil, A. Giussani, and T. Schroeder
Powder Diffraction, vol. 25, (2010) 92 . 98
E-10-09 “Magnetic anisotropy and metal-insulator transition in SrRuO3 thin films at different growth temperatures”
X. W. Wang, X. Wang, Y. Q. Zhang, Y. L. Zhu, Z. J. Wang, and Z. D. Zhang
Jour. Appl. Phys., vol. 107, (2010) 113925-1 . 113925-5
E-10-10 “Structure, magnetic, and microwave properties of thick Ba-hexaferrite films epitaxially grown on GaN/Al2O3 substrates”
Z. Chen, A. Yang, K. Mahalingam, K.L. Averett, J. Gao, G.J. Brown, C. Vittoria, and V.G. Harris
Appl. Phys. Lett., vol. 96, (2010) 242502-1 . 242502-3
E-10-11 “Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study”
J. H. Li, D. W. Stokes, J. C Wickett, O. Caha, K. E. Bassler, and S. C. Moss
Jour. Appl. Phys., vol. 107, (2010) 123504-1 . 123504-9
E-10-12 “Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111)SrTiO3 substrates by pulsed laser deposition”
H. Sakurai, S. Yamazoe, and T. Wada
Appl. Phys. Lett., vol. 97, (2010) 042901-1 . 042901-3
E-10-13 “ミストCVD 法によるコランダム型構造酸化物半導体薄膜の作製と評価”
金子健太郎・野村太一・福井裕・藤田静雄
材料, vol. 59, (2010) 686 – 689
E-10-14 “Role of twin boundaries in semiconductor to metal transition characteristics of VO2 films”
T.H. Yang, C. Jin, H. Zhou, R.J. Narayan, and J. Narayan
Appl. Phys. Lett., vol. 97, (2010) 072101-1 . 072101-3
E-10-15 “Epitaxial Thin Films of InFe2O4 and InFeO3 with Two-Dimensional Triangular Lattice Structures Grown by Pulsed Laser Deposition”
M. Seki, T. Konya, K. Inaba, and H. Tabata
Appl. Phys. Express, vol.3, (2010) 105801-1 . 105801-3 (I-10-16)
E-10-16 “Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates”
R. Chandrasekaran, T.D. Moustakas, A.S. Ozcan, K.F. Ludwig, L. Zhou, and D.J. Smith
Jour. Appl. Phys., vol.108, (2010) 043501-1 . 043501-4
E-10-17 “High resolution grazing-incidence in-plane x-ray diffraction for measuring the strain of a Si thin layer”
K. Omote J. Phys.: Condens. Matter, vol. 22, (2010) 474004-1 . 474004-7 (I-10-17)
E-10-18 “Deep-ultraviolet photodetectors from epitaxially grown NixMg1-xO”
J.W. Mares, R.C. Boutwell, M. Wei, A. Scheurer, and W.V. Schoenfeld
Appl. Phys. Lett., vol. 97, (2010) 161113-1 . 161113-3
E-10-19 “Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN ingetgration on Si(111)”
L. Tarnawska, A. Giussani, P. Zauseil, M.A. Schubert, R. Paszkiewicz, O. Brandt, P. Stock, and T. Schroeder
Jour. Appl. Phys., vol. 108, (2010) 063502-1 . 063502-7
E-10-20 “Low symmetry monoclinic Mc phase in epitaxial BiFeO3 thin films on LaSrAlO4 substrates”
Z. Chen, Z. Luo, Y. Qi, P. Yang, S. Wu, C. Huang, T. Wu, J. Wang, C. Gao, T. Sritharan, and L. Chen
Appl. Phys. Lett., vol. 97, (2010) 242903-1 . 242903-3
E-10-21 “A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures”
A. Giussani, P. Zaumseil, O. Seifarth, P. Storck, and T. Schroeder
(OpenAccess) New Jour. Phys., vol.12, (2010) 093005-1 . 093005-12
E-10-22 “Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and physical properties”
S. Mal, S. Nori, C. Jin, J. Narayan, S. Nellutla, A.I. Smirnov, and J.T. Prater
Jour. Appl. Phys., vol.108, (2010) 073510-1 . 073510-10
E-10-23 “Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction”
A. Toda N. Ikarashi
Jpn. Jour. Appl. Phys., vol.49, (2010) 04DB03-1 . 04DB03-5
E-10-24 “Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory”
O. Seifarth, B. Dietrich, P. Zaumseil, A. Giussani, P. Storck, and T. Schroeder
Jour. Appl. Phys., vol.108, (2010) 073526-1 . 073526-7
E-10-25 “Microwave annealing of Mg-implanted and in situ Be-doped GaN”
G.S. Aluri, M. Gowda, N.A. Mahadik, S.G. Sundaresan, M.V. Rao, J.A. Schreifels, J.A. Freitas,Jr., S.B. Qadri, and Y.L. Tian
Jour. Appl. Phys., vol.108, (2010) 083103-1 . 083103-7
E-10-26 “Thin film nanocomposites based on YBCO with defects comprised of self-assembled inclusions”
O.V. Boytsova, A.R. Kaul, S.V. Samoilenkov, and I.E. Voloshin
(OpenAccess) Jour. Phys.; Conf. Ser., vol.234, (2010) 012008-1 – 012008-7
E-10-27 “XRD characterization of ZnO layers grown on GaAs(111)B, c-plane and a-plane sapphire substrates by plasma-assisted MBE”
T. Muranaka, T. Sakano, K. Mizoguchi, Y. Nabetani, T. Akitsu, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, and Y. Fujikawa
Phys. Stat. Solid.,-C, vol.7, (2010) 1556-1558 (I-10-21)
E-10-28 “Sol-Gel-Derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect”
B. Liu, T. Sun, J. He, and V.P. Dravid
ACS Nano, vol.4, (2010) 6836-6842
E-10-29 “Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate”
S. Sawamura, N. Sakamoto, D.S. Fu, K. Shinozaki, H. Suzuki, and N. Wakiya
Key Engineer. Mater., vol.445, (2010) 160-163
E-10-30 “Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition”
G.J. Lu, J.J. Zhu, D.S. Jiang, Y.T. Wang, D.G. Zhao, Z.S. Liu, S.M. Zhang, and H. Yang
Chin. Phys. B, vol.19, (2010) 026804-1 -026804-6
E-10-31 “Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors”
D.G. Zhao, S. Zhang, W.B. Liu, X.P. Hao, D.S. Jiang, J.J. Zhu, Z.S. Liu, H. Wang, S.M. Zhang, H. Yang, and L. Wei
Chin. Phys. B, vol.19, (2010) 057802-1 -057802-4
E-10-32 “Epitaxial SrRuO3 Thin Films Deposited on SrO buffered-Si(001) Substrates for Ferroelectric Pb(Zr0.2Ti0.8)O3 Thin Films”
Soon-Gil Yoon
(OpenAccess) Chapter 5, p.89-98 in “Ferroelectrics” Dr. Indrani Coondoo (Ed.), published by InTech (2010)
E-10-33 “Growth of epitaxial TmFeCuO4 thin films by pulsed laser deposition”
M. Seki, M. Mikami, F. Iwamoto, Y. Ono, T. Osone, and H. Tabata
Jour. Cryst. Growth, vol.312, (2010) 2273-2278
E-10-34 “MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (1 0–12) r-plane sapphire substrate”
H. Yu, M. Ozturk, P. Demirel, H. Cakmak, E. Ozbay
Jour. Cryst. Growth, vol.312, (2010) 3438-3442

2009年

E-09-01 “Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on vicinal SiC(0001) Substrates”
J. Suda, H. Miyake, K. Amari, Y. Nakno, and T. Kimoto
Jpn. Jour. Appl. Phys., vol. 48, (2009) 020202-1 . 020202-3
E-09-02 “Structural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca0.33CoO2 Epitaxial Films”
K. Sugiura, H. Ohta, Y. Ishida, R. Huang, T. Saito, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto
Appl. Phys. Express, vol. 2, (2009) 035503-1 . 035503-34 (I-09-02)
E-09-03 “Preparation and structural characterization of SmCo5 (0001) epitaxial thin films grown on Cu(111) underlayers”
M. Ohtake, Y. Nukaga, F. Kirino, and M. Futamoto
Jour. Appl. Phys., vol. 105, (2009) 07C315 -1 - 07C315 -3
E-09-04 “Epitaxial growth of Sm(Co,Cu)5 thin film on Al2O3(0001) single-crystal substrate”
M. Ohtake, Y. Nukaga, F. Kirino, and M. Futamoto
Jour. Cryst. Growth, vol.311, (2009) 2251-2254 (I-09-04)
E-09-05 “Growth of single-crystal SiO2 cluster on Si(001) surface”
T. Tanemura, S. Sato, M. Kundu, C. Yamada, and Y. Murata
Jour. Appl. Phys., vol.105, (2009) 074310-1 . 074310-7 (I-09-05)
E-09-06 “Epitaxial film growth and optoelectric properties of layered semiconductors, LaMnXO (X=P, As, and Sb)”
K. Kayanuma, H. Hiramatsu, T. Kamiya, M. Hirano, and H. Hosono
Jour. Appl. Phys., vol.105, (2009) 073903-1 . 073903-7 (I-09-06)
E-09-07 “Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy”
K. Sugiura, H. Ohta, S. Nakagawa, R. Huang, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto
Appl. Phys. Lett., vol. 94 (2009) 152105-1 . 152105-3
E-09-08 “Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films”
D.G. Zhao, D.S. Jiang, J.J. Zhu, Z.S. Liu, H. Wang, S.M. Zhang, Y.T. Wang, and H. Yang
Appl. Phys. Lett., vol. 95 (2009) 041901-1 . 041901-3
E-09-09 “The effect of SrTiO3 substrate orientation on the surface morphology and ferroelectric properties of pulsed laser deposited NaNbO3 films”
S. Yamazoe, H. Sakurai, M. Fukuda, H. Adachi, and T. Wada
Appl. Phys. Lett., vol. 95 (2009) 062906-1 . 062906-3
E-09-10 “Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence”
A. Giussani, P. Zaumseil, P. Rodenbach, G. Weider, M.A. Schbert, D. Geiger, H. Lichte, P. Storck, J. Wollschlager, and T. Schroeder
Jour. Appl. Phys., vol. 106 (2009) 073502-1 . 073502-8
E-09-11 “A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques”
P. Zaumseil, T. Schroeder, J.S. Park, J.G. Fiorenza, and A. Lochtefeld
Jour. Appl. Phys., vol. 106 (2009) 093524-1 . 093524-7
E-09-12 “Epitaxial ZnO Thin Films on a-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition”
H. Nishinaka, Y. Kamada, N. Kameyama, and S. Fujita
Jpn. Jour. Appl. Phys., vol. 48, (2009) 121103-1 . 121103-5 (I-09-20)
E-09-13 “Epitaxial growth of BaRuO3 thin films on MgO substrates by laser ablation”
A. Ito, H. Masumoto, T. Goto, and S. Sato
Jour. Ceram. Soc. Jpn., vol. 117, (2009) 426-430
E-09-14 “Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe2As2”
T. Katase, H. Hiramatsu, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono
Solid State Comm., vol. 149, (2009) 2121 – 2124 (I-09-22)
E-09-15 “Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems”
C. Borschel, C. Ronning, H. Hofsäss, A. Giussani, P. Zaumseil, Ch. Wenger, P. Storck, and T. Schroeder
J. Vac. Sci. Technol. B, vol. 27, (2009) 305 – 309 (R-09-9)
E-09-16 “Epitaxial Growth of Room-Temperature Ferrimagnetic Semiconductor Thin Films Based on Fe3O4-Fe2TiO4 Solid Solution”
H. Murase, K. Fujita, S. Murai, and K. Tanaka
Materials Transactions, vol. 50, (2009) 1076 – 1080 (I-09-23)
E-09-17 “Single Crystal Growth and Magnetic, Optical, and Photoelectrical Properties of EuO Thin Film”
H. Miyazaki, T. Ito, H Im, K. Terashima, S. Yagi, M. Kato, K. Soda, and S. Kimura
Jpn. Jour. Appl. Phys., vol.48, (2009) 055504-1 -055504-4
E-09-18 “InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer”
H. Wang, J.H. Zhu, D.S. Jiang, J.J. Zhu, D.G. Zhao, Z.S. Liu, S.M. Zhang, and H. Yang
Chin Phys. Lett., vol.26, (2009) 107302-1 -107302-4
E-09-19 “Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area”
W.B.Liu, D.G. Zhao, X. Sun, S. Zhan1, D.S. Jiang, H. Wang, S.M. Zhang, Z.S. Liu, J.J. Zhu, Y.T. Wang, L.H. Duan, and H. Yan
J. Phys. D: Appl. Phys., vol.46, (2009) 015108-1 -015108-5
E-09-20 “Photoluminescence properties of Pb1-xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy”
K. Koike, T. Hotei, R. Kawaguchi, and M. Yano
J. Cryst. Growth, vol.311, (2009) 2102 -2105
E-09-21 “Synthesis, structural and magnetic properties of epitaxial MgFe2O4 thin films by molecular beam epitaxy”
J. Cheng, V.K. Lazarov, G.E. Sterbinsky, and B.W. Wessels
J. Vac. Sci. Technol. B, vol.27, (2009) 148 -151
E-09-22 “Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)”
T. Schroeder, A. Giussani, H.-J. Muessig, G. Weidner, I. Costina, Ch. Wenger, M. Lukosius, P. Storck, P. Zaumseil
Microelectron. Eng., vol. 86, (2009) 1615 – 1620 (I-09-26)
E-09-23 “Growth and structural properties of ZnO films on (10−10) m-plane sapphire substrates by plasma-assisted molecular beam epitaxy”
J.H. Kim, S.K. Han, S.I. Hong, S.K. Hong, J.W. Lee, J.Y. Lee, J.H. Song, J.S. Park and T. Yao
Jour. Vac. Sci. Technol. B, vol. 27, (2009) 1625 – 1630
E-09-24 “Phase transitions and the temperature dependence of the dielectric properties in tetragonally strained barium strontium titanate films”
L.M.B. Alldredge, W. Chang, S.W. Kirchoefer, and J.M. Pond
Appl. Phys. Lett., vol. 94, (2009) 052904-1 – 052904-3

2008年

E-08-01 “Molecular Layer-by-Layer Growth of C60 Thin Films by Continuous-Wave Infrared Laser Deposition”
S. Yaginuma, K. Itaka, M. Haemitsu, M. Kayayama, K. Ueno, T. Ohnishi, M. Lippmaa, Y. Matsumoto, and H. Koinuma
Appl. Phys. Express, vol. 1, (2008) 015005-1 . 015005-3 (I-08-01)
E-08-02 “Thermal Stability of Giant Thermoelectric Seebeck Coefficient for SrTiO3/SrTi0.8Nb0.2O3 Superlattices at 900K”
K.H Lee, Y. Mune, H. Ohta, and K. Koumoto
Appl. Phys. Express, vol. 1, (2008) 015007-1 . 015007-3
E-08-03 “Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi- insulating (001) InP Substrates”
J.T. Asubar, A. Kato, Y. Jinbo, and N. Uchitomi
Jpn. Jour. Appl. Phys., vol.47 (2008) 657-660
E-08-04 “Crystal Growth of Magnetoelectric Cr2O3 Thin Film on Sapphire and SrTiO3”
T. Asada, K. Nagase. N. Iwata, and H. Yamamoto
Jpn. Jour. Appl. Phys., vol.47 (2008) 546-549
E-08-05 “Epitaxial Growth of SiC on Silicon on Insulator Substrates with Ultrathin Top Si Layer by Hot-Mesh Chemical Vapor Deposition”
H. Miura, K. Yasui, K. Abe, A. Masuda, Y. Kuroki, H. Nishiyama, M. Takata, Y. Inoue, and T. Akahane
Jpn. Jour. Appl. Phys., vol.47 (2008) 569-572
E-08-06 “Structural and magnetic properties of magnetite-containing epitaxial iron oxide films grown on MgO(001) substrates”
T. Kado
Jour. Appl. Phys., vol.103 (2008) 043902-1 - 043902-4 (same article with I-08-06)
E-08-07 “Growth of Crystalline Zinc Oxide Thin Films by Fine-Channel-Mist Chemical Vapor Deposition”
T. Kawaharamura, H. Nishinaka, and S. Fujita
Jpn. Jour. Appl. Phys., vol.47 (2008) 4669-4675
E-08-08 “Critical thickness for giant thermoelectric Seebeck coefficient of 2DEG confined in SrTiO3/SrTi0.8Nb0.2O3 superlattices”
H. Ohta, Y. Mine, K. Koumoto, T. Mizoguchi, and Y. Ikuhara
Thin Solid Films, vol.516 (2008) 5916-5920
E-08-09 “Epitaxial Film Growth of LixCoO2 (0.6 . x . 0.9) via Topotactic Ion Exchange of Na0.8CoO2”
T. Mizutani, K. Sugiura, H. Ohta, and K. Koumoto
Cryst. Growth Des., vol.8 (2008) 755-758
E-08-10 “Thermal precipitation of self-organized PbTe quantum dots in CdTe host matrix”
K. Koike, T. Itakura, T. Hotei, M. Yano, H. Groiss, G. Hesser, and F. Schaffler
Phys. Stat. Solidi -c, vol.9 (2008) 2746-2749
E-08-11 “An approach for single crystalline zinc oxide thin films with fine channel mist chemical vapor deposition method”
T. Kawaharamura, and S. Fujita
Phys. Stat. Solidi -c, vol.9 (2008) 3138-3140 (E-08-07)
E-08-12 “Simple Processing of ZnO from Solution : Homoepitaxial Film and Bulk Single Crystal”
D. Ehrentraut, M. Miyamoto, H. Sato, J. Riegler, K. Byappa, K. Fujii, K. Inaba, T. Fukuda, and T. Adschiri
Cryst. Growth, Design, vol.8 (2008) 2814-2820
E-08-13 “A complex x-ray characterization of heteroepitaxial silicon/insulator/silicon (111) structures”
P. Zaumseil and T. Schroeder
Jour. Appl. Phys., vol.104 (2008) 023532-1 . 023532-7
E-08-14 “p-channel thin-film transistor using p-type oxide semiconductor, SnO”
Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono
App. Phys. Lett., vol.93 (2008) 032113-1 . 032113-3 (I-08-10)
E-08-15 “Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy”
H. Hiramatsu, T. Katase, T. Kamiya, M. Hirano, and H. Hosono
App. Phys. Express, vol.1 (2008) 101702-1 . 101702-3
E-08-16 “X-ray measurement of the tetragonal distortion of the oxide buffer layer in Ge/Pr2O3/Si(111) heteroepitaxial structures”
P. Zaumseil
J. Phys. D : Appl. Phys., vol.41 (2008) 135308-1 . 135308-7
E-08-17 “Heteroepitaxy of Corundum-Structured α-Ga2O3 Thin Films on α-Al2O3 Substrates by Ultrasonic Mist Vapor Deposition”
D. Shinohara and S. Fujita
Jpn. Jour. Appl. Phys., vol.47 (2008) 7311-7313
E-08-18 “X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces”
Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
Trans. Mater. Res. Soc. Jpn., vol.33, (2008) 591-594
E-08-19 “Heteroepitaxial growth of optoelectric properties of layered iron oxyarsenide, LaFeAsO”
H. Hiramatsu, T. Katase, T. Kamiya, M. Hirano, and H. Hosono
App. Phys. Lett., vol.93 (2008) 162504-1 . 162504-3 (I-08-15)
E-08-20 削除
E-08-21 “Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures”
T. Schroeder, P. Zaumseil, O. Seifarth1, A. Giussani, H.-J. Mussig, P. Storck, D. Geiger, H. Lichte and J. Dabrowski (same article with I-08-27, R-08-6)
(OpenAccess) New Jour. Phys., vol.10, (2008) 113004-1 . 113004-21
E-08-22 “Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy”
T. Schroeder, I. Costina, P. Storck, A. Wilke, O. Seifarth, A. Giussani, H.-J. Mussig, and P. Zaumseil
Jour. Appl. Phys., vol.103, (2008) 084102-1 . 084102-11
E-08-23 “In situ strain measurements on GaN/AlGaN Schottky diodes with variable bias”
N.A. Mahadik, S.B. Quadri, and M.V. Rao
Appl. Phys. Lett., vol.93, (2008) 262106-1 . 262106-3
E-08-24 “Effect of epitaxy and lattice mismatch on saturation magnetization of γ’-Fe4N thin films”
S. Atiq, H.S. Ko, S.A. Siddiqi, and S.C. Shin
Appl. Phys. Lett., vol.92, (2008) 222507-1 – 222507-3
E-08-25 “Growth and structural properties of m-plane ZnO on MgO(001) by molecular beam epitaxy”
E. Cagin, J. Yang, W. Wang, J.D. Phillips, S.K. Hong, J.W. Lee, and J.Y. Lee
Appl. Phys. Lett., vol.92, (2008) 233505-1 – 233505-3
E-08-26 “Observation of room temperature ferromagnetism in Ga:ZnO: A transition metal free tranparent ferromagnetic conductor”
V. Bhosle and J Narayan
Appl. Phys. Lett., vol.93, (2008) 021912-1 – 21912-3
E-08-27 “Fabrication and properties of epitaxial growth BiScO3-PbTiO3 thin film via a hydrothermal method”
C.F. Zhong, X.H. Wang, H. Wen, L.T. Li, C.W. Nan, and Y.H. Lin
Appl. Phys. Lett., vol.92, (2008) 222910-1 – 222910-3
E-08-28 “Epitaxial growth of SiC on Silion on Insulator Substrates with Ultrathin Top Si Layer by Hot-Mesh Chemical Vapor Deposition”
H. Miura, K. Yasui, K. Abe, A. Masuda, Y. Kuroki, H. Nishiyama, M. Takata, Y. Inoue, and T. Akahane
Jpn. Jour. Appl. Phys., vol.47, (2008) 569 – 572
E-08-29 “Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy”
G.X. Miao, J.Y. Chang, M.J. van Veenhuizen, K. Thiel, M. Seibt, G. Eilers, M. Munzenberg, and J.S. Moodera
Appl. Phys. Lett., vol.93, (2008) 142511-1 – 142511-3
E-08-30 “Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transitor”
N.A. Mahadik, S.B. Qadri, and M.V. Rao
Appl. Phys. Lett., vol.93, (2008) 222106-1 – 222106-3
E-08-31 “Epitaxial growth of Gd2-xCexCuO4 thin films”
Y. Krockenberger, J. Kurian, M. Naito, and L. Alff
(OpenAccess) Jour. Phys.: Conf. Ser., vol.108, (2008) 012041-1 – 012041-6
E-08-32 “Enhancement in magnetoeletric response in CoFe2O4-BaTiO3 heterostructure”
Y. Zhang, C. Deng, J. Ma, Y. Lin, and C.W. Nan
Appl. Phys.Lett., vol.92, (2008) 062911-1 – 062911-3
E-08-33 “Dielectric response and structure of in-plane tensile strained BaTiO3 thin films grown on the LaNiO3 buffered Si substrate”
L. Qiao and X. Bi
Appl. Phys.Lett., vol.92, (2008) 062912-1 – 062912-3
E-08-34 “Evolution of defects upon annealing in He-implanted 4H-SiC”
S. Leclerc, M.F. Beaufort, A. Declémy, and J.F. Barbot
Appl. Phys.Lett., vol.93, (2008) 122101-1 – 122101-3
E-08-35 “Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells”
D.G. Zhao, D.D. Jiang, J.J. Zhu, Z.S. Liu, S.M. Zhang, Y.T. Wang, and H. Yang
Chin. Phys.Lett., vol.25, (2008) 4143 – 4146
E-08-36 “Stress Analysis of ZnO Film with a GaN Buffer Layer on Sapphire Substrate”
J.P. Cui, X.F. Wang, Y. Duan, J.X. He, and Y.P. Zeng
Chin. Phys.Lett., vol.25, (2008) 2277 – 2280
E-08-37 “An evidence of defect gettering in GaN”
A. Majid, A. Ali, J.J. Zhu, Y.T. Wang, and H. Yang
Physica B, vol.403, (2008) 2495 – 2499
E-08-38 “Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy”
J.P. Cui, Y. Duan, X.F. Wang, and Y.P. Zeng
Microelectron. Jour., vol.39, (2008) 1542 – 1544
E-08-39 “Structural properties of Ne implanted GaN”
A. Majid, A. Ali, J.J. Zhu, W. Liu, G.J. Lu,W.B. Liu, L.Q. Zhang, Z.S. Liu, H. Wang, D.G. Zhao, S.M. Zhan, D.S. Jiang, Y.T. Wang, H. Yang, and M. Israr
Phys. Scr., vol.77, (2008) 035601-1 – 035601-4
E-08-40 “The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition”
Z.F. Ma, D.G. Zhao, Y.T. Wang, D.S. Jiang, S.M. Zhang, J.J. Zhu, Z.S. Liu, B.J. Sun, H. Yang, and J.W. Liang
J. Phys. D: Appl. Phys., vol.41, (2008) 105106-1 – 105106-5
E-08-41 “Preparation and characterization of Eu-doped LiNbO3 films prepared by the sol-gel method”
M. Takahashi, K. Iyoda, Y. Maeda, T. Miyauchi, S. Ohkido, S. Sato, K. Wakita, N. Kajitani, K. Hotta, and M. Kurachi
Jour. Appl. Phys., vol.103 (2008) 034103-1 – 034103-5
E-08-42 “Atomic arrangements of (Ga1−xMnx)N nanorods grown on Al2O3 substrates”
K.H. Lee, J.Y. Lee, J.H. Jung, T.W. Kim, H.C. Jeon, and T.W. Kang
Appl. Phys. Lett., vol.92 (2008) 141919-1 – 141919-3
E-08-43 “Microstructure and magnetic properties of strained Fe3O4 films”
Y.Z. Chen, J.R. Sun, Y.N. Han, X.Y. Xie, J. Shen, C.B. Rong, S.L. He, and B.G. Shen
Jour. Appl. Phys., vol.103 (2008) 07D703-1 – 07D703-3
E-08-44 “Room-temperature ferromagnetism in the Co-doped Ba0.5Sr0.5TiO3 thin films”
L.B. Luo, Y.G. Zhao, H.F. Tian, J.J. Yang, H.Y. Zhang, J.Q. Li, J.J. Ding, B. He, S.Q. Wei, and C. Gao
Appl. Phys. Lett., vol.92 (2008) 232507-1 – 232507-3
E-08-45 “The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)/Si(111) support systems”
A. Giussani, O. Seifarth, P. Rodenbach, H.-J. Müssig, P. Zaumseil T. Weisemöller, C. Deiter, J. Wollschläger, P. Storck, and T. Schroeder
Jour. Appl. Phys., vol.103 (2008) 084110-1 – 084110-10
E-08-46 “Structural and dielectric characterizations of relaxor/ferroelectric superlattice films Pb(Sc1/2Nb1/2)O3/PbTiO3 fabricated on a single-lattice scale”
S. Asanuma, Y. Uesu, C. Malibert and J.-M. Kiat
Jour. Appl. Phys., vol.103, (2008) 094106-1 – 094106-9 (I-08-31)
E-08-47 “Piezoelectric behavior of SrRuO3 buffered lanthanum modified bismuth ferrite thin films grown by chemical method”
A.Z. Simões, A.H. M. Gonzalez, E.C. Aguiar, C.S. Riccardi, E. Longo, and J.A. Varela
Appl. Phys. Lett., vol.93, (2008) 142902-1 – 142902-3

2007年

E-07-01 “Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 ”
H. Ohta, S. Kim, Y. Mune, T. Mizoguchi, K. Nomura, S. Ohta, T. Nomura, Y. Nakanishi, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto
Natur. Mater., vol. 6, (2007) 129-134
E-07-02 “ａ面サファイア基板上にエピタキシャル成長したZnO 及び(Zn,Mg)O 単結晶薄膜のＸ線回折による評価”
稲葉 克彦・小池 一歩・佐々 誠彦・井上 正崇・矢野 満明
材料 vol.56 (2007) 223-228 （I-07-04 と同じ）
E-07-03 “m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane” 4H-SiC substrates
R. Armitage, M. Horita, J. Sudo, and T. Kimoto
Jour. Appl. Phys., vol. 101, (2007) 033534-1 . 033534-6
E-07-04 “Crystallographic Polarity and Crystallinity Characterization of Polar- and Nonpolar GaN epitaxial films by X-ray Diffraction Analyses” (M-07-1)
K. Inaba and H. Amano
Physica Status Solidi B., vol.244 (2007) 1775-1779
E-07-05 “Thermoelectric phase diagram in a CaTiO3-SrTiO3-BaTiO3 system”
M. Yamamoto, H. Ohta, and K. Koumoto
Appl. Phys. Lett., vol.90 (2007) 072101-1 . 072101-3
E-07-06 “Multiferroic thin film of Bi2NiMnO6 with double-perovskite structure”
M. Sakai, A. Masuno, D. Kan, M. Hashisaka, K. Takata, M. Azuma, M. Takano, and Y. Shimakawa
Appl. Phys. Lett., vol.90 (2007) 072903-1 . 072903-3
E-07-07 “Automated X-Ray Scattering”
J.H. Li, T. McNulty , and A. Takase
Ceramic Industry February (2007) 1-4 http://www.ceramicindustry.com/CDA/Articles/Feature_Article/BNP_GUID_9-5-2006_A_10000000000000049973
E-07-08 “State-of-the-Art and Prospective for Mass-Production of Wide Band Gap Semiconductor Crystals ZnO and GaN by Solvothermal Technology”
Dirk Ehrentraut
J. Assoc. Cryst. Growth, vol.34 (2007) 3-10
E-07-09 “Polarization-induced two-dimensional electron gas at Zn1-xMgxO/ZnO heterointerface ”
M. Yano, K. Hashimoto, K. Fujimoto, K. Koike, S. Sasa, M. Inoue, Y. Uetsuji, T. Ohnishi, and K. Inaba
J. Cryst. Growth, vol.301-302 (2007) 353-357
E-07-10 “X-Ray reciprocal space maps and x-ray scattering topographic observation of GaN layer on GaAs(001) in plasma-assisted molecular beam epitaxy”
Y. Suzuki, M. Shibahara, H. Kii, and Y. Chikaura
J. Appl. Phys., vol.101 (2007) 063516-1 . 063516-5
E-07-11 “Growth temperature dependence of structural properties of AlN films on ZnO(0001) substrates”
K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
Appl. Phys. Lett., vol.90, (2007) 141908-1 – 141908-3 (same article with R-07-4)
E-07-12 “Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10”
Y. Ogo, H. Yanagi, T. Kamiya, K. Nomura, M. Hirano, and H. Hosono
Jour. Appl. Phys., vol.101 (2007) 103714-1 - 103714-6 (I-07-08)
E-07-13 “Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films”
K.H. Lee, A. Ishizaki, S.W. Kim, H. Ohta, and K. Koumoto
Jour. Appl. Phys., vol.102 (2007) 033702-1 - 033702-6
E-07-14 “Structural characterization of MgO/c-Al2O3 interface”
T. Minegishi, T. Hanada, H. Suzuki, Z. Vashaei, D.C. Oh, K. Sumitani, O. Sakata, M.W. Cho, and T. Yao
Phys. Stat. Sol. (c)., vol.4 (2007) 1715-1718
E-07-15 “Piezoelectric Properties of Epitaxial NaNbO3 Thin Films Deposited on (001)SrRuO3/Pt/MgO Substrates”
T. Mino, S. Kuwajima, T. Suzuki, I. Kannno, H. Kotera, and K. Wasa
Jpn. Jour. Appl. Phys, vol.46 (2007) 6960-6963
E-07-16 “Enhanced Seebeck coefficient of quantum-confined electrons in SrTiO3/SrTi0.8Nb0.2O3 superlattices”
Y. Mune, H. Ohta, K. Koumoto, T. Mizoguchi, and Y. Ikuhara
Appl. Phys. Lett., vol.91 (2007) 192105-1 . 192105-3
E-07-17 “Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy”
S.H. Park, T. Hanada, D.C. Oh, T. Minegishi, H. Goto, G. Fujimoto, J.S. Park. I.H. Im, J.H. Chang, M.W. Cho, T. Yao, and K. Inaba
Appl. Phys. Lett., vol.91 (2007) 231904-1 - 231904-3
E-07-18 “Thermoelectric Performance of Epitaxial Thin Films of Layered Cobalt Oxides Grown by Reactive Solid-Phase Epitaxy with Topotactic Ion-Exchange Methods”
K. Sugiura, H. Ohta, and K. Koumoto
Intl. J. Apply. Ceram. Technol., vol.4 (2007) 308-317
E-07-19 “Structural and surface morphology of MnF2 epitaxial layers grown on grooved and ridged CaF2 (110) surface ”
R.N. Knutt, A.G. Banshchikov, A.K. Kaveev, N.S. Sokolpv, A.A. Lomov, Y. Ohtake, M. Tabuchi, and Y. Takeda
Jour. Phys. D : Appl. Phys., vol.40 (2007) 4896-4901
E-07-20 “High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy”
W. J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, and A. Yamamoto
Powder Diffraction, vol.22 (2007) 219-222
E-07-21 “Microstructure and Electrical Conductivity of Epitaxial CaRuO3 Thin Films Prepared on (001), (110) and (111) SrTiO3 Substrates by laser Ablation”
A. Ito, H. Masumoto, and T. Goto
Jour. Ceram. Soc. Jpn., vol.115 (2007) 683-687
E-07-22 “Validation of the p-type Behavior of an Ag-doped ZnSe Film Grown Heteroepitaxially on GaAs(100) Substrate ”
T. Narushima, H. Yanagita, and M. Orita
Mater. Res. Soc. Symp. Proc., vol.1012 (2007) 1012-Y03-16 (I-07-18)
E-07-23 “The effect of Eu substitution on the thermoelectric properties of SrTi0.8Nb0.2O3”
K. Kato, M. Yamamoto, S. Ohta, H. Muta, K. Kurosaki, S. Yamanaka. H. Iwasaki, H. Ohta, and K. Koumoto
Jour. Appl. Phys., vol.102 (2007) 116107-1 - 116107-3
E-07-24 “Epitaxial growth of sol-gel derived BiScO3-PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate”
H. Wen, X. Wang, C. Zhong, L. Shu, and L. Li
Appl. Phys. Lett., vol.90 (2007) 202902-1 - 202902-3
E-07-25 “Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire”
V. Bhosle and J Narayan
Appl. Phys. Lett., vol.90 (2007) 101903-1 - 101903-3
E-07-26 “Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection”
K.W. Liu, D.Z. Shen, C.C. Shan, J.Y. Zhang, B. Yao, Y.M. Lu, and X.W. Fan
Appl. Phys. Lett., vol.91 (2007) 201106-1 - 201106-3
E-07-27 “Phase structure of epitaxial Pb(Zr,Ti)O3 thin films on Nb-doped SrTiO3 single crystal substrates”
Z.X. Zhu, J.F. Li, F.P. Lai, Y. Zhen, Y.H. Lin, C.W. Nan, L. Li, and J. Li
Appl. Phys. Lett., vol.91 (2007) 222910-1 - 222910-3
E-07-28 “Exchange bias in self-organized Nd0.5Sr0.5MnO3 bilayer”
Y.H. Hyun, S.Y. Park, Y.P. Lee, V.G. Prokhorov, V.L. Svetchnikov
Appl. Phys. Lett., vol.91 (2007) 262505-1 - 262505-3
E-07-29 “Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)”
W. Liu, J.J. Zhu, D.S. Jiang, H. Yang, J.F. Wang
Appl. Phys. Lett., vol.90 (2007) 011914-1 - 011914-3
E-07-30 “Influence of defects in n- -GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors”
D.G. Zhao, D.S. Jiang, J.J. Zhu, Z.S. Liu, S.M. Zhang, J.W. Liang, H. Yang, X. Li, X.Y. Li, and H.M. Gong
Appl. Phys. Lett., vol.90 (2007) 062106-1 - 062106-3
E-07-31 “Pulsed-laser deposited Er:ZnO films for 1.54 μm emission”
A.K. Pradhan, L.Douglas, H. Mustafa, R. Mundle, D. Hunter, and C. Bonner
Appl. Phys. Lett., vol.90 (2007) 072108-1 - 072108-3
E-07-32 “Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition”
H. Kim, A. Cepler, M.S. Osofsky, R.C.Y. Auyeung, and A. Pique
Appl. Phys. Lett., vol.90 (2007) 203508-1 - 203508-3
E-07-33 “Syntheses of relaxor/ferroelectric superlattice thin films Pb(Sc1/2Nb1/2)O3/PbTiO3 and their dielectric properties”
S. Asanuma, Y. Uesu, C. Malibert, J.N. Kiat
Appl. Phys. Lett., vol.90 (2007) 242910-1 - 242910-3 (I-07-24)
E-07-34 “Electronic and magnetic properties of FeSe thin film prepared on GaAs(001) substrate by metal-organic chemical vapor deposition”
K.W. Liu, J.Y. Zhang, D.Z. Shen, .X. Shan, B.H. Li, Y.M. Lu, and X.W. Fan
Appl. Phys. Lett., vol.90 (2007) 262503-1 - 262503-3
E-07-35 “Room temperature ferromagnetism in Zn1-xCuxO thin films”
D. Chakrabori, J. Narayan, J.T. Prater
Appl. Phys. Lett., vol.90 (2007) 062504-1 - 062504-3
E-07-36 “Isothermal low-field tuning of exchange bias in epitaxial Fe/Cr2O3/Fe”
S. Sahoo, T. Mukherjee, K.D. Belashchenko, and Ch. Binek
Appl. Phys. Lett., vol.91 (2007) 172506-1 – 172506-3
E-07-37 “Resistive switching effect in SrTiO3-δ/Nb-doped SrTiO3 heterojunction”
M.C. Ni, S.M. Guo, H.F. Tian, Y.G. Zhao, and J.Q. Li
Appl. Phys. Lett., vol.91 (2007) 183502-1 – 183502-3
E-07-38 “Thermoelectric Properties of the Layered Cobaltite Ca3Co4O9 Epitaxial Films Fabricated by Topotactic Ion-Exchange Method”
K. Sugiura, H. Ohta, K. Nomura, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono and K. Koumoto
Mater. Trans, vol.48 (2007) 2104 – 2107
E-07-39 “The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer”
D.G. Zhao, D.S. Jiang, J.J. Zhu, Z.S. Liu, S.M. Zhang, Hui Yang, and J.W. Liang
Jour. Crystal Growth, vol.303 (2007) 414 – 418
E-07-40 “Piezoelectric Properties of (K,Na)NbO3 Thin Films Deposited on (001)SrRuO3/Pt/MgO Substrates”
I. Kanno, T. Mino, S. Kuwajima, T. Suzuki, Hi. Kotera, and K. Wasa
IEEE Trans. Ultrason. Ferroelect. Freq. Contr., vol.54 (2007) 2562 – 2566
E-07-41 “Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu”
D. Chakraborti, S. Ramachandran, G. Trichy, J. Narayan, and J.T. Prater
Jour. Appl. Phys., vol.101 (2007) 053918-1 – 053918-7
E-07-42 “MBE growth of Mn-doped Zn–Sn–As compounds on (0 0 1) InP substrates”
J.T. Asubar, A. Kato, T. Kambayashi, S. Nakamura, Y. Jinbo, and N. Uchitomi
Jour. Cryst. Growth, vol.301-302 (2007) 656 – 661
E-07-43 “Investigation of heteroepitaxial growth of magnetite thin films”
G.E. Sterbinsky, J. Cheng, P.T. Chiu, B.W. Wessels, and D.J. Keavney
Jour. Vac. Sci. Technol. B, vol.25 (2007) 1389 – 1392
E-07-44 “Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire”
V. Bhosle, J.T. Prater, and J. Narayan
Jour. Appl. Phys., vol.102 (2007) 013527-1 – 013527-5
E-07-45 “Microwave dielectric properties of strained Ba0.5Sr0.5TiO3 films with and without strain-induced permanent polarization at room temperature”
W. Chang, L.M.B. Alldredge, S.W. Kirchoefer, and J.M. Pond
Jour. Appl. Phys., vol.102 (2007) 014105-1 – 014105-11
E-07-46 “Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation”
C. Merckling, M. El-Kazzi, G. Saint-Girons, G. Hollinger, L. Largeau, G. Patriarche, V. Favre-Nicolin, and O. Marty
Jour. Appl. Phys., vol.102 (2007) 024101-1 – 024101-6 (I-07-27,R-07-10)
E-07-47 “Growth, characterization, and magnetic properties of FePt nanodots on Si (100)”
G. R. Trichy, D. Chakraborti, J. Narayan, and H. Zhou
Jour. Appl. Phys., vol.102, (2007) 033901-1 – 033901-5
E-07-48 “Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy”
J.W. Sun, Y.M. Lu, Y.C. Liu, D.Z. Shen, Z.Z. Zhang, B. Yao, B.H. Li, J.Y. Zhang, D.X. Zhao, and X.W. Fan
Jour. Appl. Phys., vol.102, (2007) 043522-1 – 043522-6

2006年

E-06-01 “Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy”
Y. Takehara, M. Yoshimoto, W. Huang, J. Saraie, K. Oe, A. Chayahara, and Y. Horino
Jpn. Jour. Appl. Phys., vol. 45, (2006) 67-69
E-06-02 “Growth of MgxZn1-xO/ZnO Heterostructures by Liquid Phase Epitaxy”
H. Sato, D. Ehrentraut, and T. Fukuda
Jpn. Jour. Appl. Phys., vol. 45, (2006) 190-193
E-06-03 “Epitaxial relationships of vapor deposited thin films of octithiophene on KBr(001)”
N. Yoshimoto, K. Kawamura, A. Ackermann, C. Videlot-Ackermann, A. El. Kassmi, F. Fages, and Y. Ueda
Mol. Cryst. Liq. Cryst., vol. 445, (2006) 35-41
E-06-04 “Rf-Plasma-assisted molecular beam epitaxy of β-Ga2O3”
E.G. Villora, K. Shimamura, K. Kitamura, and K. Aoki
Appl. Phys. Lett., vol. 88, (2006) 031105-1 . 031105-3
E-06-05 “Magnetic tunnel junctions using B2-ordered Co2MnAl Heusler alloy epitaxial electrode”
Y. Sakuraba, J. Nakata, M. Oogane, Y. Ando, H. kato, A. Sakuma, and T. Miyazaki
Appl. Phys. Lett., vol. 88, (2006) 022503-1 . 022503-3
E-06-06 “Fabrication and thermoelectronic properties of layered cobaltite, γ-Sr0.32Na0.21CoO2 epitaxial films”
K. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto
Appl. Phys. Lett., vol. 88, (2006) 082109-1 . 082109-3
E-06-07 “Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide Semiconductor Ga2O3” (I-06-04)
K. Matsuzaki, H. Yanagi, T. Kamiya, H. Hiramatsu, K. Nomura, M. Hirano and H. Hosono
Appl. Phys. Lett., vol.88, (2006) 092106-1 . 092106-3
E-06-08 “反応性固相エピタキシャル成長法”
太田 裕道・野村 研二・平松 秀典・平野 正浩・細野 秀雄
リガクジャーナル, vol.37, (2006) 3-10 (I-06-05 と同じ)
E-06-09 “Ammonothermal Epitaxy of Thick GaN Film using NH4Cl mineralizer”
Y. Kagamitani, D. Ehrentraut, A. Yoshikawa, N. Hoshino, T, Fukuda, S. Kawabata, and K. Inaba
Jpn. Jour. Appl. Phys., vol.45, (2006) 4018-4020
E-06-10 “TMR Properties for magnetic tunnel junctions with a disordered Co2(Cr1-xFex)Al electrode”
S. Okamura, A. Miyazaki, N. Tezuka, S. Sugimoto, K. Inomata, Y.K. Takahashi, and K. Hono
「不規則構造を有するCo2(Cr1-xFex)Al を用いた強磁性トンネル接合のTMR 特性」Jour. Magn. Soc. Jpn., vol.30, (2006) 366-369 (I-06-07 と同じ) （本文日本語）
E-06-11 “Structural and Magnetic Properties and Tunnel Magnetoresistance of Co2V0.67Fe0.33Al Heustler Alloy Deposited onto an MgO Substrate”
A. Miyazaki, S. Okamura, S. Sugimoto, N. Tezuka, and K. Inomata
「MgO 基板上に作製したCo2V0.67Fe0.33Al 薄膜の構造と磁性およびトンネル磁気抵抗」Jour. Magn. Soc. Jpn., vol.30, (2006) 378-382 (I-06-08 と同じ) （本文日本語）
E-06-12 “Structural dependence of the tunnel magneto resistance for magnetic tunnel junctions with a full-Heusler Co2Fe(Al,Si) electrode”
N. Tezuka, S. Okamura, A. Miyzaki, M. Kikuchi, and K. Inomata
Jour. Appl. Phys., vol.99, (2006) 08T314-1 . 08T-314-3
E-06-13 “Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition”
H. Wang, Y. Huang, Q. Sun, J. Chen, L.L. Wang, J.J. Zhu, D.G. Zhao, S.M. Zhang, D.S. Jiang, Y.T. Wang, and H. Yang
Appl. Phys. Lett., vol.89, (2006) 092114-1 . 092114-3
E-06-14 “Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe : An investigation of the origin of ferromagnetism”
H. Yanagi, S. Ohno, T. Kamiya, H. Hiramatsu, M. Hirano, and H. Hosono
Jour. Appl. Phys., vol.100, (2006) 033717-1 . 033717-5
E-06-15 “Reactive Solid-Phase Epitaxy: A Powerful Method for Epitaxial Film Growth of Complex Layered Oxides” (I-06-14)
H. Ohta
Jour. Ceram. Soc. Jpn., vol.114. (2006) 147-154
E-06-16 “High electrical conductivity of layered cobalt oxide Ca3Co4O9 epitaxial films grown by topotactic ion-exchange method” (I-06-17)
K. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto
Appl. Phys. Lett., vol.89, (2006) 032111-1 . 032111-3
E-06-17 “Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co2FeAl0.5Si0.5 electrodes with B2 and L21 structures”
N. Tezuka, N. Ikeda, A. Miyazaki, S. Sugimoto, M. Kikuchi, and K. Inomata
Appl. Phys. Lett., vol.89, (2006) 112514-1 . 112514-3
E-06-18 “Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures”
D. Kurita, S. Ohta, K. Sugiura, H. Ohta, and K. Koumoto
Jour. Appl. Phys., vol.100, (2006) 096105-1 . 096105-3
E-06-19 “Epitaxial growth and B-site cation ordering in layered double perovskite La2CuSnO6 thin films” (I-06-21)
A. Masuno, M. Haruta, M. Azuma, H. Kurata, S. Isoda, M. Takano, and Y. Shimakawa
Appl. Phys.Lett., vol.89, (2006) 211913-1 . 211913-3
E-06-20 “The influence of external factors on the corrosion resistance of high temperature superconductor thin films against moisture”
M. Murugesan, H. Obara, H. Yamasaki, and S. Kosaka
Jour. Appl. Phys., vol.100, (2006) 113912-1 . 113912-6
E-06-21 “Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure ”
M. Iseki, T. Saka, T. Kato, H. Horinaka, and T. Matsuyama
Jpn. Jour. Appl. Phys., vol.46, (2006) 502-508
E-06-22 “Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer ”
T. Saka, M. Iseki, T. Kato, H. Horinaka, and T. Matsuyama
Jpn. Jour. Appl. Phys., vol.46, (2006) 509-513
E-06-23 “Out-of-Plane/In-Plane 逆格子マップ測定法による薄膜試料の配向ドメイン評価”
小城 あや・紺谷 貴之・稲葉 克彦
リガクジャーナル, vol.37,(2006) 21-27 (I-06-24 と同じ)
E-06-24 “Directionally dependent ferroelectric phase transition order of anisotropic epitaxial BaxSr1-xTiO3 thin films”
J.A. Bellotti, W. Chang, S.B. Qadri, S.W. Kirchoefer, and J.M. Pond
Appl. Phys. Lett., vol.88, (2006) 012902-1 . 012902-3
E-06-25 “Ferromagnetic resonance studies in ZnMnO dilute ferromagnetic semiconductors”
B. Lasley-Hunter, D. Hunter, Maxim Noginov, J. B. Dadson, K. Zhang, R. R. Rakhimov, A. K. Pradhana, Jun Zhang and D. J. Sellmyer
Jour. Appl. Phys., vol.99, (2006) 08M116-1 . 08M116-3
E-06-26 “Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition”
A. Kobayashi, J. Ohta and H. Fujioka
Jour. Appl. Phys., vol.99, (2006) 123513-1 . 123513-4 (R-06-3)
E-06-27 “Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputting”
T. Yohitake, Y. Inokuchi, A. Yuri, and K. Nagayama
Appl. Phys. Lett., vol.88, (2006) 182104-1 . 182104-3
E-06-28 “Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors”
S. Ramachandran, J. Narayan, J.T. Prater
Appl. Phys. Lett., vol.88, (2006) 242503-1 . 242503-3
E-06-29 “Electrical properties of transparent and conducting Ga doped ZnO”
V. Bhosle, A. Tiwari, and J, Narayan
Jour. Appl. Phys., vol.100, (2006) 033713-1 . 033713-6
E-06-30 “Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films”
D.G. Zhao, H. Yang, J.J. Zhu, D.S. Jiang, Z.S. Liu, S.M. Zhang, Y.T. Wang, and J.W. Liang
Appl. Phys. Lett., vol.89, (2006) 112106-1 . 112106-3
E-06-31 “Junction characteristics of SrTiO3 or BaTiO3 on p-Si (100) heterostructures”
D. Hunter, K. Lord, T.M. Williams, K. Zhang, A.K. Pardhan, D.R. Sahu, and J.-L. Huang
Appl. Phys. Lett., vol.89, (2006) 092102-1 . 092102-3
E-06-32 “Strain evolution in GaN layers grown on high-temperature AlN interlayers”
J.F. Wang, D.Z. Yao, J. Chen, J.J. Zhu, D.G. Zhao, D.S. Jiang, H. Yang, and J.L. Liang
Appl. Phys. Lett., vol.89, (2006) 152105-1 . 152105-3
E-06-33 “Ultrathin amorphous Si layer for the growth of strain relaxed Si0.75Ge0.25 alloy layer”
M.M. Rahman, S.Q. Zheng, M. Mori, T. Tambo, and C. Tatsuyama
Jour. Appl. Phys., vol.100, (2006) 053505-1 . 053505-5
E-06-34 “Intrinsic ferromagnetic properties of Ti0.94Fe0.06O2/Ti0.94Mn0.06O2 superlattice films for diluted magnetic semiconductor applications”
N.J. Seong, S.G. Yoon, Y.H. Jo, M.H. Jung, C.R. Cho, J.M. Yang, D.J. park, J.W. Lee, and J.Y. Lee
Appl. Phys. Lett., vol.89, (2006) 162109-1 . 162109-3
E-06-35 “L10 ordered epitaxial FePt (001) thin films on TiN/Si(100) by pulsed laser deposition”
G.R. Trichy, J. Narayan, and H. Zhou
Appl. Phys. Lett., vol.89, (2006) 132502-1 . 132502-3
E-06-36 “Microcrack-free and high Jc thick YBCO films on vicinal r-cut sapphire buffered with CeO2”
J.C. Nie, H. Yamasaki, Y. Nakagawa, K. Develos-Bagarinao, M. Murugesan, H. Obara, and Y. Mawatari
(OpenAccess) Jour. Phys.:Conf. Series, vol.43, (2006) 353 – 356
E-06-37 “Effects of As and Mn doping on microstructure and electrical conduction in ZnO films”
K. Lord, T.M. Williams, D. Hunter, K. Zhang, J. Dadson, and A.K. Pradhan
Appl. Phys. Lett., vol.88, (2006) 262105-1 – 262105-3
E-06-38 “Photoinduced piezo-optical effect in Er doped ZnO films”
T.M. Williams, D. Hunter, A.K. Pradhan and I.V. Kityk
Appl. Phys. Lett., vol.89, (2006) 043116-1 – 043116-3
E-06-39 “Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy”
J.W. Sun, Y.M. Lu, Y.C. Liu, D.Z. Shen, Z.Z. Zhang, B.H. Li, J.Y. Zhang, B. Yao, D.X. Zhao, and X.W. Fan
Appl. Phys. Lett., vol.89, (2006) 232101-1 – 232101-3
E-06-40 “Epitaxial Growth of Ordered Co2(Cr1-xFex)Al Full-Heusler Alloy Films on Single Crystal Substrates”
S. Okamura, A. Miyazaki, N. Tezuka, S. Sugimoto, and K. Inomata
Appl. Phys. Lett., vol.89, (2006) 252508-1 – 252508-3 (I-06-27, R-06-3)
E-06-41 “Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD”
J.P. Liu,, G.D. Shen, J.J. Zhu, S.M. Zhang, D.S. Jiang, and H. Yang
Jour. Cryst. Growth, vol.295, (2006) 7 – 11
E-06-42 “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN”
D.G. Zhao, D.S. Jiang, H. Yang, J.J. Zhu, Z.S. Liu, S.M. Zhang, J.W. Liang, X. Li, X.Y. Li, and H.M. Gong
Appl. Phys. Lett., vol.88, (2006) 241917-1 – 241917-3
E-06-43 “BaTiO3–SrTiO3 multilayer thin film electro-optic waveguide modulator”
J. Hiltunen, D. Seneviratne, R. Sun, M. Stolfi, H.L. Tuller, J. Lappalainen and V. Lantto
Appl. Phys. Lett., vol.89, (2006) 242904-1 – 242904-3
E-06-44 “Fabrication and luminescence properties of single-crystalline, homoepitaxial zinc oxide films doped with tri- and tetravalent cations prepared by liquid phase epitaxy”
D. Ehrentraut, H. Sato, Y. Kagamitani, A. Yoshikawa, T. Fukuda, J. Pejchal, K. Polak, M. Nikl, H. Odaka, K. Hatanaka and H. Fukumura
Jour. Mater. Chem., vol.16, (2006) 3369 – 3374
E-06-45 “Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga2O3”
E.G. Víllora, K. Shimamura, K. Aoki, and K. Kitamura
Appl. Phys. Lett., vol.89, (2006) 252508-1 – 252508-3 (I-06-28)
E-06-46 “Crystallinity Estimation of Strained-Si Wafers by Using Highly Parallel X-Ray Microbeam”
Y. Tsusaka, K. Fukuda, N. Tomita, K. Hayashi, Y. Kagoshima, J. Matsui and A. Ogura
IPAP Conf. Series 7. Proc. 8th Int. Conf. X-ray Microscopy, (2006) 261 – 263

2005年

E-05-01 “Reactive Solid-Phase Epitaxial Growth of NaxCoO2 (x ~0.83) via Lateral Diffusion of Na into a Cobalt Oxide Epitaxial Layer”
H. Ohta, S.W. Kim, S. Ohta, K. Koumoto, M. Hirano, and H. Hosono
Cryst. Growth Design, vol. 5, (2005) 25-28
E-05-02 “Epitaxial Growth of a Copper-phthalocyanine on a Transparent Conductive Substrate with an Atomically Flat Surface” (I-05-01)
T. Kambayashi, H. Ohta, H. Hoshi, M. Hirano, H. Hosono, H. Takezoe, and K. Ishikawa
Cryst. Growth Design, vol. 5, (2005) 143-146
E-05-03 “大気圧ハライド気相成長法によるσ -Bi2O3 薄膜の作製と薄膜構造評価用Ｘ線回折装置による結晶性評価 Atomically”
竹山 知陽・高橋 直行・中村 高遠
リガクジャーナル, vol.36, (2005) 13-17
E-05-04 “Intrinsic crystalline structure of epitaxial Pb(Zr,Ti)O3 thin films”
I. Kanno, H. Kotera, T. Matsunaga, and K. Wasa
Jour. Appl. Phys., vol. 97, (2005) 074101-1 . 074101-5
E-05-05 “Fabrication of Co2MnAl Heusler Alloy Epitaxial Film Using Cr Buffer Layer”
Y. Sakuraba, J. Nakata, M. Oogane, H. Kubota, Y. Ando, A. Sakuma, and T. Miyazaki
Jpn. Jour. Appl. Phys., vol.44, (2005) 6535-6537 (I-05-19)
E-05-06 “Large thermoelectric performance of heavily Nb-doped SrTiO3 epitaxial film at high temperature”
S. Ohta, T. Nomura, H. Ohta, M. Hirano, H. Hosono, and K. Koumoto
Appl. Phys. Lett., vol.87, (2005) 092108-1 . 092108-3
E-05-07 “ｎ型酸化物熱電変換材料の設計指針 –ペロブスカイト型SrTiO3-”
太田 裕道・太田 慎吾・河本 邦仁
Material Integration, vol.18 (2005) No.2 2-6
E-05-08 “高分解能インプレーン回折法によるSGOI 基板の高精度格子歪み測定”
表 和彦・小城 あや
リガクジャーナル, vol.36, (2005) 29-34
E-05-09 “Characterization of SiGe layer on insulator by in-plane diffraction method”
M. Imai, Y. Miyamura, D. Murata, and A. Ogi
Solid Sate Phenomena, vol.108-109, (2005) 451-456
E-05-10 “GaN strain reduction by growth on compliant GaN-rich GaNP”
Y. Tsuda, H. Mouri, T. Yuasa, and M. Taneya
Appl. Phys. Lett., vol.87, (2005) 201916-1 . 201916-3
E-05-11 “High-temperature ferromagnetism in pulsed-laser deposited epitaxial (Zn,Mn)O thin films: Effects of substrate temperature”
A.K. Pradhan, K. Zhang, S. Mohanty, J.B. Dadson, D. Hunter, J. Zhang, D.J. Sellmyer, U.N. Roy, Y. Cui, A. Burger, S. Mathews, B. Joseph, B.R. Sekhar, and B.K. Roul
Appl. Phys. Lett., vol.86, (2005) 152511-1 . 152511-3
E-05-12 “Epitaxial growth and properties of MoOx(2 V. Bhosle, A. Tiwari, and J Narayan
Jour. Appl. Phys., vol.97, (2005) 083539-1 . 083539-6
E-05-13 “Magnetotransoport properties in La1-xCax MnO3 (x=0.33,0.5) thin films deposited on different substrates”
Y.M. Xiong, G.Y. Wang, X.G. Luo, C.H. Wang, X.H. Chen, X. Chen, and C.L. Chen
Jour. Appl. Phys., vol.97, (2005) 083909-1 . 083909-11
E-05-14 “Effect of columnar structures on resistivity behaviour of epitaxial La0.8MnO3 thin films”
C.C. Wang, H. Wang, and J. Zhu
Jour. Appl. Phys., vol.97, (2005) 086104-1 . 084106-3
E-05-15 “Ferromagnetism in nanocrystalline epitaxial Co:TiO2 thin films”
A.K. Pradhan, D. Hunter, J.B. Dadson, T.M. Williams, K. Zhang, K. Lord, B. Lasley, R.R.
Rakhimov, J. Zhan, D.J. Sellmyer, U.N. Roy, Y. Cui, A. Burger, C. Hopkins, N. Pearson, and L. Wilkerson
Appl. Phys. Lett., vol.86, (2005) 222503-1 . 222503-3
E-05-16 “Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells”
J.C. Zhang, D.S. Jiang, Q. Sun, J.F. Wang, Y.T. Wang, J.P. Liu, J. Chen, R.Q. Jin, J.J. Zhu, H. Yang, T. Dai, and Q.J. Jia
Appl. Phys. Lett., vol.87, (2005) 071908-1 . 071908-3
E-05-17 “Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin film”
S. Ramachandran, A. Tiwari, J. Narayan, and J.T. Prater
Appl. Phys. Lett., vol.87, (2005) 172502-1 . 172502-3
E-05-18 “All-epitaxial growth of Ba0.6Sr0.4(Ti0.94Al0.06)O3-Si heterostrutures and their leakage current characteristics”
T.L. Chen, X.M. Li, and W.B. Wu
Jour. Appl. Phys., vol.98, (2005) 064109-1 . 064109-4
E-05-19 “Universal behavior of giant electroresistance in epitaxial La0.67Ca0.33MnO3 thin films”
Y.G. Zhao, Y.H. Wang, G.M. Zhang, B. Zhang, X.P. Zhang, C.X. Yang, P.L. Lang, M.H. Zhu, and P.C. Guan
Appl. Phys. Lett., vol.86, (2005) 122502-1 . 12502-3
E-05-20 “Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures”
T. Suga, S. Kameyama, S. Yoshioka, T. Yamamoto, I. Tanaka, and T. Mizoguchi
Appl. Phys. Lett., vol.86, (2005) 163113-1 . 163113-3
E-05-21 “The combined effect of thermal annealing of MgO substrate and Ca substitution on the surface resistance of YBa2Cu3Oz thin films”
M. Murugesan, H. Obara, and H. Yamasaki
Jour. Appl. Phys., vol.98, (2005) 013908-1 – 013908-10
E-05-22 “Integration of epitaxial colossal magnetoresistive films onto Si(100) using SrTiO3 as a template layer”
A.K. Pradhan, S. Mohanty, K. Zhang, J.B. Dadson, E.M. jackson, D. Hunter, R.R. Rakhimov, G.B. Loutts, J. Zhang, and D.J. Sellmyer
Appl. Phys. Lett., vol.86, (2005) 012503-1 – 012503-3
E-05-23 “Effect of Annealing on Structural and magnetic Properties of a Thick (Ga,Mn)As Layer”
J.J. Deng, J.H. Zhao, C.P. Jiang, Y. Zhang, Z.C. Niu, F.H. Yang, X.G. Wu, and H.Z. Zheng
Chin. Phys. Lett., vol.22 (2005) 466 – 468
E-05-24 “Low-temperature growth of InN by MOCVD and its characterization”
Y. Huang, H. Wang, Q. Sun, J. Chen, D.Y. Li, Y.T. Wang, and H. Yang
Jour. Cryst. Growth, vol.276 (2005) 13-18
E-05-25 “Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer”
Q. Sun, Y. Huang, H. Wang, J. Chen, R.Q. Jin, S.M. Zhang, H. Yang, D.S. Jiang, U. Jahn, and K.H. Ploog
Appl. Phys. Lett., vol.87 (2005) 121914-1 – 121914-3
E-05-26 “Strain-induced anisotropy in microwave dielectric properties of (Ba,Sr)TiO3 thin films with directly applied uniaxial <100> stress”
W. Chang, J.M. Pond, S.W. Kirchoefer, and J.A. Bellotti
Appl. Phys. Lett., vol.87 (2005) 242904-1 – 242904-3
E-05-27 “On the use of one-dimensional position sensitive detector for x-ray diffraction reciprocal space mapping: Data quality and limitations”
O. Masson, A. Boulle, R. Guinebretière, A. Lecomte, and A. Dauger
Rev. Sci. Instrum., vol.76 (2005) 063912-1 – 063912-3

2004年

E-04-01 “新結晶・新物質 金属単結晶上の高品質単結晶膜”
藤本 洋・永田 一夫・村田 好正
固体物理., vol. 39, (2004) 297-311
E-04-2 “Influence of UTA-Si buffer layers on the growth of SiGe films analyzed by high resolution X-ray Reciprocal space map”
S.Q. Zheng, M.M. Rahman, M. Kawashima, M. Mori, T. Tambo, and C. Tatsuyama
e-J. Surf. Sci. Nanotech., vol. 2, (2004) 256-260
E-04-3 “Transparent Organic Thin-Film Transistor with a Laterally Grown Non-Planar Phthalocyanine Channel”
H. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono
Adv. Mater., vol. 16, (2004) 312-316
E-04-4 “固相エピ成長SOS における格子歪みの原因解明 –温度可変GIXS 法による格子定数の温度変化-”
松野 信也・森下 隆・表 和彦
KEK Proceedings 2004-5, (2004) 69-71 （I-04-22 と同じ）
E-04-5 “Structure of epitaxial Ca2Fe2O5 films deposited on different perovskite-type substrates”
M.D. Rossell, O.I. Lebedev, G.V. Tendeloo, N. Hayashi, T. Terashima, and T. Takano
Jour. Appl. Phys., 95, (2004) 5145-5152
E-04-6 “Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy”
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C. Honjyo, Y. Ikuhara and H. Hosono
Jour. Appl. Phys., vol. 95, (2004) 5532-5539
E-04-7 “Magnetic anisotropy of Fe3Pt alloy thin films”
M. A. I. Nahid and T. Suzuki
Appl. Phys. Lett., vol. 85, (2004) 4100-4102
E-04-8 “Analysis of the GaN-rich side of GaNP using x-ray diffraction”
Y. Tsuda, H. Mouri, M. Araki, T. Yuasa, and M. Taneya
Jour. Appl. Phys., vol. 96, (2004) 7136-7140
E-04-9 “High-Quality Epitaxial Film Growth of Transparent Oxide Semiconductors”
H. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara and H. Hosono
Jour. Ceram. Soc. Japan., vol. 112, (2004) S602-S609
E-04-10 “Epitaxial Relationships of Para-sexiphenyl Thin Films on Alkali Halide Substrates”
N. Yoshimoto, T. Sato, Y. Saito, and S. Ogawa
Mol. Cryst. Liq. Cryst., vol. 425, (2004) 279-288
E-04-11 “Growth of crak-free GaN films on Si(111) substrates on Si(111) substrates by using Al-rich AlN buffer layer”
Y. Lu, G. Cong, X. Lie, D.C. Lu, Q. Zhu, Z. Wang, J. Wu, and Z. Wang
Jour. Appl. Phys., vol. 96, (2004) 4982-4988
E-04-12 “Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells”
J.P. Liu, R.Q. Jin, J.J. Zhu, J.C. Zhang, J.F. Wang, M. Wu, J. Chen, Y.T. Wang, and H. Yang
Jour. Cryst. Growth, vol. 264, (2004) 53-57
E-04-13 “The influence of AlN buffer layer thickness on the properties of GaN epilayer”
J.C. Zhang, D.G. Zhao, J.F. Wang, Y.T. Wang, J. Chen, J.P. Liu, and H. Yang
Jour. Cryst. Growth, vol. 268, (2004) 24-29
E-04-14 “A study of the degree of relaxation of AlGaN epilayers on GaN template”
J.C. Zhang, M.F. Wu, J.F. Wang, J.P. Liu, Y.T. Wang, J. Chen, R.Q. Jin, and H. Yang
Jour. Cryst. Growth, vol. 270, (2004) 289-294
E-04-15 “Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer”
B.S. Zhang, M. Wu, J.P. Liu, J. Chen, J.J. Zhu, D.G. Zhao, Y.T. Wang, and H. Yang
Jour. Cryst. Growth, vol. 270, (2004) 316-321
E-04-16 “Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers”
J.P. Liu, R.Q. Jin, J.C. Zhang, J.F. Wang, M. Wu, J.J. Zhu, X.M. Shen, G. Feng, D.G. Zhao, Y.T. Wang, H. Yang, and A.R. Boyd
J. Phys. D: Appl. Phys, vol. 37, (2004) 2060-2063
E-04-17 “Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(1 1 1) substrate”
M. Wu, B.S. Zhang, J. Chen, J.P. Liu, X.M. Shen, D.G. Zhao, J.C. Zhang, J.F. Wang, N. Li, R.Q. Jin, J.J. Zhu, and H. Yang
Jour. Cryst. Growth, vol. 270, (2004) 331-335
E-04-18 “Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows”
J.P. Liua, B.S. Zhang, M. Wu, D.B. Li, J.C. Zhang, R.Q. Jin, J.J. Zhu, J. Chen, J.F. Wang, Y.T. Wang, and H. Yang
Jour. Cryst. Growth, vol. 260, (2004) 388-393

2003年

E-03-1 “Single-Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid-Phase Epitaxy”
H. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, and H. Hosono
Adv. Funct. Mater., vol. 13, (2003) 139-144
E-03-2 “Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition”
N. Takahashi, Y. Nakatani, T. Yatomi, and T. Nakamura
Chem, Mater., vol. 15, (2003) 1763-1765
E-03-3 “(001)-oriented FePt-Ag composite nanogranular films on amorphous substrate”
K. Kang, Z.G. Zhang, C. Papusoi, and T. Suzuki
Appl. Phys. Lett., vol. 82 (2003) 3284-3286
E-03-4 “Pt（001）/MgO(001)基板上に成膜されたPZT 薄膜の結晶構造”
松永 利之・神前 隆・高山 良一・神野 伊策；
「理学電機ジャーナル」、 vol. 33/34（2003）pp. 4-16
E-03-5 “Fabrication and photoresponse of pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO, and n-ZnO”
H. Ohta, M. Hirano, K. Nakahara, H. Murata, T. Tanabe, M. Kamiya, T. Kamiya, and H. Hosono
Appl. Phys. Lett., vol. 83, (2003) 1029-1031
E-03-6 “Application of a Transparent Conductive Substrate with an Atomically Flat and Stepped Surface to Lateral Growth of an Organic Molecule: Vanadyl Phthalocyanine”
H. Ohta, T. Kambayashi, M. Hirano, H. Hoshi, K. Ishikawa, H. Takezoe, and H. Hosono
Adv Mater., vol. 15, (2003) 1258-1262
E-03-7 “高分解能Ｘ線構造解析装置ATX-G 使用レポート”
田渕 雅夫・森 敬洋・槇 英信・林 寛也・神野 真吾・茜 俊光・大賀 涼・藤原 康文・竹田 美和
「Ｘ線回折研究の歩み」名古屋大超強力Ｘ線室, vol. 24（2003）pp. 21-24
E-03-8 “エピタキシャル磁性人工格子の結晶構造解析と磁気異方性”
加藤 剛志
「Ｘ線回折研究の歩み」名古屋大超強力Ｘ線室, vol. 24（2003）pp. 27-31
E-03-9 “Brillouin scattering study of ZnO”
T. Azuhata, M. Takesada, T. Yagi, A. Shikanai, S.F. Chichibu, K. Torii, A. Nakamura, T. Sota, G.Cantwell, D.B. Eason, and C.W. Litton
Jour. Appl. Phys., vol.94, (2003) 968-972
E-03-10 “Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4 / n-ZnO”
H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, and H. Hosono
Appl. Phys Lett.., vol.82, (2003) 823-825
E-03-11 “Free-standing non-polar gallium nitride substrates”
H.P. Maruska, D.W. Hill, M.C. Chou, J.J. Gallagher, and B.H. Chai
Opto-Electron. Rev., vol.11, (2003) 7-17
E-03-12 “TlBa2Ca2Cu3Oy superconducting films on MgO with different morphologies”
P. Badica, A. Sundaresan, A. Crisan, J.C. Nie, M. Hirai, S. Fujiwara, H. Kito, and H. Ihara
Physica C, vol.383, (2003) 482-490
E-03-13 “Electron transport in InGaO3(ZnO)m (m=integer) studied using singlecrystalline thin films and transparent MISFETs”
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono
Thin Solid Films, vol.445, (2003) 332-326
E-03-14 “Growth temperature dependence of structural properties for AlN films grown on (Mn,Zn)Fe2O4 substrates”
J. Ohta, H. Fujioka, S. Ito, and M. Oshima
Thin Solid Films, vol.435, (2003) 218-221
E-03-15 “Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1)”
B.S. Zhang, M. Wu, X.M. Shen, J. Chen, J.J. Zhu, J.P. Liu, G. Feng, D.G. Zhao, Y.T. Wang, and H. Yang
Jour. Cryst. Growth, vol.258, (2003) 34-40
E-03-16 “Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation”
Z.H. Feng, H. Yang, X.H. Zheng, Y. Fu, Y.P. Sun, X.M. Shen, and Y.T. Wang
Appl. Phys. Lett., vol.82, (2003) 206-208
E-03-17 “Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemiacal Vapour Deposition”
M. Lu, H. Yang, Z.L. Li, Z.J. Yang, Z.H. Li, Q. Ren, C.L. Jin, S. Lu, B. Zhang, and G.Y. Zhang
Chin Phys. Lett., vol.20, (2003) 1552-1553
E-03-18 “Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe”
H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono
Thin Solid Films, vol.445, (2003) 304-308 (I-03-19)
E-03-19 “UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO”
H. Ohta, M. Kamiya, T. Kamiya, M. Hirano, and H. Hosono
Thin Solid Films, vol.445, (2003) 317-321 (I-03-20)

2002年

E-02-1 “Carrier doping into MgIn2O4 epitaxial thin films by proton implantation”
M. Miyakawa, R. Noshiro, T. Ogawa, K. Ueda, H. Kawazoe, H. Ohta, M. Orita, M. Hirano, and H. Hosono
Jour. Appl. Phys., vol. 91, (2002) 2112-2117
E-02-2 “Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia”
H. Ohta, M. Orita, M. Hirano, and H. Hosono
Jour. Appl. Phys., vol. 91, (2002) 3547-3550
E-02-3 “Growth of single-crystal SiO2 film on Ni(111) surface”
M. Kundu and Y. Murata
Appl. Phys. Lett., vol. 80, (2002) 1921-1923
E-02-4 “Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS”
H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono
Appl. Phys. Lett., vol. 81, (2002) 598-600
E-02-5 “Analysis of growth mechanism for MnSb epitaxial films fabricated on Si substrate by DC sputtering”
Y. Ashizawa, S. Saito and M. Takahashi
Jour. Appl. Phys, vol. 91, (2002) 8096-8098
E-02-6 “Heteroepitaxial growth of single-phase zinc blende ZnS films on transparent substrates by pulsed laser deposition under H2S atmosphere”
H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono
Solid State Commun., vol. 124, (2002) 411-415
E-02-7 “In-Plane Structure Analysis of BEDT-TTF Thin Films by X-Ray Diffraction”
N. Yoshimoto, T. Sato, K. Ogawa, K. Omote, Y. Saito, and M. Yoshizawa
Mol. Cryst. Liq. Cryst., vol. 377, (2002) 381-384
E-02-8 “Room-temperature epitaxial growth of AlN films”
J. Ohta, H. Fujioka, S. Ito, and M. Oshima
Appl. Phys. Lett., vol. 81 (2002) 2373-2375
E-02-9 “Temperature dependence of perpendicular magnetic anisotropy for c-plane-oriented MnSb sputtered films ”
Y. Ashizawa, S. Saito, and M. Takahashi
Jour. Appl. Phys., vol. 91 (2002) 8240-8242
E-02-10 “Strain in the HWE-grown ZnTe/(1 0 0) GaAs hetero-interface”
B.J. Kim, J.F. Wang, Y. Ishikawa, Y.-G. Park, D. Sindo, S. Abe, K. Masumoto, and M. Isshiki
Jour. Cryst. Growth, vol. 235 (2002) 201-206
E-02-11 “Growth and characterization of Pb1-x(Mg1-ySry)xS thin films prepared by hot-wall epitaxy”
S. Abe and K. Masumoto
Jour. Cryst. Growth, vol. 246 (2002) 121-126
E-02-12 “Characterization of GaAs on MnZn ferrite with a MnAs buffer layer”
S. Ito, H. Fujioka, H. Kiwata, T. Ikeda, M. Oshima
Jour. Cryst. Growth, vol.237-239, (2002) 1466-1470 (I-02-22)
E-02-13 “Novel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound”
K. Nomura, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono
Thin Solid Films, vol.411, (2002) 147-151 (I-02-23)
E-02-14 “Structural investigation of Pby(Zr0.57Ti0.43)2-yO3 films deposited on Pt(001)/MgO(001) substrates by rf sputtering”
T. Matsunaga, T. Hosokawa, Y. Umetani, R. Takayama, and I. Kanno
Phys. Review, B, vol.66, (2002) 064102-1 – 0641012-8 (I-02-24)

2001年

E-01-1 “Fabrication and characterization of Ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO”
H. Ohta, M. Orita, M. Hirano, and H. Hosono
Jour. Appl. Phys., vol.89, (2001) 5720-5725
E-01-2 “Structural characteristics and magnetic properties of λ-MnO2 films grown by plasma-assisted molecular beam epitaxy”
L.W.Guo, D.L. Peng, H. Makino, T. Hanada, S.K. Hong, K. Sumiyama, T. Yao, and K. Inaba
Jour. Appl. Phys., vol.90, (2001) 351-354
E-01-3 “p-SrCu2O22/n-ZnO ヘテロ接合LED の作製と近紫外発光”
太田 裕道・折田 政寛・平野 正浩・細野 秀雄
「表面科学」 vol.22（2001）pp.419-424
E-01-4 “Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer”
Y.F. Chen, H.J. Ko, S.K. Hong, K. Inaba, Y. Segawa, and T. Yao
Jour. Cryst. Growth, vol. 227-228, (2001) 917-922
E-01-5 “Investigation of Molecular Beam Epitaxial NdF3/Si(111) Heterostructures by Atomic Force Microscopy and X-ray Diffractometry”
J.M. Ko, S.D. Durbin, T. Fukuda, and K. Inaba
J. Vac. Sci. Technol. B 19, (2001) 2007-2012
E-01-6 “Crystal Growth of GaN on (Mn,Zn)Fe2O4 Substrates”
J. Ohta, H. Fujioka, H. Takahashi, and M. Oshima
Phys. Stat. Sol., (a) vol.188, (2001) 497-500
E-01-7 “スパッタリング法により作製したｃ面配向MnSb 薄膜の平坦化”
斉藤 伸・芦沢 好人・荘司 弘樹・高橋 研
日本応用磁気学会誌 25 巻（2001）855-858 (same article with I-01-6)
E-01-8 “RHEED and XPS study of GaN on Si(1 1 1) grown by pulsed laser deposition”
J. Ohta, H. Fujioka, H. Takahashi, M. Sumiya and M. Oshima
Jour. Cryst. Growth, vol.233, (2001) 779-784
E-01-9 “Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy”
L.H. Li , Z. Pan, W. Zhang, Y.W. Lin, X.Y. Wang, R.H. Wu, and W.K. Ge
Jour. Cryst. Growth, vol.223, (2001) 140-144
E-01-10 “Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy”
L.H. Li , Z. Pan, W. Zhang, Y.W. Lin, X.Y. Wang, and R.H. Wu
Jour. Cryst. Growth, vol.227-228, (2001) 527-531
E-01-11 “Structural characteristic and magnetic properties of Mn oxide films grown by plasma-assisted MBE”
L.W. Guo, H. Makino, H.J. Ko, Y.F. Chen, T. Hanada, D.L. Peng, K. Inaba, and T. Yao
Jour. Cryst. Growth, vol.227-228, (2001) 955-959

2000年

E-00-1 “Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition”
H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, and H. Hosono
Appl. Phys. Lett., vol., 76, (2000) 2740-2742
E-00-2 “Epitaxial growth of MnAs on single-crystalline Mn-Zn ferrite substrates”
T. Ikeda, H. Fujioka, S. Hayakawa, K. Ono, M. Oshima, M. Yoshimoto, H. Maruta, H. Koinuma, K. Inaba, and R. Matsuo
Jour. Cryst. Growth, vol.208, (2000) 395-400
E-00-3 “ZnO films grown under the oxygen-rich condition”
T. Sekiguchi, K. Haga, and K. Inaba
Jour. Cryst. Growth, vol.214/215, (2000) 68-71
E-00-4 “Surface characterization of NdF3 layers on Si(111) substrates grown by molecular beam epitaxy”
J.M. Ko, K. Inaba, S.D. Durbin, and T. Fukuda
Jour. Cryst. Growth, vol.212, (2000) 155-160
E-00-5 “Nonisomorphic ErF3 layers on Si(111) substrates grown by molecular beam epitaxy”
J.M. Ko, S.D. Durbin, T. Fukuda, and K. Inaba
Jour. Vac. Sci. Technol., vol.18, (2000) 922-926
E-00-6 “Structural and magnetic properties of Mn3O4 films grown on MgO(001) substrates by plasma-assisted MBE”
L.W. Guo, D.L. Peng, H. Makino, K. Inaba, H.J. Ko, K. Sumiyama, and T. Yao
Jour. Magn. Magn. Mater., vol.213, (2000) 321-325
E-00-7 “Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition”
D.P. Xu, Y.T. Wang, H. Yang, S.F. Li, D.G. Zhao, Y. Fu, S.M. Zhang, and R.H. Wu
Jour. Appl. Phys., vol.88, (2000) 3762-3764
E-00-8 “Blue Light Emitting Device made of cubic phase gallium nitride”
H. Yang, S.M. Zhang, L.X. Zheng, D.P. Xu, D.G. Zhao, and S.F. Li
Proc of First Joint Symp on Opto-, Microelectro.Devices and Circuits, (2000) 90-93
E-00-9 “X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures”
Z. Pan, Y.T. Wang, L.H. Li, W. Zhang, Y.W. Lin, Z.Q. Zhou, and R.H. Wu
Jour. Cryst. Growth, vol.217, (2000) 26-32
E-00-10 “Damage removal and defect control in As ion implanted Si1-x Gex epilayers during a high-temperature annealing process”
L.-F. Zou, S.E. Acosta-Ortiz, L.E. Regalado, and L.X. Zou
Microelectronic Engineering, vol.51-52, (2000) 575-581
E-00-11 “MBE-growth of novel MnF2 –CaF2 superlattices on Si(111) and their characterization”
N.S. Sokolov, Y. Takeda, A.G. Banshchikov, J. Harada, K. Inaba, H. Ofuchi, M. Tabuchi, and N.L. Yakovlev
Appl. Surf. Sci., vol.162-163, (2000) 469-473

1999年

E-99-1 “Heteroepitaxial growth of Zinc oxide single crystal thin films on (111) plane YSZ by Pulsed Laser Deposition”
H. Ohta, H. Tanji, M. Orita, H. Hosono, and H. Kawazoe
Proc.Mat. Res. Soc. Symp., vol., 570, (1999) 309-313
E-99-2 “Structural and vibrational properties of GaN”
T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, and S. Nakamura
Jour. Appl. Phys., vol. 86, (1999) 1860-1866
E-99-3 “Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure”
T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura
Jpn. Jour. Appl. Phys., vol.38, (1999) L914-L916
E-99-4 “Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates”
T. Ikeda, H. Fujioka, S. Hayakawa, K. Ono, M. Oshima, M. Yoshimoto, H. Maruta, H. Koinuma, K. Inaba, and R. Matsuo
Jpn. Jour. Appl. Phys., vol.38, (1999) L854-L856
E-99-5 “Epitaxial growth of Mn3O4 film on MgO(001) substrate by plasma-assisted molecular beam epitaxy (MBE)”
L.W. Guo, H.J. Ko, H. Makino, Y.F. Chen, K. Inaba, and T. Yao
Jour. Cryst. Growth, vol.205, (1999) 531-536
E-99-6 “X-ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrown Technique”
K. Kobayashi, A. A. Yamaguchi, S. Kimura, H. Sunakawa, A. Kimura, and A. Usui
Jpn. Jour. Appl. Phys., vol.38, (1999) L611-L613
E-99-7 “Optical Properties of an InGaN active Layer in Ultra violet Light Emitting Diode”
T. Deguchi, K. Torii, K. Shimada, T. Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S.F. Chichibu, and S. Nakamura
Jpn. Jour. Appl. Phys., vol.38, (1999) L975-977

1998年

E-98-1 “Epitaxial Growth of BEDT-TTF Thin Films on KCl and Mica”
N. Yoshimoto, H. Maehara, Y. Ueda, J.P. Ni, K. Omote, and M. Yoshizawa
Mol. Cryst. Liq. Cryst., vol.316, (1998) 129-132
E-98-2 “Precise Measurement of Strain Induced bySilicon-on-Insulator Structures”
S. Kimura and M. A. Ogura
Jpn. Jour. Appl. Phys., vol.37, (1998) 1282-1284